[[Image:stepper_image_1.jpg|300x300px|right|thumb|DUV Stepper is placed in F-3]]
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[[Category: Equipment|Lithography exposure]]
[[Category: Lithography|Exposure]]
The FPA-3000EX4 from Canon is an advanced exposure system designed for mass-production of 6 and 8 inch large wafers/ devices. The largest applicable thickness of the wafers/ devices is 1,2 mm. Also 4" wafers/ devices can be processed with some restrictions concerning throughput, resolution, uniformity and maximum allowed wafer thickness. The system is equipped with a KrF Excimer laser from Cymer (wavelength 248 nm) leading to a specified resolution of 250 nm that is improved when well-defined pattern designs are used. The best resolution could be achieved with single line structures (line widths down to 160 nm) and multi-line structures (line widths down to 180 nm).
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{{:Specific Process Knowledge/Lithography/Coaters/GammaDUV}}
'''The user manual(s), quality control procedure(s) and results and contact information can be found in LabManager:'''
{{:Specific Process Knowledge/Lithography/DUVStepperLithography/DUVStepper}}
Equipment info in [http://labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=273 LabManager]
== Process information ==
{{:Specific Process Knowledge/Lithography/Development/DUV_developer}}
*A DUV reticle is needed that should be designed by the customer. Please note that the projection magnification of the stepper is 1:5, so that the dimensions of the pattern on the reticle are expanded by a factor 5 with respect to those printed on the wafer.
The whole reticle can be regarded as one chip that might be printed one time onto the wafer or repeatedly - step-by-step - in a two dimensional array. Alternatively, different chips can be placed onto the reticle, separated by frames. These chips can be printed individually onto the wafer either as one chip or as an array. Then the individual chips of the design have to be surrounded by frames. Additionally, the pattern of two different reticles can be combined on one wafer.
If the pattern of the reticle should be aligned to another one - that is already located on the wafer - the wafer needs to be equipped with several alignment marks. A guide for preparing reticle files for the Canon FPA-3000EX4 stepper, having the correct dimensions and positions of the individual patterns, frames and alignment marks can be found here: [[File:Canon_Stepper_Reticle_Guide_v0_03.pdf]].
Usually the reticle is fabricated by an external company. It is recommended to send the mask design in GDS format to the Photolith group of Danchip, so that they can verify the mask design and order the mask.
*The SÜSS Spinner-Stepper is dedicated for spinning DUV resists. Please note that a Bottom Anti-Reflective Coating (BARC) is necessary to guarantee high quality of both the resist film and the exposure. Please find the specification of the SÜSS Spinner-Stepper in the LabAdviser [[http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/DUVStepperLithography#SÜSS Spinner-Stepper]].
*Usually, in order to guarantee the highest fidelity of the produced pattern on the wafer the best suitable exposure dose has to be evaluated for each individual pattern, resist type and resist thickness. Thus it is recommended to perform an exposure dose test as a first test, when a new reticle is used. After evaluation by SEM the identified dose - that leads to the most accurate pattern - can be applied in the DUV process for the required wafers.
* The DUV process - including BARC and resist spinning, exposure, post exposure bake and development - will be performed by the customer together with the Photolith group of Danchip. Any kind of inspection, evaluation and pre- and post-processing should be performed by the customer.
== Equipment performance and process related parameters ==
[[Image:Gamma_2M.jpg|300x300px|right|thumb|The SÜSS Spinner-Stepper is placed in F-3]]
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This spinner is dedicated for spinning DUV resists. The spinner is fully automatic and can run up to 25 substrates in a batch 4", 6", and 8" size. The machine is equipped with the 3 resist lines, an automatic syringe system and a solvent line for cleaning and back-side rinse.
'''The user manual(s), quality control procedure(s) and results and contact information can be found in LabManager:'''
Equipment info in [http://labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=279 LabManager]
==Process information==
The users are not allowed to use the spinner. In case you would like to do DUV lithography please contact Lithography team, who will consult you and run your wafers for you.
Information about resist can be found here:
* Bottom Anti Reflection Coating (BARC) [http://www.brewerscience.com/products/arc/dry-etch-arc-coatings/248nm-products/duv42s DUV 42S-6 ].
[[Image:SUSS_DEV.JPG|300x300px|right|thumb|The Developer-TMAH-Stepper is placed in F-3]]
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This developer is dedicated for development of DUV resists. The developer is fully automatic and can run up to 25 substrates in a batch 4", 6", and 8" size. The machine is equipped with 1 developer line, in our case in 2,38% water based TMAH, 1 topside rinse line with water, 1 backside rinse line with water and 1 N2 line for drying.
'''The user manual(s), quality control procedure(s) and results and contact information can be found in LabManager:'''
Equipment info in [http://labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=328 LabManager]
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==Process information==
[[Image:140 250 nm tilt22 (1).jpg|350x350px|right|thumb|The SEM picture of 250nm pillors and lines. Exposure dose is 140 J/m2.]]
The users are not allowed to use the developer. In case you would like to do DUV lithography please contact Lithography team, who will consult you and run your wafers for you.
We have observed that using automatic developing we can decrease the exposure dose for resolve the 250nm pillors structures comparing to dose needed for resolve the line the same size.
Here you can find a [[media:250nm_ines_and_pillars_after_developing_i_60sec.pdf| chart]] demonstrating a dependence between 250nm line width/pillors diameter and exposure dose.
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== Equipment performance and process related parameters ==
This spinner is dedicated for spinning DUV resists. The spinner is fully automatic and can run up to 25 substrates in a batch 4", 6", and 8" size (8" requires tool change). The machine is equipped with the 3 resist lines (DUV42S-6, KRF M230Y, and KRF M35G), as well as a syringe dispense system.
The user manual, quality control procedures and results, user APVs, and contact information can be found in LabManager:
The spinning process will be performed by the customer together with the Photolith group of Nanolab. In case you would like to do DUV lithography please contact Lithography team, who will consult you and run your wafers together with you.
The deep-UV stepper FPA-3000EX4 from Canon is an advanced exposure system designed for mass-production of 6 and 8 inch wafers/ devices having a throughput of up to 90 wafers per hour. The largest applicable thickness of the wafers/ devices is 1,2 mm. Also 4" wafers/ devices can be processed with some restrictions concerning throughput, resolution, uniformity and maximum allowed wafer thickness. The system is equipped with a KrF Excimer laser from Cymer (wavelength 248 nm). Its projection lens’ NA is variable over a range between 0,4 and 0,6. Additionally, the partial coherence factor (σ) of the illumination system can be adjusted and different off-axis illumination modes can be selected.
The critical dimension (CD) of patterns that can be realized is specified at around 250nm for arbitrary formed patterns in the standard illumination mode (NA=0,6; σ =0,65). However, the best achievable resolution is different for each pattern type, pattern shape and pitch. So linewidths down to 160 nm could be achieved for geometrically simple patterns or pattern arrays (single and multiple line or pin-hole structures).
The user manual(s), quality control procedure(s) and results and contact information can be found in LabManager:
Equipment info in LabManager
Equipment performance and process related parameters
Purpose
Exposure system designed for mass/production of devices with linewidth down to 250nm
Specifications
Magnification
1:5
Projection lens Numerical Aperture
0,4 - 0,60
Illumination system's σ
0,2 - 0,75 (standard illumination mode: σ = 0,65)
Exposure source
KrF laser
Wavelength
248nm
Illumination intensity
2800 W/m2
Illumination uniformity
1,2%
Maximum printed field size
22 x 26 mm (maximum on wafer)
Alignment accuracy
3 sigma = 50 nm
Substrates
Substrate size
100 mm wafers (in trays)
150 mm wafers
200 mm wafers (requires tool change)
Allowed materials
Any standard cleanroom material
Batch
1 - 25
Developer: TMAH Stepper
The Developer-TMAH-Stepper is placed in F-3
This developer is dedicated for development of DUV resists. The developer is fully automatic and can run up to 25 substrates in a batch 4", 6", and 8" size (8" requires tool change). The machine is equipped with 1 developer line, in our case 2,38% TMAH in water (AZ 726 MIF), 1 topside rinse line with water, 1 backside rinse line with water and 1 N2 line for drying.
The user manual and contact information can be found in LabManager - requires login
Process information
The SEM picture of 250 nm pillars and lines. Exposure dose is 140 J/m2.
The development process will be performed by the customer together with the Photolith group of DTU Nanolab. In case you would like to do DUV lithography please contact Lithography team, who will consult you and run your wafers together with you.
Here you can find a chart demonstrating a dependence between 250 nm line width/pillars diameter and exposure dose.
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