Specific Process Knowledge/Etch/ICP Metal Etcher/silicon/nano/Sinano4

The Sinano4.0 recipe

Recipe Sinano4.0

Recipe	Gas	Cl2 20 sccm
	Pressure	2 mTorr, Strike 3 secs @ 5 mTorr
	Power	900 W CP, 60 W PP
	Temperature	20 degs
	Hardware	100 mm Spacers
	Time	90 secs
Conditions	Run ID	435, ID
	Conditioning	Sequence: Oxygen clean, MU tests, processes, no oxygen between runs
	Mask	110 nm zep etched down to 43 nm

• The results of the Sinano4.0 recipe
• 
  The 30 nm trenches
• 
  The 60 nm trenches
• 
  The 90 nm trenches
• 
  The 120 nm trenches
• 
  The 150 nm trenches
• File:Cl2 20 sccm, 2 mTorr, Strike 3 secs @ 5 mTorr, 900 W CP, 60 W PP, 20 degs, 90 secs

Nominal trench line width	'	'	30	60	90	120	150	Average	Std. dev.
Etch rate	nm/min		154	169	170	172	177	169	9
Sidewall angle	degs		85	83	84	84	84	84	1
CD loss	nm/edge		28	52	68	87	101	67	29
CD loss foot	nm/edge		28	52	68	87	101	67	29
Bowing			24	28	24	20	16	22	5
Bottom curvature			-21	18	20	15	11	9	17
Zep etch rate								45