Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano141: Difference between revisions
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== The nano1.41 recipe == | == The nano1.41 recipe == | ||
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Latest revision as of 15:16, 2 February 2023
Feedback to this page: click here
The nano1.41 recipe
Unless otherwise stated, all content on this page was created by Jonas Michael-Lindhard, DTU Nanolab
| Recipe | Gas | C4F8 75 sccm, SF6 38 sccm |
|---|---|---|
| Pressure | 4 mTorr, Strike 3 secs @ 15 mTorr | |
| Power | 800 W CP, 75 W PP | |
| Temperature | -20 degs | |
| Hardware | 100 mm Spacers | |
| Time | 120 secs | |
| Conditions | Run ID | 2001 |
| Conditioning | Sequence: Oxygen clean, MU tests, processes, no oxygen between runs | |
| Mask | 211 nm zep etched down to 10 nm |
- The results of the nano1.41 recipe
-
The 30 nm trenches -
The 60 nm trenches -
The 90 nm trenches -
The 120 nm trenches -
The 150 nm trenches
| Nominal trench line width | ' | 30 | 60 | 90 | 120 | 150 | Average | Std. dev. |
| Etch rates | nm/min | 155 | 161 | 164 | 171 | 179 | 166 | 9 |
| Sidewall angle | degs | 91 | 90 | 90 | 90 | 90 | 90 | 1 |
| CD loss | nm/edge | -1 | -11 | -13 | -36 | -37 | -20 | 16 |
| CD loss foot | nm/edge | 4 | 1 | 0 | -22 | -10 | -5 | 11 |
| Bowing | 5 | 2 | 5 | 4 | 1 | 3 | 2 | |
| Bottom curvature | -45 | -40 | -34 | -29 | -23 | -34 | 9 | |
| zep | nm/min | 101 | ||||||