Specific Process Knowledge/Etch/Aluminum Oxide/Al2O3 Etch with ICP Metal: Difference between revisions

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==Al2O3 etching by sanvis@nanolab [[Image:Section_under_construction.jpg|70px]]==
==Al2O3 etching by Sanjeev Vishal Kota sanvis@nanolab==
[[Media:Alumina etch information.pptx|Persentation made by Sanvis @DTU Nanolab]]
*[[Media:Alumina etch information.pptx|Presentation made by Sanvis @DTU Nanolab, click to view]]


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===Results===
===Results===
<gallery caption="Profile view" widths="400px" heights="325px" perrow="3">
<gallery caption="Profile view, etch time 40 min, started with 380 nm zep resist" widths="400px" heights="325px" perrow="3">


Image:S038116_01.jpg
Image:S038116_01.jpg

Latest revision as of 12:48, 14 May 2024

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Al2O3 etching with the ICP metal

Parameter Recipe name: Al2O3 Etch
Coil Power [W] 1200
Platen Power [W] 200
Platen temperature [oC] 0
BCl3 flow [sccm] 60
Cl2 flow [sccm] 30
Pressure [mTorr] 4


Material to be etched Etch rate using the above parameters
Al2O3
  • ~93nm/min (30s, 1/4 wafer on 6" carrier)
    2017-01-20 bghe@nanolab


Al2O3 etching by Sanjeev Vishal Kota sanvis@nanolab

Parameter Nanoscale Al2O3 etch Microscale Al2O3 etch
Coil Power [W] 300 500
Platen Power [W] 15 70
Platen temperature [oC] 0 0
BCl3 flow [sccm] 20 40
Cl2 flow [sccm] 7 15
Pressure [mTorr] 1.2 3.0


Material to be etched Nanoscale Al2O3 etch Microscale Al2O3 etch
Etch rate 6.25 nm/min on 6" wafer, Summer sanvis@nanolab 25 nm/min on small samples on Si carrier, Summer 2022 sanvis@nanolab


Al2O3 etching by bghe@nanolab

Recipes

Al2O3 etch
Parameter Recipe 1:Al2O3 etch platen only
BCl3 (sccm) 15
Ar (sccm) 15
Pressure (mTorr) 5
Coil power (W) 0
Platen power (W) 30
Temperature (oC) 20
Spacers (mm) 100 mm

Results

  • Profile view, etch time 40 min, started with 380 nm zep resist
  • Top view after resist strip
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