Specific Process Knowledge/Etch/Etching of Aluminium: Difference between revisions
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==Etching of Aluminium== | ==Etching of Aluminium== | ||
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|-style="background:WhiteSmoke; color:black" | |-style="background:WhiteSmoke; color:black" | ||
!Generel description | !Generel description | ||
|Wet etch of | |Wet etch of Al | ||
|Wet etch/removal: TMAH<br> | |Wet etch/removal: TMAH<br> | ||
Mainly used for removing Al on e-beam resist after e-beam exposure, see process flow [[Specific_Process_Knowledge/Lithography/EBeamLithography#Aluminum_coating| here]] | Mainly used for removing Al on e-beam resist after e-beam exposure, see process flow [[Specific_Process_Knowledge/Lithography/EBeamLithography#Aluminum_coating| here]] | ||
|Dry plasma etch of Al | |Dry plasma etch of Al | ||
|Sputtering of Al - pure physical etch | |Sputtering of Al - pure physical etch. | ||
|- | |- | ||
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!Etch rate range | !Etch rate range | ||
| | | | ||
*~100nm/min | *~60-100nm/min | ||
| | | | ||
*~ | *~30nm/min (pure Al) | ||
| | | | ||
*~350 nm/min (depending on features size and etch load) | *~350 nm/min (depending on features size and etch load) | ||
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!Substrate size | !Substrate size | ||
| | | | ||
* | *100 mm wafers (in bath) | ||
* | *150 mm wafers (in bath) | ||
*Any size (in beaker) | |||
| | | | ||
*Chips (6-60 mm) | *Chips (6-60 mm) | ||
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|-style="background:WhiteSmoke; color:black" | |-style="background:WhiteSmoke; color:black" | ||
!'''Allowed materials''' | !'''Allowed materials''' | ||
| | |In 'Aluminium Etch' bath: | ||
*Aluminium | *See Cross Contamination Sheet for [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=381 Aluminium Etch] bath (require login) | ||
In beaker: | |||
*Any material | |||
* | |||
| | | | ||
*Every thing that is allowed in the Developer: TMAH Manual | *Every thing that is allowed in the Developer: TMAH Manual | ||