Specific Process Knowledge/Lithography/DUVStepperLithography: Difference between revisions

Latest revision as of 13:44, 10 May 2023

The contents on this page, including all images and pictures, was created by DTU Nanolab staff unless otherwise stated.

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Spin coater: Süss stepper

This spinner is dedicated for spinning DUV resists. The spinner is fully automatic and can run up to 25 substrates in a batch 4", 6", and 8" size (8" requires tool change). The machine is equipped with the 3 resist lines (DUV42S-6, KRF M230Y, and KRF M35G), as well as a syringe dispense system.

The user manual, quality control procedures and results, user APVs, and contact information can be found in LabManager:

Equipment info in LabManager - requires login

DUV resist overview

The spinning process will be performed by the customer together with the Photolith group of Nanolab. In case you would like to do DUV lithography please contact Lithography team, who will consult you and run your wafers together with you.

Bottom Anti Reflection Coating (BARC):

Manufacturers website: DUV 42S-6
Datasheet: DUV42S-6 - requires login

Positive DUV resist for spin coating in 600-300nm thickness range:

Manufacturers website: KrF M230Y
Datasheet: KrF M230Y - requires login

Positive DUV resist for spin coating in 1600-800nm thickness range:

Manufacturers website: KrF M35G
Datasheet: KrF M35G - requires login

Negative DUV resist for spin coating in 1400-800nm or diluted with EC Solvent in 1:1 in 400-200nm thickness range:

Manufacturers website: UVN2300-0.8
Datasheet: UVN2300-0.8 - requires login

Process information

Equipment performance and process related parameters

Purpose		Spin coating and soft baking of BARC Spin coating and soft baking of DUV resists Post exposure baking
Resist		BARC DUV42S-6 Positive tone resist KRF M230Y Positive tone resist KRF M35G Negative tone resist UVN2300-0.8
Performance	Coating thickness	BARC DUV42S-6 60-90nm Positive tone resist KRF M230Y 300-600nm Positive tone resist KRF M35G 800-1600nm Negative tone resist UVN2300-0.8 200-1400nm
Process parameters	Spin speed	10 - 5000 rpm
	Spin acceleration	100 - 10000 rpm/s
	Hotplate temperature	175°C for BARC baking 130°C for positive tone resist soft baking and post exposure baking 100°C for negative tone resist soft baking and post exposure baking
Substrates	Substrate size	100 mm wafers 150 mm wafers 200 mm wafers (requires tool change)
	Allowed materials	Any standard cleanroom material
	Batch	1 - 25

DUV Stepper

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The deep-UV stepper FPA-3000EX4 from Canon is an advanced exposure system designed for mass-production of 6 and 8 inch wafers/ devices having a throughput of up to 90 wafers per hour. The largest applicable thickness of the wafers/ devices is 1,2 mm. Also 4" wafers/ devices can be processed with some restrictions concerning throughput, resolution, uniformity and maximum allowed wafer thickness. The system is equipped with a KrF Excimer laser from Cymer (wavelength 248 nm). Its projection lens’ NA is variable over a range between 0,4 and 0,6. Additionally, the partial coherence factor (σ) of the illumination system can be adjusted and different off-axis illumination modes can be selected.

The critical dimension (CD) of patterns that can be realized is specified at around 250nm for arbitrary formed patterns in the standard illumination mode (NA=0,6; σ =0,65). However, the best achievable resolution is different for each pattern type, pattern shape and pitch. So linewidths down to 160 nm could be achieved for geometrically simple patterns or pattern arrays (single and multiple line or pin-hole structures).

The user manual(s), quality control procedure(s) and results and contact information can be found in LabManager: Equipment info in LabManager

Process information

Equipment performance and process related parameters

Purpose		Exposure system designed for mass/production of devices with linewidth down to 250nm
Specifications	Magnification	1:5
	Projection lens Numerical Aperture	0,4 - 0,60
	Illumination system's σ	0,2 - 0,75 (standard illumination mode: σ = 0,65)
	Exposure source	KrF laser
	Wavelength	248nm
	Illumination intensity	2800 W/m²
	Illumination uniformity	1,2%
	Maximum printed field size	22 x 26 mm (maximum on wafer)
	Alignment accuracy	3 sigma = 50 nm
Substrates	Substrate size	100 mm wafers (in trays) 150 mm wafers 200 mm wafers (requires tool change)
	Allowed materials	Any standard cleanroom material
	Batch	1 - 25

Developer: TMAH Stepper

This developer is dedicated for development of DUV resists. The developer is fully automatic and can run up to 25 substrates in a batch 4", 6", and 8" size (8" requires tool change). The machine is equipped with 1 developer line, in our case 2,38% TMAH in water (AZ 726 MIF), 1 topside rinse line with water, 1 backside rinse line with water and 1 N2 line for drying.

The user manual and contact information can be found in LabManager - requires login

Process information

The development process will be performed by the customer together with the Photolith group of DTU Nanolab. In case you would like to do DUV lithography please contact Lithography team, who will consult you and run your wafers together with you.

Here you can find a chart‎ demonstrating a dependence between 250 nm line width/pillars diameter and exposure dose.

Standard processes

Post-exposure bake sequences:

(1000) DCH PEB 130C 60s 60s baking at 130°C; 20s cooling
(1001) DCH PEB 130C 90s 90s baking at 130°C; 20s cooling

Development sequences:

(1004) DCH DEV 60s 60s single puddle development

Combined PEB and development sequences:

(1002) DCH PEB_60s and DEV_60s 60s baking at 130°C followed by 60s single puddle development
(1003) DCH PEB_90s and DEV_60s 90s baking at 130°C followed by 60s single puddle development

The standard developer process consists of:

pre-wetting with water (2.5s @ 1000rpm)
developer dispense (2.5s @ 40rpm, corresponding to ~9ml)
development (60s @ 0rpm)
water rinse with BSR (5s @ 3000rpm)
nitrogen drying (7s @ 4000rpm)

and has a cycle time of ~2 minutes

Equipment performance and process related parameters

Purpose		Development of DUV resist: KRF M230Y and KRF M35G
Developer		2,38% water based TMAH
Process parameters	Spin speed	10 - 5000 rpm
	Spin acceleration	100 - 10000 rpm/s
	Hotplate temperature	130°C for post exposure baking
Substrates	Substrate size	100 mm wafers 150 mm wafers 200 mm wafers (requires tool change)
	Allowed materials	Any standard cleanroom material
	Batch	1 - 25

@@ Line 1: / Line 1: @@
-==SÜSS Spinner-Stepper==
+{{cc-nanolab}}
-[[Image:Gamma_2M.jpg|200×200px|right|thumb|The SÜSS Spinner-Stepper is placed in Stepper room.]]
-This spinner is dedicated for spinning DUV resists. The spinner is fully automatic and can run up to 25 substrates in a batch  4", 6", and 8" size. The machine is equipped with the 3 resist lines, an automatic syringe system and a solvent line for cleaning and back-side rinse.
+'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php?title=Specific_Process_Knowledge/Lithography/DUVStepperLithography click here]'''
-'''The user manual(s), quality control procedure(s) and results and contact information can be found in LabManager:'''
-Equipment info in [http://labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=279 LabManager]
-==Process information==
+[[Category: Equipment|Lithography exposure]]
+[[Category: Lithography|Exposure]]
-The users are not allowed to use the spinner. In case you would like to do DUV lithography please contact Lithography team, who will consult your and run your wafers for you.
+__TOC__
-Information about resist can be found here:
+{{:Specific Process Knowledge/Lithography/Coaters/GammaDUV}}
-* Bottom Anti Reflection Coating (BARC)[http://www.brewerscience.com/products/arc/dry-etch-arc-coatings/248nm-products/duv42s DUV 42S-6 ].
+{{:Specific Process Knowledge/Lithography/DUVStepperLithography/DUVStepper}}
-*[[Media:Datasheet_DUV42S.pdf |Datasheet DUV42S-6]].
-*Positive DUV resist for spinning in 300-600nm thickness range [[Media:M230Y_PSM_annular_130C_PEB.pdf|KRF M230Y]].
-*Positive DUV resist for spinning in 1600-800nm thickness range [[Media:M35G_Danchip_intro.pdf|KRF M35G]].
-*Negative DUV resist for spinning in 1400-800nm or diluted with EC Solvent in 1:1 in 400-200nm thickness range [[Media:UVN2300.pdf|UVN2300-0.8]].
-== DUV Stepper FPA-3000EX4 from Canon ==
+{{:Specific Process Knowledge/Lithography/Development/DUV_developer}}
-[[Image:stepper_image_1.jpg|200×200px|right|thumb|DUV Stepper is placed in the stepper room.]]
-The FPA-3000EX4 is an advanced exposure system designed for mass-production of 6 and 8 inch large wafers/ devices. The largest applicable thickness of the wafers/ devices is 1,2 mm. Also 4" wafers/ devices can be processed with some restrictions concerning throughput, resolution, uniformity and maximum allowed wafer thickness. The system is equipped with a KrF Excimer laser from Cymer (wavelength 248 nm) leading to a specified resolution of 250 nm that is improved when well-defined pattern designs are used. The best resolution could be achieved with single line structures (line widths down to 160 nm) and multi-line structures (line widths down to 180 nm).
-'''The user manual(s), quality control procedure(s) and results and contact information can be found in LabManager:'''
-Equipment info in [http://labmanager3.danchip.dtu.dk/function.php?module=Machine&view=view&page_id=169 LabManager]
-== Process information ==
-) A DUV reticle is needed that should be designed by the customer. Please note that the projection magnification of the stepper is 1:5, so that the dimensions of the pattern on the reticle are expanded by a factor 5 with respect to those printed on the wafer.
-The whole reticle can be regarded as one chip that might be printed one time onto the wafer or repeatedly - step-by-step - in a two dimensional array. Alternatively, different chips can be placed onto the reticle, separated by frames. These chips can be printed individually onto the wafer either as one chip or as an array. Then the individual chips of the design have to be surrounded by frames. Additionally, the pattern of two different reticles can be combined on one wafer.
-If the pattern of the reticle should be aligned to another one - that is already located on the wafer - the wafer needs to be equipped with several alignment marks. A guide for preparing reticle files for the Canon FPA-3000EX4 stepper, having the correct dimensions and positions of the individual patterns, frames and alignment marks can be found here: [[File:Canon_Stepper_Reticle_Guide_v0_03.pdf]].
-Usually the reticle is fabricated by an external company. It is recommended to send the mask design in GDS format to the Photolith group of Danchip, so that they can verify the mask design and order the mask.
-) The SÜSS Spinner-Stepper is dedicated for spinning DUV resists. Please note that a Bottom Anti-Reflective Coating (BARC) is necessary to guarantee high quality of both the resist film and the exposure. Please find the specification of the SÜSS Spinner-Stepper in the LabAdviser [[http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Photolithography/Photoresist_Spinners#S.C3.9CSS_Spinner-Stepper]].
-) Usually, in order to guarantee the highest fidelity of the produced pattern on the wafer the best suitable exposure dose has to be evaluated for each individual pattern, resist type and resist thickness. Thus it is recommended to perform an exposure dose test as a first test, when a new reticle is used. After evaluation by SEM the identified dose - that leads to the most accurate pattern - can be applied in the DUV process for the required wafers.
-) The DUV process - including BARC and resist spinning, exposure, post exposure bake and development - will be performed by the Photolith group of Danchip. Any kind of inspection, evaluation and pre- and post-processing should be performed by the customer.
-== Overview of performance ==
-{| border="2" cellspacing="0" cellpadding="4" align="left"
-|'''Magnification'''
-|1 : 5
-|-
-|'''NA'''
-|0,6
-|-
-|'''Sigma'''
-|0,65 (usual illumination mode)
-|-
-|'''Illumination Intensity'''
-|2800 W/m<sup>2</sup>
-|-
-|'''Illumination uniformity'''
-|1,2 %
-|-
-|'''Wavelength'''
-|248 nm
-|-
-|'''Chip size'''
-|22 x 26 mm (maximum on wafer)
-|-
-|'''Allignment accuracy'''
-|3 sigma = 50 nm
-|-
-|}