[[Image:stepper_image_1.jpg|300x300px|right|thumb|DUV Stepper is placed in F-3]]
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[[Category: Equipment|Lithography exposure]]
[[Category: Lithography|Exposure]]
The deep-UV stepper FPA-3000EX4 from Canon is an advanced exposure system designed for mass-production of 6 and 8 inch wafers/ devices having a throughput of up to 90 wafers per hour. The largest applicable thickness of the wafers/ devices is 1,2 mm. Also 4" wafers/ devices can be processed with some restrictions concerning throughput, resolution, uniformity and maximum allowed wafer thickness. The system is equipped with a KrF Excimer laser from Cymer (wavelength 248 nm). Its projection lens’ NA is variable over a range between 0,4 and 0,6. Additionally, the partial coherence factor (σ) of the illumination system can be adjusted and different off-axis illumination modes can be selected.
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The critical dimension (CD) of patterns that can be realized is specified at around 250nm for arbitrary formed patterns in the standard illumination mode (NA=0,6; σ =0,65). However, the best achievable resolution is different for each pattern type, pattern shape and pitch. So linewidths down to 160 nm could be achieved for geometrically simple patterns or pattern arrays (single and multiple line or pin-hole structures).
{{:Specific Process Knowledge/Lithography/Coaters/GammaDUV}}
{{:Specific Process Knowledge/Lithography/DUVStepperLithography/DUVStepper}}
'''The user manual(s), quality control procedure(s) and results and contact information can be found in LabManager:'''
{{:Specific Process Knowledge/Lithography/Development/DUV_developer}}
Equipment info in [http://labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=273 LabManager]
== Process information ==
*[[/Optimization and Simulation|Optimization and Simulation]]
*[[/Reticle Design|Reticle Design]]
*[[/Process Instructions|Process Instructions]]
== Equipment performance and process related parameters ==
[[Image:Gamma_2M.jpg|300x300px|right|thumb|The SÜSS Spinner-Stepper is placed in F-3]]
'''Feedback to this section''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php?title=Specific_Process_Knowledge/Lithography/DUVStepperLithography#S.C3.9CSS_Spinner-Stepper click here]'''
This spinner is dedicated for spinning DUV resists. The spinner is fully automatic and can run up to 25 substrates in a batch 4", 6", and 8" size. The machine is equipped with the 3 resist lines, an automatic syringe system and a solvent line for cleaning and back-side rinse.
'''The user manual(s), quality control procedure(s) and results and contact information can be found in LabManager:'''
Equipment info in [http://labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=279 LabManager]
==Process information==
The spinning process will be performed by the customer together with the Photolith group of Danchip. In case you would like to do DUV lithography please contact Lithography team, who will consult you and run your wafers together with you.
Information about resist can be found here:
* Bottom Anti Reflection Coating (BARC) [http://www.brewerscience.com/products/arc/dry-etch-arc-coatings/248nm-products/duv42s DUV 42S-6 ].
[[Image:SUSS_DEV.JPG|300x300px|right|thumb|The Developer-TMAH-Stepper is placed in F-3]]
'''Feedback to this section''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php?title=Specific_Process_Knowledge/Lithography/DUVStepperLithography#Developer_TMAH_Stepper click here]'''
This developer is dedicated for development of DUV resists. The developer is fully automatic and can run up to 25 substrates in a batch 4", 6", and 8" size (8" requires tool change). The machine is equipped with 1 developer line, in our case 2,38% TMAH in water (AZ 726 MIF), 1 topside rinse line with water, 1 backside rinse line with water and 1 N2 line for drying.
'''The user manual(s), quality control procedure(s) and results and contact information can be found in LabManager:'''
Equipment info in [http://labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=328 LabManager]
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==Process information==
[[Image:140 250 nm tilt22 (1).jpg|350x350px|right|thumb|The SEM picture of 250nm pillors and lines. Exposure dose is 140 J/m2.]]
The spinning process will be performed by the customer together with the Photolith group of Danchip. In case you would like to do DUV lithography please contact Lithography team, who will consult you and run your wafers together with you.
Here you can find a [[media:250nm_ines_and_pillars_after_developing_i_60sec.pdf| chart]] demonstrating a dependence between 250nm line width/pillors diameter and exposure dose.
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== Equipment performance and process related parameters ==
This spinner is dedicated for spinning DUV resists. The spinner is fully automatic and can run up to 25 substrates in a batch 4", 6", and 8" size (8" requires tool change). The machine is equipped with the 3 resist lines (DUV42S-6, KRF M230Y, and KRF M35G), as well as a syringe dispense system.
The user manual, quality control procedures and results, user APVs, and contact information can be found in LabManager:
The spinning process will be performed by the customer together with the Photolith group of Nanolab. In case you would like to do DUV lithography please contact Lithography team, who will consult you and run your wafers together with you.
The deep-UV stepper FPA-3000EX4 from Canon is an advanced exposure system designed for mass-production of 6 and 8 inch wafers/ devices having a throughput of up to 90 wafers per hour. The largest applicable thickness of the wafers/ devices is 1,2 mm. Also 4" wafers/ devices can be processed with some restrictions concerning throughput, resolution, uniformity and maximum allowed wafer thickness. The system is equipped with a KrF Excimer laser from Cymer (wavelength 248 nm). Its projection lens’ NA is variable over a range between 0,4 and 0,6. Additionally, the partial coherence factor (σ) of the illumination system can be adjusted and different off-axis illumination modes can be selected.
The critical dimension (CD) of patterns that can be realized is specified at around 250nm for arbitrary formed patterns in the standard illumination mode (NA=0,6; σ =0,65). However, the best achievable resolution is different for each pattern type, pattern shape and pitch. So linewidths down to 160 nm could be achieved for geometrically simple patterns or pattern arrays (single and multiple line or pin-hole structures).
The user manual(s), quality control procedure(s) and results and contact information can be found in LabManager:
Equipment info in LabManager
Equipment performance and process related parameters
Purpose
Exposure system designed for mass/production of devices with linewidth down to 250nm
Specifications
Magnification
1:5
Projection lens Numerical Aperture
0,4 - 0,60
Illumination system's σ
0,2 - 0,75 (standard illumination mode: σ = 0,65)
Exposure source
KrF laser
Wavelength
248nm
Illumination intensity
2800 W/m2
Illumination uniformity
1,2%
Maximum printed field size
22 x 26 mm (maximum on wafer)
Alignment accuracy
3 sigma = 50 nm
Substrates
Substrate size
100 mm wafers (in trays)
150 mm wafers
200 mm wafers (requires tool change)
Allowed materials
Any standard cleanroom material
Batch
1 - 25
Developer: TMAH Stepper
This developer is dedicated for development of DUV resists. The developer is fully automatic and can run up to 25 substrates in a batch 4", 6", and 8" size (8" requires tool change). The machine is equipped with 1 developer line, in our case 2,38% TMAH in water (AZ 726 MIF), 1 topside rinse line with water, 1 backside rinse line with water and 1 N2 line for drying.
The user manual and contact information can be found in LabManager - requires login
Process information
The development process will be performed by the customer together with the Photolith group of DTU Nanolab. In case you would like to do DUV lithography please contact Lithography team, who will consult you and run your wafers together with you.
Here you can find a chart demonstrating a dependence between 250 nm line width/pillars diameter and exposure dose.