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[[Category: Equipment |Etch DRIE]]
[[Category: Equipment |Etch DRIE]]
[[Category: Etch (Dry) Equipment|DRIE]]
[[Category: Etch (Dry) Equipment|DRIE]]
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=<span style="background:#FF2800">THIS PAGE IS UNDER CONSTRUCTION</span>[[image:Under_construction.png|200px]]=


==Etching of silicon rich nitride (SRN) with recipes developed for SiO2 etching==
==Etching of silicon rich nitride (SRN) with recipes developed for SiO2 etching==
 
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!Parameter
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{| border="2" cellspacing="2" cellpadding="3"
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!Typical results
!Measured results
!'''SiO2_res_10'''
!'''SiO2_res_10'''
!'''DOE2/Post_II_21'''
!'''DOE2/Post_II_21'''
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|Etch rate of Mir resist
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===Etch rate uniformity===
===Etch rate uniformity===
<gallery caption="SRN etch uniformity with recipes optimized for SiO2 etching" widths="400px" heights="250px" perrow="2">
<gallery caption="SRN (LPCVD) etch uniformity with recipes optimized for SiO2 etching tested on unpatterned wafers" widths="400px" heights="250px" perrow="2">
File:SRN etch uniformity SiO2_res_10.jpg
File:SRN etch uniformity SiO2_res_10.jpg
File:SRN etch uniformity DOE2_Post_II_21.jpg
File:SRN etch uniformity DOE2_Post_II_21.jpg
</gallery>
</gallery>
====Adding electromagnets (EM) to see if that could improve the uniformity====
Recipe used: SiO2_res_10<br>
[[File:Contour Plot SNR_a06 EM_02_30 white to blue.jpg|400px|left|thumb|SRN etch with SiO2_res and EM:02/30. The electromagnets did not change much. Average etch rate: 166.5 nm/min +-12% ]]
[[File:Contour Plot SNR_a12 etch rate.jpg|400px|left|thumb|SRN etch with SiO2_res and EM:10/0. The outer coil just seems to make it worse. Average etch rate: 114 nm/min +-60% ]]
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