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Created page with "==Etching of silicon rich nitride (SRN) with recipes developed for SiO2 etching=="
 
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'''Feedback to this page:
[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Etch/DRIE-Pegasus/Pegasus-4/Nitride_Etch click here]'''
[[Category: Equipment |Etch DRIE]]
[[Category: Etch (Dry) Equipment|DRIE]]
<br> {{CC-bghe1}}
==Etching of silicon rich nitride (SRN) with recipes developed for SiO2 etching==
==Etching of silicon rich nitride (SRN) with recipes developed for SiO2 etching==
{{CC-bghe2}}<br>
{| border="2" cellspacing="2" cellpadding="3"
!Parameter
|Recipe name: '''SiO2_res_10'''
|Recipe name: '''DOE2/Post_II_21'''
 
|-
|Coil Power [W]
|2500
|3840
|-
|Platen Power [W]
|300
|300
|-
|Platen temperature [<sup>o</sup>C]
|20
|20
|-
|H2 flow [sccm]
|25.6
|0
|-
|He flow [sccm]
|448.7
|0
|-
|C<sub>4</sub>F<sub>8</sub> flow [sccm]
|25.6
|30
|-
|Pressure [mTorr]
|8.8
|0.9
|-
|}
{| border="2" cellspacing="2" cellpadding="3"
!Measured results
!'''SiO2_res_10'''
!'''DOE2/Post_II_21'''
|-
|Average etch of SRN on 6" wafer
|166 nm/min [+- 17% over a 6" wafer]'''
|142 nm/min [+- 9% over a 6" wafer]'''
|-
|Etch rate of Si3N4
|?
|?
|-
|Etch rate of SiO2
|250 nm/min [+- 3% over a 6" wafer]
|306 nm/min [on small piece]
|-
|Etch rate in Si
|?nm/min
|? nm/min
|-
|Etch rate of Mir resist
|'''? nm/min
|'''? nm/min
|-
|}
===Etch rate uniformity===
<gallery caption="SRN (LPCVD) etch uniformity with recipes optimized for SiO2 etching tested on unpatterned wafers" widths="400px" heights="250px" perrow="2">
File:SRN etch uniformity SiO2_res_10.jpg
File:SRN etch uniformity DOE2_Post_II_21.jpg
</gallery>
====Adding electromagnets (EM) to see if that could improve the uniformity====
Recipe used: SiO2_res_10<br>
[[File:Contour Plot SNR_a06 EM_02_30 white to blue.jpg|400px|left|thumb|SRN etch with SiO2_res and EM:02/30. The electromagnets did not change much. Average etch rate: 166.5 nm/min +-12% ]]
[[File:Contour Plot SNR_a12 etch rate.jpg|400px|left|thumb|SRN etch with SiO2_res and EM:10/0. The outer coil just seems to make it worse. Average etch rate: 114 nm/min +-60% ]]
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