Specific Process Knowledge/Lithography/Strip: Difference between revisions
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'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php?title=Specific_Process_Knowledge/Lithography/Strip click here]''' | |||
[[Category: Equipment|Lithography strip]] | |||
[[Category: Lithography|Strip]] | |||
__TOC__ | |||
= Strip Comparison Table = | = Strip Comparison Table = | ||
{| border=" | {|border="1" cellspacing="1" cellpadding="10" style="text-align:left;" | ||
!colspan="2" border="none" style="background:silver; color:black;" align="center"|Equipment | !colspan="2" border="none" style="background:silver; color:black;" align="center"|Equipment | ||
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/Strip# | |style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/Strip#Plasma_Asher_1|Plasma Asher 1]]</b> | ||
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/Strip#Plasma Asher 2|Plasma Asher 2]]</b> | |style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/Strip#Plasma Asher 2|Plasma Asher 2]]</b> | ||
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/Strip# | |style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/Strip#Plasma Asher 3: Descum|Plasma Asher 3: Descum]]</b> | ||
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/Strip# | |style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/Strip#Resist Strip|Resist strip]]</b> | ||
|style="background:WhiteSmoke; color:black"|<b>[[Specific Process Knowledge/Lithography/LiftOff|Lift-off]]</b> | |style="background:WhiteSmoke; color:black"|<b>[[Specific Process Knowledge/Lithography/LiftOff|Lift-off]]</b> | ||
Line 19: | Line 26: | ||
Clean wafers only, no metal | Clean wafers only, no metal | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
Resist descum | |||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
Resist strip | Resist strip, no metal lift off | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
Lift-off | |||
|- | |- | ||
Line 38: | Line 45: | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
Solvent and ultra sound | Solvent and ultra sound | ||
|- | |- | ||
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameters | !style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameters | ||
Line 47: | Line 53: | ||
*CF<sub>4</sub> | *CF<sub>4</sub> | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
*O<sub>2</sub> | *O<sub>2</sub> (0 - 400 sccm) | ||
*N<sub>2</sub> | *N<sub>2</sub> | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
*O<sub>2</sub> | *O<sub>2</sub> (flow unknown) | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
*NA | *NA | ||
Line 63: | Line 69: | ||
*1000 W | *1000 W | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
*100% | *100% (power unknown) | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
*NA | *NA | ||
Line 78: | Line 84: | ||
*NA | *NA | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
* | *NMP (Remover 1165) | ||
*Rinse in IPA | |||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
*NMP (Remover 1165) | *NMP (Remover 1165) | ||
*Rinse in IPA | |||
|- | |- | ||
Line 90: | Line 97: | ||
*1 50 mm wafer | *1 50 mm wafer | ||
*1 - 30 100 mm wafers | *1 - 30 100 mm wafers | ||
*1 - | *1 - 25 150 mm wafers | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
*1 small sample | *1 small sample | ||
*1 50 mm wafer | *1 50 mm wafer | ||
*1 - 30 100 mm wafers | *1 - 30 100 mm wafers | ||
*1 - | *1 - 25 150 mm wafers | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
*1 small sample | *1 small sample | ||
Line 102: | Line 109: | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
*1 - 25 100 mm wafers | *1 - 25 100 mm wafers | ||
*1 - 25 150 mm wafers | |||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
*1 - 25 100 mm wafers | *1 - 25 100 mm wafers | ||
*1 - 25 150 mm wafers | |||
|- | |- | ||
| style="background:LightGrey; color:black"|Allowed materials | |style="background:LightGrey; color:black"|Allowed materials | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
* | *Silicon, glass, and polymer substrates | ||
*Film or pattern of all but Type IV | |||
* | |||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
<b>No metal allowed!</b> | |||
* | *Silicon, glass, and polymer substrates | ||
* | *Film or pattern of photoresist/polymer | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
*III-V | *Silicon, III-V, and glass substrates | ||
*Film or pattern of all but Type IV | |||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
* | <b>No metal allowed!</b> | ||
* | *Silicon, glass, and polymer substrates | ||
*Film or pattern of photoresist/polymer | |||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
* | *Silicon and glass substrates | ||
* | *Film or pattern of all but Type IV | ||
|- | |- | ||
|} | |} | ||
Line 129: | Line 137: | ||
<br clear="all" /> | <br clear="all" /> | ||
=Plasma | = Plasma Ashing = | ||
{|border="1" cellspacing="1" cellpadding="10" style="text-align:left;" | |||
|- | |||
|-style="background:silver; color:black" | |||
| | |||
! Photoresist stripping | ! Photoresist stripping | ||
! [[Specific_Process_Knowledge/Lithography/Descum|Descum after lithography]] | |||
! Surface treatment of plastic, ceramic and metal | ! Surface treatment of plastic, ceramic and metal | ||
! Ashing of organic material | ! Ashing of organic material | ||
|- | |- | ||
| | |||
|0.8- 1.0mbar | |-style="background:whitesmoke; color:black" | ||
!Process pressure | |||
|0.8- 1.2mbar | |||
|0.5- 1.0mbar | |||
|0.5- 1.0mbar | |0.5- 1.0mbar | ||
|0.8-1.5mbar | |0.8-1.5mbar | ||
|- | |- | ||
| | |||
|O<sub>2</sub> | |-style="background:silver; color:black" | ||
|O< | !Process gases | ||
| | |||
*O<sub>2</sub> (400 sccm) | |||
*N<sub>2</sub> (0-70 sccm) | |||
| | |||
*O<sub>2</sub> (70-210 sccm) | |||
*N<sub>2</sub> (0-70 sccm) | |||
|O<sub>2</sub>, CF<sub>4</sub>, N<sub>2</sub> or their mixtures | |||
|O<sub>2</sub> | |O<sub>2</sub> | ||
|- | |- | ||
| | |||
|-style="background:whitesmoke; color:black" | |||
!Process power | |||
|600-1000W | |600-1000W | ||
|150-300W | |||
|150-300W | |150-300W | ||
|1000W or less for heat- sensitive materials | |1000W or less for heat- sensitive materials | ||
|- | |- | ||
| | |||
|5- | |-style="background:silver; color:black" | ||
!Process time | |||
|5-60 minutes | |||
|1-5 minutes | |||
|a few seconds to a few minutes | |a few seconds to a few minutes | ||
|Between 0.5 and 20 hours, depending on the material | |Between 0.5 and 20 hours, depending on the material | ||
|- | |- | ||
| | |||
|1-10 | |-style="background:whitesmoke; color:black" | ||
!Batch size | |||
|1-30 | |||
|1-10 | |||
|1 wafer at a time | |1 wafer at a time | ||
|1 wafer at a time, use a container | |1 wafer at a time, use a container, e.g Petri dish | ||
|- | |- | ||
|} | |} | ||
Line 199: | Line 197: | ||
<br clear="all" /> | <br clear="all" /> | ||
=Plasma Asher 2 = | Typical process time for stripping in plasma asher 1 or 2: | ||
[[Image:Plasma_Asher_6inch.jpg|300x300px|thumb|Plasma asher for removing AZ resist on 6" wafers: positioned in | *1.5 µm AZ 5214E resist film: ~15 min | ||
*10 µm AZ 4562 resist film: ~45 min | |||
Typical process parameters: | |||
*O<sub>2</sub>: 400 ml/min | |||
*N<sub>2</sub>: 70 ml/min | |||
*Power: 1000 W | |||
A typical descum process in plasma asher 1 or 2: | |||
*O<sub>2</sub>: 70 ml/min | |||
*N<sub>2</sub>: 70 ml/min | |||
*Power: 150 W | |||
*Time : 10 min | |||
Be sure to wait for chamber to cool down to room temperature, before runinng descum processes in plasma asher 1 or 2. At a load of 2 Fused silica wafers, the amount of resist removed will be 10 - 1500 nm. | |||
'''NB: Use dedicated descum asher Plasma Asher 3: Descum for descumming.''' | |||
==Plasma Asher 1== | |||
[[Image:plasmaasher2.JPG|300x300px|thumb|The Plasma Asher 1 is placed in C-1]] | |||
The Plasma Asher 1 (TePla 300 auto load model) can be used for the following process: | |||
*Photoresist stripping | |||
*Descumming | |||
*Surface cleaning after storage | |||
*Surface cleaning after processes using oil pump or diffusion pump vacuum | |||
*Surface cleaning as part of photolithography after wet developing of lacquer structures prior to wet or plasma etching | |||
*Stripping of photoresist layers after etching, including after being exposed to high temperatures as after implantation, ion etching, sputter etching, RIE | |||
*Removal of organic passivation layers and masks | |||
*Etching of glass and ceramic | |||
*Etching of SiO<math>_2</math>, Si<math>_3</math>N<math>_4</math>, Si | |||
*Removal of polyimide layers | |||
The machine can be used for almost every materials, but if you have any doubt about your materials are compatible with the plasma process it is better to ask photolithography group at Nanolab. | |||
The user manual, user APV, and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=55 LabManager] - '''requires login''' | |||
===Process Information=== | |||
*[[Specific Process Knowledge/Etch/Etching of Silicon Oxide/SiO2 etch using Plasma Asher |SiO2 etch using Plasma Asher 1]] | |||
*[[Specific Process Knowledge/Lithography/Descum|Descum]] | |||
==Plasma Asher 2== | |||
[[Image:Plasma_Asher_6inch.jpg|300x300px|thumb|Plasma asher for removing AZ resist on 6" wafers: positioned in E-5]] | |||
The Plasma Asher 2 is the same as Plasma Asher 1 but has another loading system which is more convenient for batch loading of 6inch substrates. | The Plasma Asher 2 is the same as Plasma Asher 1 but has another loading system which is more convenient for batch loading of 6inch substrates. | ||
Line 218: | Line 260: | ||
Time: 5 -30 min., depending on photoresist type and thickness | Time: 5 -30 min., depending on photoresist type and thickness | ||
A typical process time for stripping of 1.5 um AZ5214e resist is 25 min for 6 wafers load in a boat, recipe | A typical process time for stripping of 1.5 um AZ5214e resist is 25 min for 6 wafers load in a boat, recipe 18. | ||
A Descum process in | A Descum process in manual mode: O2:70, N2:70, power:150W, time:10 min | ||
At a load at 2 Fused | |||
Be sure to wait for cooling if the mashine has been used at 1000W right before. | |||
At a load at 2 Fused silica wafers resist removed 0.01-01,5um | |||
The other materials have not been tested yet. | The other materials have not been tested yet. | ||
=III-V Plasma Asher = | The user manual, user APV, and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=200 LabManager] - '''requires login''' | ||
===Process Information=== | |||
*[[Specific Process Knowledge/Lithography/Descum|Descum]] | |||
<br clear="all" /> | |||
<!-- TARAN 220-03-05 | |||
==III-V Plasma Asher== | |||
[[Image:III-V_asher.jpg|300x300px|thumb|Plasma asher for removing resist on III-V samples: positioned in A-5]] | |||
Diener Pico Plasma Asher for III-V materials. | |||
The user manual and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=186 LabManager] - '''requires login''' | |||
<br clear="all" /> | |||
--> | |||
==Plasma Asher 3: Descum== | |||
[[image:2017-03-15 13.12.45.jpg|350x350px|thumb|Plasma Asher 3: Descum is placed A-5]] | |||
The Plasma Asher 3: Descum dedicated for resist descum i.e. removal of remains resist traces after development. It has a small chamber, so you can only load one 4 inch substrate ad time or few smaller pieces. | |||
In this machine, only O2 and N2 gases are used for processes. | |||
The typical process parameters when operating the equipment: | |||
*Photeresist descum | |||
Pressure: 0.2 - 0.8mbar | |||
Gas: O2 | |||
Power: 50% - 100% | |||
Time: 1 -10 min., depending on photoresist type and thickness | |||
The other materials have not been tested yet. | |||
The user manual, user APV, and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=423 LabManager] - '''requires login''' | |||
===Process Information=== | |||
*[[Specific Process Knowledge/Lithography/Descum|Descum]] | |||
<br clear="all" /> | |||
<!-- TARAN 220-03-05 | |||
==III-V Plasma Asher== | |||
[[Image:III-V_asher.jpg|300x300px|thumb|Plasma asher for removing resist on III-V samples: positioned in A-5]] | |||
Diener Pico Plasma Asher for III-V materials. | |||
The user manual and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=186 LabManager] - '''requires login''' | |||
<br clear="all" /> | |||
--> | |||
=Resist Strip= | |||
[[Image:Resist_strip.jpg|300x300px|thumb|Resist strip bench in D-3]] | |||
This resist strip is only for wafers without metal and SU-8. | |||
There are one Remover 1165 bath for stripping and one IPA bath for rinsing. | |||
'''Here are the main rules for resist strip use:''' | |||
*Place the wafers in a wafer holder and put them in the first bath for 10 min, this time is depending how much resist you have on the surface. | |||
*After the strip rinse your wafers in the IPA bath for 2-3 min. | |||
*Rinse your wafers for 4-5 min. in running water after stripping. | |||
''' | The user manual and contact information can be found in LabManager: [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=385 Resist Strip] - '''requires login''' | ||
<br clear="all" /> | <br clear="all" /> | ||
=Overview of | ==Overview of wet bench 06 and 07== | ||
{| border=" | {|border="1" cellspacing="1" cellpadding="10" style="text-align:left;" | ||
! | |-style="background:silver; color:black" | ||
! Lift-off | | | ||
! [[Specific Process Knowledge/Lithography/Strip#Resist_Strip|Resist Strip]] | |||
! [[Specific Process Knowledge/Lithography/LiftOff#Lift-off_wet_bench_07|Lift-off]] | |||
|- | |- | ||
| | |||
| | |-style="background:whitesmoke; color:black" | ||
!General description''' | |||
| | |Wet stripping of resist | ||
|Lift-off process | |||
|- | |- | ||
| | |||
| | |-style="background:silver; color:black" | ||
| | !Chemical solution | ||
|NMP Remover 1165 | |||
|NMP Remover 1165 | |||
|- | |- | ||
|-style="background:whitesmoke; color:black" | |||
!Process temperature | |||
|Up to 65°C | |||
|Up to 65°C | |||
|- | |- | ||
| | |-style="background:silver; color:black" | ||
!Batch size | |||
| | | | ||
1-25 wafers | 1 - 25 wafers | ||
| | | | ||
1-25 | 1 - 25 wafers | ||
|- | |- | ||
| | |||
|-style="background:whitesmoke; color:black" | |||
!Size of substrate | |||
| | | | ||
*100 mm wafers | |||
*150 mm wafers | |||
| | | | ||
*100 mm wafers | |||
*150 mm wafers | |||
|- | |- | ||
| | |||
|-style="background:silver; color:black" | |||
!Allowed materials | |||
| | | | ||
*Silicon | *Silicon | ||
Line 292: | Line 392: | ||
*Silicon Nitride | *Silicon Nitride | ||
*Silicon Oxynitride | *Silicon Oxynitride | ||
| | | | ||
All metals except Type IV (Pb, Te) | |||
|- | |- | ||
|} | |} |
Latest revision as of 10:17, 18 March 2024
The contents on this page, including all images and pictures, was created by DTU Nanolab staff unless otherwise stated.
Feedback to this page: click here
Strip Comparison Table
Equipment | Plasma Asher 1 | Plasma Asher 2 | Plasma Asher 3: Descum | Resist strip | Lift-off | |
---|---|---|---|---|---|---|
Purpose |
All purposes |
Clean wafers only, no metal |
Resist descum |
Resist strip, no metal lift off |
Lift-off | |
Method |
Plasma ashing |
Plasma ashing |
Plasma ashing |
Solvent and ultra sound |
Solvent and ultra sound | |
Process parameters | Process gasses |
|
|
|
|
|
Max. process power |
|
|
|
|
| |
Solvent |
|
|
|
|
| |
Substrates | Batch size |
|
|
|
|
|
Allowed materials |
|
No metal allowed!
|
|
No metal allowed!
|
|
Plasma Ashing
Photoresist stripping | Descum after lithography | Surface treatment of plastic, ceramic and metal | Ashing of organic material | |
---|---|---|---|---|
Process pressure | 0.8- 1.2mbar | 0.5- 1.0mbar | 0.5- 1.0mbar | 0.8-1.5mbar |
Process gases |
|
|
O2, CF4, N2 or their mixtures | O2 |
Process power | 600-1000W | 150-300W | 150-300W | 1000W or less for heat- sensitive materials |
Process time | 5-60 minutes | 1-5 minutes | a few seconds to a few minutes | Between 0.5 and 20 hours, depending on the material |
Batch size | 1-30 | 1-10 | 1 wafer at a time | 1 wafer at a time, use a container, e.g Petri dish |
Typical process time for stripping in plasma asher 1 or 2:
- 1.5 µm AZ 5214E resist film: ~15 min
- 10 µm AZ 4562 resist film: ~45 min
Typical process parameters:
- O2: 400 ml/min
- N2: 70 ml/min
- Power: 1000 W
A typical descum process in plasma asher 1 or 2:
- O2: 70 ml/min
- N2: 70 ml/min
- Power: 150 W
- Time : 10 min
Be sure to wait for chamber to cool down to room temperature, before runinng descum processes in plasma asher 1 or 2. At a load of 2 Fused silica wafers, the amount of resist removed will be 10 - 1500 nm.
NB: Use dedicated descum asher Plasma Asher 3: Descum for descumming.
Plasma Asher 1
The Plasma Asher 1 (TePla 300 auto load model) can be used for the following process:
- Photoresist stripping
- Descumming
- Surface cleaning after storage
- Surface cleaning after processes using oil pump or diffusion pump vacuum
- Surface cleaning as part of photolithography after wet developing of lacquer structures prior to wet or plasma etching
- Stripping of photoresist layers after etching, including after being exposed to high temperatures as after implantation, ion etching, sputter etching, RIE
- Removal of organic passivation layers and masks
- Etching of glass and ceramic
- Etching of SiO, SiN, Si
- Removal of polyimide layers
The machine can be used for almost every materials, but if you have any doubt about your materials are compatible with the plasma process it is better to ask photolithography group at Nanolab.
The user manual, user APV, and contact information can be found in LabManager - requires login
Process Information
Plasma Asher 2
The Plasma Asher 2 is the same as Plasma Asher 1 but has another loading system which is more convenient for batch loading of 6inch substrates.
In this machine, only O2 and N2 gases are used for processes (in PlasmaAsher1, CF4 is used as well).
The typical process parameters when operating the equipment:
- Photeresist stripping
Pressure: 0.8 - 1.0 mbar
Gas: O2
Power: 600 - 1000 watts
Time: 5 -30 min., depending on photoresist type and thickness
A typical process time for stripping of 1.5 um AZ5214e resist is 25 min for 6 wafers load in a boat, recipe 18.
A Descum process in manual mode: O2:70, N2:70, power:150W, time:10 min
Be sure to wait for cooling if the mashine has been used at 1000W right before. At a load at 2 Fused silica wafers resist removed 0.01-01,5um
The other materials have not been tested yet.
The user manual, user APV, and contact information can be found in LabManager - requires login
Process Information
Plasma Asher 3: Descum
The Plasma Asher 3: Descum dedicated for resist descum i.e. removal of remains resist traces after development. It has a small chamber, so you can only load one 4 inch substrate ad time or few smaller pieces.
In this machine, only O2 and N2 gases are used for processes.
The typical process parameters when operating the equipment:
- Photeresist descum
Pressure: 0.2 - 0.8mbar Gas: O2 Power: 50% - 100% Time: 1 -10 min., depending on photoresist type and thickness
The other materials have not been tested yet.
The user manual, user APV, and contact information can be found in LabManager - requires login
Process Information
Resist Strip
This resist strip is only for wafers without metal and SU-8.
There are one Remover 1165 bath for stripping and one IPA bath for rinsing.
Here are the main rules for resist strip use:
- Place the wafers in a wafer holder and put them in the first bath for 10 min, this time is depending how much resist you have on the surface.
- After the strip rinse your wafers in the IPA bath for 2-3 min.
- Rinse your wafers for 4-5 min. in running water after stripping.
The user manual and contact information can be found in LabManager: Resist Strip - requires login
Overview of wet bench 06 and 07
Resist Strip | Lift-off | |
---|---|---|
General description | Wet stripping of resist | Lift-off process |
Chemical solution | NMP Remover 1165 | NMP Remover 1165 |
Process temperature | Up to 65°C | Up to 65°C |
Batch size |
1 - 25 wafers |
1 - 25 wafers |
Size of substrate |
|
|
Allowed materials |
|
All metals except Type IV (Pb, Te) |