Specific Process Knowledge/Etch/Aluminum Oxide/Al2O3 Etch with ICP Metal: Difference between revisions

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'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Etch/Aluminum_Oxide/Al2O3_Etch_with_ICP_Metal click here]'''
'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Etch/Aluminum_Oxide/Al2O3_Etch_with_ICP_Metal click here]'''




=<span style="background:#FF2800">THIS PAGE IS UNDER CONSTRUCTION</span>[[image:Under_construction.png|200px]]=
==Al2O3 etching with the ICP metal==


{| border="1" cellspacing="2" cellpadding="2"  
{| border="1" cellspacing="2" cellpadding="2"  
|-style="background:Black; color:White"
|-style="background:Black; color:White"
! Parameter
! Parameter
|Recipe name: '''SiO2_res''' ('''SiO2''' etch with '''res'''ist mask)  
|Recipe name: '''Al2O3 Etch'''   
|-
|-
|Coil Power [W]
|Coil Power [W]
|1300
|1200
|-
|-
|Platen Power [W]
|Platen Power [W]
Line 18: Line 18:
|0
|0
|-
|-
|He flow [sccm]
|BCl3 flow [sccm]
|174
|60
|-
|-
|C<sub>4</sub>F<sub>8</sub> flow [sccm]
|Cl<sub>2</sub> flow [sccm]
|5
|30
|-
|H<sub>2</sub> flow [sccm]
|4
|-
|-
|Pressure [mTorr]
|Pressure [mTorr]
|4
|4
Line 32: Line 32:
|}
|}


===Etch rates in different materials using the standard "Silicon oxide etch with resist mask" ===


{| border="2" cellspacing="2" cellpadding="3"
{| border="2" cellspacing="2" cellpadding="3"
|-style="background:DarkGray; color:White"
|-style="background:DarkGray; color:White"
!Material to be etched
!Material to be etched
!Etch rate using SiO2_res
!Etch rate using the above parameters
|-
|-
|Thermal oxide
|Al2O3
|
|
*'''~230nm/min (5% etch load)''' - etch load dependency [[/AOE SiO2 etch load dependency|'''see here''']]
*'''~93nm/min (30s, 1/4 wafer on 6" carrier)'''<br> ''2017-01-20 bghe@nanolab''
*200 nm/min ''fall 2016 by Martin Lind Ommen @nanotech''
|-
 
|}
 
<br clear="all" />
 
==Al2O3 etching by Sanjeev Vishal Kota sanvis@nanolab==
*[[Media:Alumina etch information.pptx|Presentation made by Sanvis @DTU Nanolab, click to view]]
 
{| border="1" cellspacing="2" cellpadding="2"
|-style="background:Black; color:White"
! Parameter
|Nanoscale Al2O3 etch
|Microscale Al2O3 etch
|-
|-
|TEOS oxide (5% load)
|Coil Power [W]
|'''233nm/min &plusmn;0.7%''' - "&plusmn;" represents the non-uniformity over a 100mm wafer - etched in Marts 2013 ''by LN/BGE@danchip''
|300
|500
|-
|-
|PECVD1 (standard) oxide (5% load)
|Platen Power [W]
|'''242nm/min &plusmn;0.6%''' - "&plusmn;" represents the non-uniformity over a 100mm wafer - etched in Marts 2013 by ''LN/BGE@danchip''
|15
|70
|-
|-
|Al2O3 from the ALD
|Platen temperature [<sup>o</sup>C]
|0
|0
|-
|BCl3 flow [sccm]
|20
|40
|-
|Cl<sub>2</sub> flow [sccm]
|7
|15
|-
|Pressure [mTorr]
|1.2
|3.0
|-
|}
 


|
{| border="2" cellspacing="2" cellpadding="3"
*34.2 nm/min (1:6 to SiO2) ''fall 2016 by Martin Lind Ommen @nanotech''
|-style="background:DarkGray; color:White"
*50nm can be etched in 10min - [[/Etch of Al2O3|'''See results here''']] etched in November 2014 by ''FRSTO@danchip''
!Material to be etched
!Nanoscale Al2O3 etch
!Microscale Al2O3 etch
|-
|Etch rate
|'''6.25 nm/min on 6" wafer''',  ''Summer sanvis@nanolab''
|'''25 nm/min on small samples on Si carrier''', ''Summer 2022 sanvis@nanolab''
|-
 
|}
 
<br clear="all" />
 
==Al2O3 etching by bghe@nanolab==
 
===Recipes===
{| border="2" cellpadding="2" cellspacing="1" style="text-align:center;"
|+ '''Al2O3 etch'''
|-
! Parameter
! width="200" | Recipe 1:Al2O3 etch platen only
|-
! BCl<sub>3</sub> (sccm)
| 15
|-
! Ar (sccm)
| 15
|-
! Pressure (mTorr)
| 5
|-
|-
|Silicon rich nitride from furnace B2
! Coil power (W)
|136nm was etched in 1min (whole wafer) - etched in October 2015 by ''bghe@danchip''
| 0
|-
! Platen power (W)
| 30
|-
|-
|Cr
! Temperature (<sup>o</sup>C)
|6 nm/min (1:33 to SiO2) ''fall 2016 by Martin Lind Ommen @nanotech''
| 20
|-
|-
|Al
! Spacers (mm)
|18nm/min (1:11 to SiO2) ''fall 2016 by Martin Lind Ommen @nanotech''
| 100 mm
|-
|-
|}
|}


<br clear="all" />
===Results===
<gallery caption="Profile view, etch time 40 min, started with 380 nm zep resist" widths="400px" heights="325px" perrow="3">
 
Image:S038116_01.jpg
Image:S038116_12.jpg
Image:S038116_14.jpg
Image:S038116_16.jpg
Image:S038116_17.jpg
Image:S038116_18.jpg
 
</gallery>
 
<gallery caption="Top view after resist strip" widths="400px" heights="325px" perrow="3">
 
Image:metalS038116top_03.jpg
Image:metalS038116top_04.jpg
Image:metalS038116top_06.jpg
 
</gallery>

Latest revision as of 12:48, 14 May 2024

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Al2O3 etching with the ICP metal

Parameter Recipe name: Al2O3 Etch
Coil Power [W] 1200
Platen Power [W] 200
Platen temperature [oC] 0
BCl3 flow [sccm] 60
Cl2 flow [sccm] 30
Pressure [mTorr] 4


Material to be etched Etch rate using the above parameters
Al2O3
  • ~93nm/min (30s, 1/4 wafer on 6" carrier)
    2017-01-20 bghe@nanolab


Al2O3 etching by Sanjeev Vishal Kota sanvis@nanolab

Parameter Nanoscale Al2O3 etch Microscale Al2O3 etch
Coil Power [W] 300 500
Platen Power [W] 15 70
Platen temperature [oC] 0 0
BCl3 flow [sccm] 20 40
Cl2 flow [sccm] 7 15
Pressure [mTorr] 1.2 3.0


Material to be etched Nanoscale Al2O3 etch Microscale Al2O3 etch
Etch rate 6.25 nm/min on 6" wafer, Summer sanvis@nanolab 25 nm/min on small samples on Si carrier, Summer 2022 sanvis@nanolab


Al2O3 etching by bghe@nanolab

Recipes

Al2O3 etch
Parameter Recipe 1:Al2O3 etch platen only
BCl3 (sccm) 15
Ar (sccm) 15
Pressure (mTorr) 5
Coil power (W) 0
Platen power (W) 30
Temperature (oC) 20
Spacers (mm) 100 mm

Results

  • Profile view, etch time 40 min, started with 380 nm zep resist
  • Top view after resist strip
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