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'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/Strip click here]'''
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'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php?title=Specific_Process_Knowledge/Lithography/Strip click here]'''
 
[[Category: Equipment|Lithography strip]]
[[Category: Lithography|Strip]]
 
__TOC__


= Strip Comparison Table =
= Strip Comparison Table =
{| border="2" cellspacing="0" cellpadding="2"  
{|border="1" cellspacing="1" cellpadding="10" style="text-align:left;"  


!colspan="2" border="none" style="background:silver; color:black;" align="center"|Equipment  
!colspan="2" border="none" style="background:silver; color:black;" align="center"|Equipment  
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/Strip#Plasma Asher 1|Plasma Asher 1]]</b>
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/Strip#Plasma_Asher_1|Plasma Asher 1]]</b>
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/Strip#Plasma Asher 2|Plasma Asher 2]]</b>
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/Strip#Plasma Asher 2|Plasma Asher 2]]</b>
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/Strip#III-V Plasma Asher|III-V Plasma Asher]]</b>
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/Strip#Plasma Asher 3: Descum|Plasma Asher 3: Descum]]</b>
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/Strip#Acetone Strip|Acetone Strip]]</b>
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/Strip#Resist Strip|Resist strip]]</b>
|style="background:WhiteSmoke; color:black"|<b>[[Specific Process Knowledge/Lithography/LiftOff|Lift-off]]</b>
|style="background:WhiteSmoke; color:black"|<b>[[Specific Process Knowledge/Lithography/LiftOff|Lift-off]]</b>


Line 19: Line 26:
Clean wafers only, no metal  
Clean wafers only, no metal  
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
III-V materials only
Resist descum
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
Resist strip
Resist strip, no metal lift off
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
Resist strip or lift-off
Lift-off


|-
|-
Line 38: Line 45:
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
Solvent and ultra sound
Solvent and ultra sound
|-
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameters
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameters
Line 47: Line 53:
*CF<sub>4</sub>
*CF<sub>4</sub>
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*O<sub>2</sub>
*O<sub>2</sub> (0 - 400 sccm)
*N<sub>2</sub>
*N<sub>2</sub>
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*O<sub>2</sub>
*O<sub>2</sub> (flow unknown)
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*NA
*NA
Line 63: Line 69:
*1000 W
*1000 W
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*100%
*100% (power unknown)
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*NA
*NA
Line 78: Line 84:
*NA
*NA
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Acetone
*NMP (Remover 1165)
*Rinse in IPA
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Acetone
*NMP (Remover 1165)
*NMP (Remover 1165)
*Rinse in IPA


|-
|-
Line 90: Line 97:
*1 50 mm wafer
*1 50 mm wafer
*1 - 30 100 mm wafers
*1 - 30 100 mm wafers
*1 - 30 150 mm wafers
*1 - 25 150 mm wafers
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*1 small sample
*1 small sample
*1 50 mm wafer
*1 50 mm wafer
*1 - 30 100 mm wafers
*1 - 30 100 mm wafers
*1 - 30 150 mm wafers
*1 - 25 150 mm wafers
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*1 small sample
*1 small sample
Line 102: Line 109:
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*1 - 25 100 mm wafers
*1 - 25 100 mm wafers
*1 - 25 150 mm wafers
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*1 - 25 100 mm wafers
*1 - 25 100 mm wafers
 
*1 - 25 150 mm wafers
|-
|-
| style="background:LightGrey; color:black"|Allowed materials
|style="background:LightGrey; color:black"|Allowed materials
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Si and silicon oxide, silicon nitride
*Silicon, glass, and polymer substrates
*Quartz, pyrex
*Film or pattern of all but Type IV
*Metal patterning
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*No metal!
<b>No metal allowed!</b>
*Si and silicon oxide, silicon nitride
*Silicon, glass, and polymer substrates
*Quartz, pyrex
*Film or pattern of photoresist/polymer
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*III-V compounds
*Silicon, III-V, and glass substrates
*Film or pattern of all but Type IV
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Si and silicon oxide, silicon nitride
<b>No metal allowed!</b>
*Quartz, pyrex
*Silicon, glass, and polymer substrates
*Film or pattern of photoresist/polymer
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Si and silicon oxide, silicon nitride
*Silicon and glass substrates
*Quartz, pyrex
*Film or pattern of all but Type IV
*All metals
|-  
|-  
|}
|}
Line 129: Line 137:
<br clear="all" />
<br clear="all" />


= Plasma ashing =
= Plasma Ashing =


{|border="1" cellspacing="1" cellpadding="10" style="text-align:left;"
|-


{| border="2" cellspacing="0" cellpadding="4" align="left"
|-style="background:silver; color:black"
!
|
! Photoresist stripping
! Photoresist stripping
! [[Specific_Process_Knowledge/Lithography/Descum|Descum after lithography]]
! Surface treatment of plastic, ceramic and metal
! Surface treatment of plastic, ceramic and metal
! Ashing of organic material
! Ashing of organic material
|-  
|-  
|'''Process pressure'''
 
|0.8- 1.0mbar
|-style="background:whitesmoke; color:black"
!Process pressure
|0.8- 1.2mbar
|0.5- 1.0mbar  
|0.5- 1.0mbar  
|0.5- 1.0mbar  
|0.8-1.5mbar
|0.8-1.5mbar
|-
|-
|'''Process gases'''
 
|O<sub>2</sub>, N<sub>2</sub>
|-style="background:silver; color:black"
|O<math>_2</math>, CF<math>_4</math>, N<math>_2</math> or their mixtures
!Process gases
|
*O<sub>2</sub> (400 sccm)
*N<sub>2</sub> (0-70 sccm)
|
*O<sub>2</sub> (70-210 sccm)
*N<sub>2</sub> (0-70 sccm)
|O<sub>2</sub>, CF<sub>4</sub>, N<sub>2</sub> or their mixtures
|O<sub>2</sub>
|O<sub>2</sub>
|-
|-
|'''Process  power'''
 
|-style="background:whitesmoke; color:black"
!Process  power
|600-1000W
|600-1000W
|150-300W
|150-300W
|150-300W
|1000W or less for heat- sensitive materials
|1000W or less for heat- sensitive materials
|-
|-
|'''Process  time'''
 
|5-60min, depending of photoresist thickness
|-style="background:silver; color:black"
!Process  time
|5-60 minutes
|1-5 minutes
|a few seconds to a few minutes
|a few seconds to a few minutes
|Between 0.5 and 20 hours, depending on the material
|Between 0.5 and 20 hours, depending on the material
|-
|-
|'''Batch size'''
 
|1-10 wafers at a time
|-style="background:whitesmoke; color:black"
!Batch size
|1-30
|1-10
|1 wafer at a time
|1 wafer at a time
|1 wafer at a time, use a container: Petri dish, evaporating dish weighing dish, beaker, etc.
|1 wafer at a time, use a container, e.g Petri dish
|-
|'''Size of substrate'''
|2"-6"
|2"-6"
|2"-6"
|-
|'''Allowed materials'''
|All
|All
|All
 
|-
|-
|}
|}
Line 178: Line 197:
<br clear="all" />
<br clear="all" />


A typical process time for stripping of 1.5 µm AZ5214e resist is 15-25 min and for stripping of 9.5 µm AZ4562 resist is 20-35 min with the process parameters: 210ml O<math>_2</math>/min or mixture of 210ml O<math>_2</math>/min and 70ml N<math>_2</math>/min, power 1000W.
 
Typical process time for stripping in plasma asher 1 or 2:
*1.5 µm AZ 5214E resist film: ~15 min
*10 µm AZ 4562 resist film: ~45 min
 
Typical process parameters:  
*O<sub>2</sub>: 400 ml/min
*N<sub>2</sub>: 70 ml/min
*Power: 1000 W
 
 
A typical descum process in plasma asher 1 or 2:
*O<sub>2</sub>: 70 ml/min
*N<sub>2</sub>: 70 ml/min
*Power: 150 W
*Time : 10 min
 
 
Be sure to wait for chamber to cool down to room temperature, before runinng descum processes in plasma asher 1 or 2. At a load of 2 Fused silica wafers, the amount of resist removed will be 10 - 1500 nm.
 
'''NB: Use dedicated descum asher Plasma Asher 3: Descum for descumming.'''


==Plasma Asher 1==
==Plasma Asher 1==
[[Image:plasmaasher2.JPG|300x300px|thumb|The PlasmaAsher1 is placed in C-1]]
[[Image:plasmaasher2.JPG|300x300px|thumb|The Plasma Asher 1 is placed in C-1]]


The Plasma Asher1( 300 auto load model) can be used for the following process:
The Plasma Asher 1 (TePla 300 auto load model) can be used for the following process:


*Photoresist stripping
*Photoresist stripping
*Descumming
*Surface cleaning after storage
*Surface cleaning after storage
*Surface cleaning after processes using oil pump or diffusion pump vacuum
*Surface cleaning after processes using oil pump or diffusion pump vacuum
*Surface cleaning as part of photolithography after wet developing of lacquer structures prior to wet or plasma etching
*Surface cleaning as part of photolithography after wet developing of lacquer structures prior to wet or plasma etching
*Stripping of photoresist layers after etching, including after being exposed to high temperatures as after implantation, ion etching, sputter etching, RIE
*Stripping of photoresist layers after etching, including after being exposed to high temperatures as after implantation, ion etching, sputter etching, RIE
*Removal of organic passivating layers and masks
*Removal of organic passivation layers and masks
*Etching of glass and ceramic
*Etching of glass and ceramic
*Etching of SiO<math>_2</math>, Si<math>_3</math>N<math>_4</math>, Si
*Etching of SiO<math>_2</math>, Si<math>_3</math>N<math>_4</math>, Si
*Removal of polyimide layers
*Removal of polyimide layers


The machine can be used for almost every materials, but if you have any doubt about your materials are compatible with the plasma process it is better to ask photolithography group at Danchip.
The machine can be used for almost every materials, but if you have any doubt about your materials are compatible with the plasma process it is better to ask photolithography group at Nanolab.


The user manual, user APV, and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=55 LabManager] - '''requires login'''


===Process Information===
===Process Information===
*[[Specific Process Knowledge/Etch/Etching of Silicon Oxide/SiO2 etch using Plasma Asher |SiO2 etch using Plasma Asher 1]]
*[[Specific Process Knowledge/Etch/Etching of Silicon Oxide/SiO2 etch using Plasma Asher |SiO2 etch using Plasma Asher 1]]
 
*[[Specific Process Knowledge/Lithography/Descum|Descum]]


==Plasma Asher 2==
==Plasma Asher 2==
Line 219: Line 260:
Time: 5 -30 min., depending on photoresist type and thickness
Time: 5 -30 min., depending on photoresist type and thickness


A typical process time for stripping of 1.5 um AZ5214e resist is 25 min for 6 wafers load in a boat, recipe 1.  
A typical process time for stripping of 1.5 um AZ5214e resist is 25 min for 6 wafers load in a boat, recipe 18.  
 
A Descum process in manual mode: O2:70, N2:70, power:150W, time:10 min


A Descum process in manuel mode:O2:70, N2:70, power:150W, time:10min Be sure to wait for cooling if the mashine has been used at 1000W right before.
Be sure to wait for cooling if the mashine has been used at 1000W right before.  
At a load at 2 Fused silicawafers resist removed 0.01-01,5um
At a load at 2 Fused silica wafers resist removed 0.01-01,5um


The other materials have not been tested yet.
The other materials have not been tested yet.
The user manual, user APV, and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=200 LabManager] - '''requires login'''
===Process Information===
*[[Specific Process Knowledge/Lithography/Descum|Descum]]


<br clear="all" />
<br clear="all" />


<!-- TARAN 220-03-05
==III-V Plasma Asher==
==III-V Plasma Asher==
[[Image:III-V_asher.jpg|300x300px|thumb|Plasma asher for removing resist on III-V samples: positioned in A-5]]
[[Image:III-V_asher.jpg|300x300px|thumb|Plasma asher for removing resist on III-V samples: positioned in A-5]]
Diener Pico Plasma Asher for III-V materials.
The user manual and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=186 LabManager] - '''requires login'''


<br clear="all" />
<br clear="all" />
-->


=Acetone Strip=
==Plasma Asher 3: Descum==
[[image:2017-03-15 13.12.45.jpg|350x350px|thumb|Plasma Asher 3: Descum is placed A-5]]


[[Image:Lift-off wet bench.JPG|300x300px|thumb|Acetone strip bench in D-3]]
The Plasma Asher 3: Descum dedicated for resist descum i.e. removal of remains resist traces after development. It has a small chamber, so you can only load one 4 inch substrate ad time or few smaller pieces.


{| border="1" cellspacing="0" cellpadding="4" align="left"
In this machine, only O2 and N2 gases are used for processes.
|[[Image:Acetone_rough.jpg|150x150px|thumb|Acetone bath "rough" for removing most of the resist]]
 
|[[Image:Acetone_fine.jpg|150x150px|thumb|Acetone bath "fine" for removing the rest of the resist incl. ultrasound]]
The typical process parameters when operating the equipment:
|-
 
|}
*Photeresist descum
Pressure: 0.2 - 0.8mbar
Gas: O2
Power: 50% - 100%
Time: 1 -10 min., depending on photoresist type and thickness
 
The other materials have not been tested yet.
 
The user manual, user APV, and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=423 LabManager] - '''requires login'''
 
===Process Information===
*[[Specific Process Knowledge/Lithography/Descum|Descum]]
 
<br clear="all" />
 
<!-- TARAN 220-03-05
==III-V Plasma Asher==
[[Image:III-V_asher.jpg|300x300px|thumb|Plasma asher for removing resist on III-V samples: positioned in A-5]]
 
Diener Pico Plasma Asher for III-V materials.
 
The user manual and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=186 LabManager] - '''requires login'''
 
<br clear="all" />
-->
 
=Resist Strip=
[[Image:Resist_strip.jpg|300x300px|thumb|Resist strip bench in D-3]]
 
This resist strip is only for wafers without metal and SU-8.


This acetone strip is only for wafers without metal and SU-8.
There are one Remover 1165 bath for stripping and one IPA bath for rinsing.


There are two acetone bath: one rough for stripping the most of the resist from the surface and one fine with a ultrasound for cleaning the  resists remains.
'''Here are the main rules for resist strip use:'''
*Place the wafers in a wafer holder and put them in the first bath for 10 min, this time is depending how much resist you have on the surface.
*After the strip rinse your wafers in the IPA bath for 2-3 min.
*Rinse your wafers for 4-5 min. in running water after stripping.




'''Here are the main rules for acetone strip use:'''
The user manual and contact information can be found in LabManager: [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=385 Resist Strip] - '''requires login'''
*Place the wafers in a wafer holder and put them in the first bath for 2-5 min, this time is depending how much resist you have on the surface.
*After the rough strip place your wafers directly in the final bath, switch on for the ultra sound  and strip them for 2-3 min.
*Rinse your wafers for 4-5 min. in running water after stripping .


<br clear="all" />
<br clear="all" />


=Overview of acetone benches=
==Overview of wet bench 06 and 07==
 
{|border="1" cellspacing="1" cellpadding="10" style="text-align:left;"


{| border="2" cellspacing="0" cellpadding="4" align="left"
|-style="background:silver; color:black"
!
|
! Acetone strip
! [[Specific Process Knowledge/Lithography/Strip#Resist_Strip|Resist Strip]]
! Lift-off  
! [[Specific Process Knowledge/Lithography/LiftOff#Lift-off_wet_bench_07|Lift-off]]
|-  
|-  
|'''General description'''
 
|
|-style="background:whitesmoke; color:black"
wet stripping of resist
!General description'''
|
|Wet stripping of resist
lift-off process
|Lift-off process
|-
|-
|'''Chemical solution'''
 
|CH<sub>3</sub>COCH<sub>3</sub>
|-style="background:silver; color:black"
|CH<sub>3</sub>COCH<sub>3</sub>
!Chemical solution
|NMP Remover 1165
|NMP Remover 1165
|-
|-
|'''Process temperature'''
|20 <sup>o</sup>C
|20 <sup>o</sup>C


|-style="background:whitesmoke; color:black"
!Process temperature
|Up to 65°C
|Up to 65°C
|-
|-


|'''Batch size'''
|-style="background:silver; color:black"
!Batch size
|
|
1-25 wafers at a time
1 - 25 wafers
|
|
1-25 wafer at a time
1 - 25 wafers
|-
|-
|'''Size of substrate'''
 
|-style="background:whitesmoke; color:black"
!Size of substrate
|
|
4" wafers
*100 mm wafers
*150 mm wafers
|
|
4" wafers
*100 mm wafers
*150 mm wafers
|-
|-
|'''Allowed materials'''
 
|-style="background:silver; color:black"
!Allowed materials
|
|
*Silicon
*Silicon
Line 297: Line 392:
*Silicon Nitride
*Silicon Nitride
*Silicon Oxynitride
*Silicon Oxynitride
|
|
*All metals
All metals except Type IV (Pb, Te)
 
|-
|-
|}
|}

Latest revision as of 10:17, 18 March 2024

The contents on this page, including all images and pictures, was created by DTU Nanolab staff unless otherwise stated.

Feedback to this page: click here

Strip Comparison Table

Equipment Plasma Asher 1 Plasma Asher 2 Plasma Asher 3: Descum Resist strip Lift-off
Purpose

All purposes

Clean wafers only, no metal

Resist descum

Resist strip, no metal lift off

Lift-off

Method

Plasma ashing

Plasma ashing

Plasma ashing

Solvent and ultra sound

Solvent and ultra sound

Process parameters Process gasses
  • O2 (0 - 400 sccm)
  • N2
  • CF4
  • O2 (0 - 400 sccm)
  • N2
  • O2 (flow unknown)
  • NA
  • NA
Max. process power
  • 1000 W
  • 1000 W
  • 100% (power unknown)
  • NA
  • NA
Solvent
  • NA
  • NA
  • NA
  • NMP (Remover 1165)
  • Rinse in IPA
  • NMP (Remover 1165)
  • Rinse in IPA
Substrates Batch size
  • 1 small sample
  • 1 50 mm wafer
  • 1 - 30 100 mm wafers
  • 1 - 25 150 mm wafers
  • 1 small sample
  • 1 50 mm wafer
  • 1 - 30 100 mm wafers
  • 1 - 25 150 mm wafers
  • 1 small sample
  • 1 50 mm wafer
  • 1 100 mm wafer
  • 1 - 25 100 mm wafers
  • 1 - 25 150 mm wafers
  • 1 - 25 100 mm wafers
  • 1 - 25 150 mm wafers
Allowed materials
  • Silicon, glass, and polymer substrates
  • Film or pattern of all but Type IV

No metal allowed!

  • Silicon, glass, and polymer substrates
  • Film or pattern of photoresist/polymer
  • Silicon, III-V, and glass substrates
  • Film or pattern of all but Type IV

No metal allowed!

  • Silicon, glass, and polymer substrates
  • Film or pattern of photoresist/polymer
  • Silicon and glass substrates
  • Film or pattern of all but Type IV


Plasma Ashing

Photoresist stripping Descum after lithography Surface treatment of plastic, ceramic and metal Ashing of organic material
Process pressure 0.8- 1.2mbar 0.5- 1.0mbar 0.5- 1.0mbar 0.8-1.5mbar
Process gases
  • O2 (400 sccm)
  • N2 (0-70 sccm)
  • O2 (70-210 sccm)
  • N2 (0-70 sccm)
O2, CF4, N2 or their mixtures O2
Process power 600-1000W 150-300W 150-300W 1000W or less for heat- sensitive materials
Process time 5-60 minutes 1-5 minutes a few seconds to a few minutes Between 0.5 and 20 hours, depending on the material
Batch size 1-30 1-10 1 wafer at a time 1 wafer at a time, use a container, e.g Petri dish



Typical process time for stripping in plasma asher 1 or 2:

  • 1.5 µm AZ 5214E resist film: ~15 min
  • 10 µm AZ 4562 resist film: ~45 min

Typical process parameters:

  • O2: 400 ml/min
  • N2: 70 ml/min
  • Power: 1000 W


A typical descum process in plasma asher 1 or 2:

  • O2: 70 ml/min
  • N2: 70 ml/min
  • Power: 150 W
  • Time : 10 min


Be sure to wait for chamber to cool down to room temperature, before runinng descum processes in plasma asher 1 or 2. At a load of 2 Fused silica wafers, the amount of resist removed will be 10 - 1500 nm.

NB: Use dedicated descum asher Plasma Asher 3: Descum for descumming.

Plasma Asher 1

The Plasma Asher 1 is placed in C-1

The Plasma Asher 1 (TePla 300 auto load model) can be used for the following process:

  • Photoresist stripping
  • Descumming
  • Surface cleaning after storage
  • Surface cleaning after processes using oil pump or diffusion pump vacuum
  • Surface cleaning as part of photolithography after wet developing of lacquer structures prior to wet or plasma etching
  • Stripping of photoresist layers after etching, including after being exposed to high temperatures as after implantation, ion etching, sputter etching, RIE
  • Removal of organic passivation layers and masks
  • Etching of glass and ceramic
  • Etching of SiO, SiN, Si
  • Removal of polyimide layers

The machine can be used for almost every materials, but if you have any doubt about your materials are compatible with the plasma process it is better to ask photolithography group at Nanolab.

The user manual, user APV, and contact information can be found in LabManager - requires login

Process Information

Plasma Asher 2

Plasma asher for removing AZ resist on 6" wafers: positioned in E-5

The Plasma Asher 2 is the same as Plasma Asher 1 but has another loading system which is more convenient for batch loading of 6inch substrates.

In this machine, only O2 and N2 gases are used for processes (in PlasmaAsher1, CF4 is used as well).

The typical process parameters when operating the equipment:

  • Photeresist stripping

Pressure: 0.8 - 1.0 mbar

Gas: O2

Power: 600 - 1000 watts

Time: 5 -30 min., depending on photoresist type and thickness

A typical process time for stripping of 1.5 um AZ5214e resist is 25 min for 6 wafers load in a boat, recipe 18.

A Descum process in manual mode: O2:70, N2:70, power:150W, time:10 min

Be sure to wait for cooling if the mashine has been used at 1000W right before. At a load at 2 Fused silica wafers resist removed 0.01-01,5um

The other materials have not been tested yet.

The user manual, user APV, and contact information can be found in LabManager - requires login

Process Information



Plasma Asher 3: Descum

Plasma Asher 3: Descum is placed A-5

The Plasma Asher 3: Descum dedicated for resist descum i.e. removal of remains resist traces after development. It has a small chamber, so you can only load one 4 inch substrate ad time or few smaller pieces.

In this machine, only O2 and N2 gases are used for processes.

The typical process parameters when operating the equipment:

  • Photeresist descum

Pressure: 0.2 - 0.8mbar Gas: O2 Power: 50% - 100% Time: 1 -10 min., depending on photoresist type and thickness

The other materials have not been tested yet.

The user manual, user APV, and contact information can be found in LabManager - requires login

Process Information



Resist Strip

Resist strip bench in D-3

This resist strip is only for wafers without metal and SU-8.

There are one Remover 1165 bath for stripping and one IPA bath for rinsing.

Here are the main rules for resist strip use:

  • Place the wafers in a wafer holder and put them in the first bath for 10 min, this time is depending how much resist you have on the surface.
  • After the strip rinse your wafers in the IPA bath for 2-3 min.
  • Rinse your wafers for 4-5 min. in running water after stripping.


The user manual and contact information can be found in LabManager: Resist Strip - requires login


Overview of wet bench 06 and 07

Resist Strip Lift-off
General description Wet stripping of resist Lift-off process
Chemical solution NMP Remover 1165 NMP Remover 1165
Process temperature Up to 65°C Up to 65°C
Batch size

1 - 25 wafers

1 - 25 wafers

Size of substrate
  • 100 mm wafers
  • 150 mm wafers
  • 100 mm wafers
  • 150 mm wafers
Allowed materials
  • Silicon
  • Silicon Oxide
  • Silicon Nitride
  • Silicon Oxynitride

All metals except Type IV (Pb, Te)