Specific Process Knowledge/Thermal Process/Furnace: Multipurpose annealing: Difference between revisions

From LabAdviser
Mdyma (talk | contribs)
Pevo (talk | contribs)
No edit summary
 
(17 intermediate revisions by 5 users not shown)
Line 1: Line 1:
==From February 2024: RESIST PYROLYSIS FURNACE==


==Multipurpose annealing furnace==


'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dkSubject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Thermal_Process/Furnace:_Multipurpose_annealing#Multipurpose_annealing_furnace click here]'''
'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thermal_Process/Furnace:_Multipurpose_annealing#Multipurpose_annealing_furnace click here]'''
 
''This page is written by DTU Nanolab internal''
 


[[Category: Equipment |Thermal A2]]
[[Category: Equipment |Thermal A2]]
Line 8: Line 11:
[[Category: Furnaces|A2]]
[[Category: Furnaces|A2]]


==The ATV Furnace==
==The Multipurpose annealing furnace==
 
[[Image:ATV_ovn.jpg|thumb|365x365px|Multipurpose Annealing Furnace. Positioned in cleanroom B-1. Photo: DTU Nanolab internal]]
[[Image:ATV_ovn_boat.jpg|thumb|335x335px|Boat with wafers for the Multipurpose Annealing Furnace. Photo: DTU Nanolab internal]]


[[Image:ATV_ovn.jpg|thumb|365x365px|Multipurpose annealing furnace. Positioned in cleanroom B-1]]
The Multipurpose Annealing Furnace it made by ATV Technologie, and it was installed in the cleanroom in 2015.  
[[Image:ATV_ovn_boat.jpg|thumb|335x335px|Boat with wafer for the multipurpose annealing furnace.]]


The Multipurpose annealing furnace it made by the company ATV Technologie, and it was installed in the cleanroom in 2015.  
The purpose of the Multipurpose Annealing Furnace is annealing and dry oxidation of different samples and resist pyrolysis. Annealing and resist pyrolysis can be done in vacuum or at atmospheric pressure, in a N<sub>2</sub> or H<sub>2</sub> atmosphere or a mixture of the two gasses.  


The purpose of the Multipurpose annealing furnace is annealing and dry oxidation of different samples and resist pyrolysis. Annealling and resist pyrolysis can be done in vaccum or at atmospheric pressure, in a N<sub>2</sub>, H<sub>2</sub> or a mixture of the two gasses.  
All process gasses (except purge nitrogen) are heated, before they are introduced into the furnace at the door side.


Is is possible to change all quartz ware in the furnace (the furnace tube, the door sealing and the wafer boat). A the moment Danchip is has three different sets of quartz ware:
Is is possible to change all quartz ware in the furnace (the furnace tube, the door sealing and the wafer boat). At the moment Nanolab has two different sets of quartz ware:


*Clean: Dedicated for clean samples that have been RCA cleaned
*Metal: Dedicated for different samples that cannot be RCA cleaned. Also samples with metals are allowed in the furnace, when this quartz set is mounted
*Metal: Dedicated for different samples that cannot be RCA cleaned. Also samples with metals are allowed in the furnace, when this quartz set is mounted
*Resist pyrolysis: Dedicated for resist pyrolysis.  
*Resist pyrolysis: Dedicated for resist pyrolysis.  


Please note that all new materials have to be approved by the Thin Film group (thinfilm@danchip.dtu.dk) before they are allowed in the furnace.  
Please note that all new materials have to be approved by the Thin Film group (thinfilm@nanolab.dtu.dk) before they are allowed in the furnace.
 
The furnace tube is heated by use of 12 long heaters situated along the furnace tube and combined in three groups (top, bottom left and bottom right) and two flat heaters situated in the ends of the furnace tube. The this way the temperature will be very uniform everywhere in the furnace tube. The heating can be done very fast, up to 30 <sup>o</sup>C/min. For atmospheric pressure processes the maximum temperature is 1100 <sup>o</sup>C, and for vacuum processes the maximum temperature is 1050 <sup>o</sup>C.  


The furnace tube is heated by use on 12 long heaters situated along the furnace tube and two flat heaters situated in the ends of the furnace tube. The this way the temperature will be very uniform everywhere in the furnace tube. The heating can be done very fast, up to 30 <sup>o</sup>C/min. For atmospheric pressure processes the maximum temperature is 1100 <sup>o</sup>C, and for vacuum processes the maximum temperature is 1050 <sup>o</sup>C. Cooling is done (rather slowly) by use of cooling fans.
The furnace body surrounding the furnace tube consists of a top and bottom half-shell. To cool down the furnace (when the temperature is below 800 <sup>o</sup>C), the top half shelf can be lifted up, and cooling fans will then flow air from the surroundings around the furnace tube to cool it down. However, for safety reasons, the cooling fans will not the activated when there is hydrogen in the furnace, and cooling will then be very slow.
 
It is not possible to open the furnace when the temperature is above 300 <sup>o</sup>C.


For resist pyrolysis, samples with different resist layers are heated up to maximum 1100 <sup>o</sup>C in a nitrogen atmosphere. At high temperatures carbon is formed by pyrolysis of the resist. In this way conductive structures can be made from a resist patterned sample. If oxygen from the air or from outgassing of the resist is present in the furnace, the resist layer will be removed, thus it is important to evacuate the furnace and flush it with nitrogen, before a high temperature for resist pyrolysis is obtained. Pyrolysis of a large amount of resist may also be a problem due to resist outgassing.  
For resist pyrolysis, samples with different resist layers are heated up to maximum 1100 <sup>o</sup>C in a nitrogen atmosphere. At high temperatures carbon is formed by pyrolysis of the resist. In this way conductive structures can be made from a resist patterned sample. If oxygen from the air or from outgassing of the resist is present in the furnace, the resist layer will be removed, thus it is important to evacuate the furnace and flush it with nitrogen, before a high temperature for resist pyrolysis is obtained. Pyrolysis of a large amount of resist may also be a problem due to resist outgassing.  
Line 32: Line 40:
'''The user manual, technical information and contact information can be found in LabManager:'''
'''The user manual, technical information and contact information can be found in LabManager:'''


'''[http://labmanager.dtu.dk/function.php?module=Machine&view=view&page_id=169 Furnace: Multipurpose annealing]'''
'''[http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=340 Furnace: Multipurpose annealing]'''
 


==Process information==
==Process information==
*Oxidation: look at the [[Specific Process Knowledge/Thermal Process/Oxidation|Oxidation]] page
*Oxidation: look at the [[Specific Process Knowledge/Thermal Process/Oxidation|Oxidation]] page
*Annealing: look at the [[Specific Process Knowledge/Thermal Process/Annealing|Annealing]] page
*Annealing: look at the [[Specific Process Knowledge/Thermal Process/Annealing|Annealing]] page
*[[Specific_Process_Knowledge/Thermal_Process/Furnace:_Multipurpose_annealing/Acceptance test|Results from the Multipurpose Anneal Furnace acceptance test]]
*[[Specific_Process_Knowledge/Thermal_Process/Pyrolysis/Pyrolysis_with_Multipurpose_Anneal_Furnace|Pyrolysis]]


==Overview of the performance of the ATV furnace and process related parameters==
==Overview of the performance of the ATV furnace and process related parameters==
Line 52: Line 63:
|style="background:LightGrey; color:black"|Film thickness
|style="background:LightGrey; color:black"|Film thickness
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Dry oxidation: 50 Å  to ~200 nm SiO<sub>2</sub> (it takes too long to grow a thicker layer)
*Dry oxidation: 50 Å  to ~200 nm SiO<sub>2</sub> (it takes too long to grow a thicker oxide layer)
|-
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter range
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter range
Line 70: Line 81:
*O<sub>2</sub>: 10 slm
*O<sub>2</sub>: 10 slm
*H<sub>2</sub>: 5 slm (max 2 slm for vacuum processes)
*H<sub>2</sub>: 5 slm (max 2 slm for vacuum processes)
*N<sub>2</sub>-H<sub>2</sub> mix: 10 slm
*N<sub>2</sub> mix : 10 slm (for H<sub>2</sub>-N<sub>2</sub> gas mixture)
|-
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Substrates
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Substrates
Line 77: Line 88:
*1-30 50 mm, 100 mm or 150 mm wafers per run
*1-30 50 mm, 100 mm or 150 mm wafers per run
*1-50 200 mm wafers per run (not possible with all quartz sets)
*1-50 200 mm wafers per run (not possible with all quartz sets)
*Smaller samples (placed in a Si carrier wafer)
*Smaller samples (placed on Si carrier wafers)
|-
|-
|style="background:LightGrey; color:black"|Substrate materials allowed
|style="background:LightGrey; color:black"|Substrate materials allowed

Latest revision as of 14:16, 19 February 2024

From February 2024: RESIST PYROLYSIS FURNACE

Feedback to this page: click here

This page is written by DTU Nanolab internal

The Multipurpose annealing furnace

Multipurpose Annealing Furnace. Positioned in cleanroom B-1. Photo: DTU Nanolab internal
Boat with wafers for the Multipurpose Annealing Furnace. Photo: DTU Nanolab internal

The Multipurpose Annealing Furnace it made by ATV Technologie, and it was installed in the cleanroom in 2015.

The purpose of the Multipurpose Annealing Furnace is annealing and dry oxidation of different samples and resist pyrolysis. Annealing and resist pyrolysis can be done in vacuum or at atmospheric pressure, in a N2 or H2 atmosphere or a mixture of the two gasses.

All process gasses (except purge nitrogen) are heated, before they are introduced into the furnace at the door side.

Is is possible to change all quartz ware in the furnace (the furnace tube, the door sealing and the wafer boat). At the moment Nanolab has two different sets of quartz ware:

  • Metal: Dedicated for different samples that cannot be RCA cleaned. Also samples with metals are allowed in the furnace, when this quartz set is mounted
  • Resist pyrolysis: Dedicated for resist pyrolysis.

Please note that all new materials have to be approved by the Thin Film group (thinfilm@nanolab.dtu.dk) before they are allowed in the furnace.

The furnace tube is heated by use of 12 long heaters situated along the furnace tube and combined in three groups (top, bottom left and bottom right) and two flat heaters situated in the ends of the furnace tube. The this way the temperature will be very uniform everywhere in the furnace tube. The heating can be done very fast, up to 30 oC/min. For atmospheric pressure processes the maximum temperature is 1100 oC, and for vacuum processes the maximum temperature is 1050 oC.

The furnace body surrounding the furnace tube consists of a top and bottom half-shell. To cool down the furnace (when the temperature is below 800 oC), the top half shelf can be lifted up, and cooling fans will then flow air from the surroundings around the furnace tube to cool it down. However, for safety reasons, the cooling fans will not the activated when there is hydrogen in the furnace, and cooling will then be very slow.

It is not possible to open the furnace when the temperature is above 300 oC.

For resist pyrolysis, samples with different resist layers are heated up to maximum 1100 oC in a nitrogen atmosphere. At high temperatures carbon is formed by pyrolysis of the resist. In this way conductive structures can be made from a resist patterned sample. If oxygen from the air or from outgassing of the resist is present in the furnace, the resist layer will be removed, thus it is important to evacuate the furnace and flush it with nitrogen, before a high temperature for resist pyrolysis is obtained. Pyrolysis of a large amount of resist may also be a problem due to resist outgassing.


The user manual, technical information and contact information can be found in LabManager:

Furnace: Multipurpose annealing


Process information

Overview of the performance of the ATV furnace and process related parameters

Purpose
  • Dry oxidation of silicon
  • Annealing in N2, H2 or a mixture of the two gasses
  • Pyrolysis of different resists
Performance Film thickness
  • Dry oxidation: 50 Å to ~200 nm SiO2 (it takes too long to grow a thicker oxide layer)
Process parameter range Process Temperature
  • No vacuum: 25 oC - 1100 oC
  • Vacuum: 25 oC - 1050 oC
Process pressure
  • 1 atm
  • Vacuum down to ~0.1 mbar (depends on gas flow)
Gasses on the system
  • N2: 20 slm
  • O2: 10 slm
  • H2: 5 slm (max 2 slm for vacuum processes)
  • N2 mix : 10 slm (for H2-N2 gas mixture)
Substrates Batch size
  • 1-30 50 mm, 100 mm or 150 mm wafers per run
  • 1-50 200 mm wafers per run (not possible with all quartz sets)
  • Smaller samples (placed on Si carrier wafers)
Substrate materials allowed
  • Depends on the quartz set