Jump to content

Specific Process Knowledge/Etch/Etching of Aluminium: Difference between revisions

← Older edit
VisualWikitext
BGE (talk | contribs)
Bureaucrats, danchip, Administrators
2,908 edits
Mbec (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers
191 edits
No edit summary
 
(40 intermediate revisions by 9 users not shown)
Line 1: Line 1:
'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Etch/Etching_of_Aluminium click here]'''
'''Unless anything else is stated, everything on this page, text and pictures are made by DTU Nanolab.'''


=<span style="background:#FF2800">THIS PAGE IS UNDER CONSTRUCTION</span>[[image:Under_construction.png|200px]]=
'''All links to Kemibrug (SDS) and Labmanager Including APV and QC requires login.'''


'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Etch/Etching_of_Aluminium click here]'''
<!--Page reviewed by jmli 1/8-2016  -->
<!-- Ok, jmli 2020-0120 -->
==Etching of Aluminium==
==Etching of Aluminium==


Etching of aluminium can be done either by wet etch, dry etch or by sputtering with ions.
Etching of aluminium can be done either by wet etch, dry etch or by sputtering with ions.
*[[/Deposition of silicon nitride using LPCVD|Etching of Al by wet etch: 1]]
*[[Specific Process Knowledge/Etch/Wet Aluminium Etch|Etching of Al by wet etch]]
*[[/Deposition of silicon nitride using LPCVD|Etching of Al by wet etch: 2]]
*[[Specific_Process_Knowledge/Etch/ICP_Metal_Etcher/Aluminium|Etching of Al by dry etch]]
*[[/Deposition of silicon nitride using LPCVD|Etching of Al by dry etch]]
*[[Specific_Process_Knowledge/Etch/IBE&frasl;IBSD Ionfab 300|Sputtering of Al]]
*[[/Deposition of silicon nitride using LPCVD|Etching of Al by sputering]]
<br clear="all" />
<br clear="all" />


==Comparison methode 1 and methode 2 for the process==
==Comparison of Aluminium Etch Methods==


{|border="1" cellspacing="1" cellpadding="3" style="text-align:left;"  
{|border="1" cellspacing="1" cellpadding="3" style="text-align:left;"  
Line 20: Line 22:
|-style="background:silver; color:black"
|-style="background:silver; color:black"
!
!
![[Specific Process Knowledge/Thin film deposition/Furnace LPCVD Nitride|Methode 1]]
![[Specific Process Knowledge/Etch/Wet Aluminium Etch|Aluminium Etch]]
![[Specific Process Knowledge/Thin film deposition/PECVD|Methode 2]]
![[Specific_Process_Knowledge/Lithography/Development#Developer:_TMAH_Manual|Developer TMAH manual]]
![[Specific_Process_Knowledge/Etch/ICP_Metal_Etcher|ICP metal]]
![[Specific_Process_Knowledge/Etch/IBE&frasl;IBSD Ionfab 300|IBE (Ionfab300+)]]
|-
|-


Line 27: Line 31:
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
!Generel description
!Generel description
|Generel description - methode 1
|Wet etch of Al
|Generel description - methode 2
|Wet etch/removal: TMAH<br>
Mainly used for removing Al on e-beam resist after e-beam exposure, see process flow [[Specific_Process_Knowledge/Lithography/EBeamLithography#Aluminum_coating| here]]
|Dry plasma etch of Al
|Sputtering of Al - pure physical etch.
|-
|-


|-
|-
|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
!Parameter 1
!Etch rate range
|
|
*A
*~60-100nm/min
*B
|
|
*A
*~30nm/min (pure Al)
*B
|
*~350 nm/min (depending on features size and etch load)
|
*~30nm/min (not tested yet)
|-
|-


|-
|-
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
!Parameter 2
!Etch profile
|
*Isotropic
|
*Isotropic
|
|
*A
*Anisotropic (vertical sidewalls)
*B
*C
|
|
*A
*Anisotropic (angles sidewalls, typical around 70 dg)
|-
|-


Line 58: Line 69:
!Substrate size
!Substrate size
|
|
*<nowiki>#</nowiki> small samples
*100 mm wafers (in bath)
*<nowiki>#</nowiki> 50 mm wafers
*150 mm wafers (in bath)
*<nowiki>#</nowiki> 100 mm wafers
*Any size (in beaker)
*<nowiki>#</nowiki> 150 mm wafers  
|
*Chips (6-60 mm)
*100 mm wafers  
*150 mm wafers
|
|
*<nowiki>#</nowiki> small samples
*smaller pieces on a carrier wafer
*<nowiki>#</nowiki> 50 mm wafers
*<nowiki>#</nowiki>1 100mm wafers (when set up to 100mm wafers)
*<nowiki>#</nowiki> 100 mm wafers
*<nowiki>#</nowiki>1 150mm wafers (when set up to 150mm wafers)
*<nowiki>#</nowiki> 150 mm wafers
|
Smaller pieces glued to carrier wafer
*<nowiki>#</nowiki>1 50mm wafer
*<nowiki>#</nowiki>1 100mm wafer
*<nowiki>#</nowiki>1 150mm wafer
*<nowiki>#</nowiki>1 200mm wafer
|-
|-


Line 72: Line 91:
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
!'''Allowed materials'''
!'''Allowed materials'''
|In 'Aluminium Etch' bath:
*See Cross Contamination Sheet for [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=381 Aluminium Etch] bath (require login)
In beaker:
*Any material
|
*Every thing that is allowed in the Developer: TMAH Manual
|
|
*Allowed material 1
*Silicon
*Allowed material 2
*Quartz/fused silica
*Photoresist/e-beam resist
*PolySilicon,
*Silicon oxide
*Silicon (oxy)nitride
*Aluminium
*Titanium
*Chromium
|
|
*Allowed material 1
*Silicon
*Allowed material 2
*Silicon oxides
*Allowed material 3
*Silicon nitrides
*Metals from the +list
*Metals from the -list
*Alloys from the above list
*Stainless steel
*Glass
*III-V materials
*Resists
*Polymers
*Capton tape
|-
|-
|}
|}
Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Etch/Etching_of_Aluminium"