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<!--Page reviewed by jmli 1/8-2016  -->
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==Etching of Aluminium==
==Etching of Aluminium==


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<br clear="all" />
<br clear="all" />


==Comparison methode 1 and methode 2 for the process==
==Comparison of Aluminium Etch Methods==


{|border="1" cellspacing="1" cellpadding="3" style="text-align:left;"  
{|border="1" cellspacing="1" cellpadding="3" style="text-align:left;"  
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|-style="background:silver; color:black"
|-style="background:silver; color:black"
!
!
![[Specific Process Knowledge/Etch/Wet Aluminium Etch|Al wet etch 1]]
![[Specific Process Knowledge/Etch/Wet Aluminium Etch|Aluminium Etch]]
![[Specific Process Knowledge/Etch/Wet Aluminium Etch|Al wet etch 2]]
![[Specific_Process_Knowledge/Lithography/Development#Developer:_TMAH_Manual|Developer TMAH manual]]
![[Specific_Process_Knowledge/Etch/ICP_Metal_Etcher|Al etch by ICP metal]]
![[Specific_Process_Knowledge/Etch/ICP_Metal_Etcher|ICP metal]]
![[Specific_Process_Knowledge/Etch/IBE&frasl;IBSD Ionfab 300|Al sputtering by IBE (Ionfab300+)]]
![[Specific_Process_Knowledge/Etch/IBE&frasl;IBSD Ionfab 300|IBE (Ionfab300+)]]
|-
|-


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|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
!Generel description
!Generel description
|Wet etch of pure Al
|Wet etch of Al
|Wet etch of Al + 1.5% Si
|Wet etch/removal: TMAH<br>
Mainly used for removing Al on e-beam resist after e-beam exposure, see process flow [[Specific_Process_Knowledge/Lithography/EBeamLithography#Aluminum_coating| here]]
|Dry plasma etch of Al
|Dry plasma etch of Al
|Sputtering of Al - pure physical etch
|Sputtering of Al - pure physical etch.
|-
|-


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!Etch rate range
!Etch rate range
|
|
*~100nm/min (pure Al)
*~60-100nm/min
|
|
*~60nm/min (Al+1.5% Si)
*~30nm/min (pure Al)
|
|
*~350 nm/min (depending on features size and etch load)  
*~350 nm/min (depending on features size and etch load)  
|  
|  
*
*~30nm/min (not tested yet)
|-
|-


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!Substrate size
!Substrate size
|
|
*<nowiki>#</nowiki> small samples
*100 mm wafers (in bath)
*<nowiki>#</nowiki> 50 mm wafers
*150 mm wafers (in bath)
*<nowiki>#</nowiki> 100 mm wafers
*Any size (in beaker)
*<nowiki>#</nowiki> 150 mm wafers
|
|
*<nowiki>#</nowiki> small samples
*Chips (6-60 mm)
*<nowiki>#</nowiki> 50 mm wafers
*100 mm wafers
*<nowiki>#</nowiki> 100 mm wafers
*150 mm wafers
*<nowiki>#</nowiki> 150 mm wafers
|
*smaller pieces on a carrier wafer
*<nowiki>#</nowiki>1 100mm wafers (when set up to 100mm wafers)
*<nowiki>#</nowiki>1 150mm wafers (when set up to 150mm wafers)
|
Smaller pieces glued to carrier wafer
*<nowiki>#</nowiki>1 50mm wafer
*<nowiki>#</nowiki>1 100mm wafer
*<nowiki>#</nowiki>1 150mm wafer
*<nowiki>#</nowiki>1 200mm wafer
|-
|-


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|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
!'''Allowed materials'''
!'''Allowed materials'''
|In 'Aluminium Etch' bath:
*See Cross Contamination Sheet for [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=381 Aluminium Etch] bath (require login)
In beaker:
*Any material
|
*Every thing that is allowed in the Developer: TMAH Manual
|
|
*Allowed material 1
*Silicon
*Allowed material 2
*Quartz/fused silica
*Photoresist/e-beam resist
*PolySilicon,
*Silicon oxide
*Silicon (oxy)nitride
*Aluminium
*Titanium
*Chromium
|
|
*Allowed material 1
*Silicon
*Allowed material 2
*Silicon oxides
*Allowed material 3
*Silicon nitrides
*Metals from the +list
*Metals from the -list
*Alloys from the above list
*Stainless steel
*Glass
*III-V materials
*Resists
*Polymers
*Capton tape
|-
|-
|}
|}
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