View source for Specific Process Knowledge/Etch/Etching of Silicon Oxide/SiO2 etch using Plasma Asher

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[[Category: Equipment|Lithography]]
[[Category: Lithography]]
[[Category: Etch]]

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==SiO2 can be etched in the Plasma Asher using CF4==
''Test work done January 2014 by Lis Nielsen and Berit Herstrøm @Nanolab''


SiO2 can be etched in the Plasma Asher using CF4 and aluminum as a masking material. This gives an isotropic etch. In test2 the SiO2 layer has been etched through and there is a small over etch in the Silicon substrate. The masking material is 100 nm Al. Etch rate and uniformity measurements have been done on wafers with no mask. 

<gallery caption="Images of isotropic SiO2 etch in the Plasma asher: Test 2" widths="350px" heights="300" perrow="4"> 
image:Plasma Asher SiO2 TEST1 55.jpg|Profile image - a little rotated
image:Plasma Asher SiO2 etch TEST1 68.jpg|Profile image
image:Plasma Asher SiO2 etch TEST1 65.jpg|Tilted profile image of lines
image:Plasma Asher SiO2 etch TEST1 66.jpg|Tilted profile image of lines
</gallery>


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|colspan="6" style="text-align: center;" style="background: #efefef;" | '''Plasma Asher parameter settings and results for the tests'''

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!scope="row" |&nbsp;
!|Test1
!|Test2
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!O2 flow
|0 sccm
|0 sccm
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!N2 flow
|0 sccm
|0 sccm
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!CF4 flow
|200 sccm
|200 sccm
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!Power
|1000 W
|1000 W
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!Process Time
|10 min
|50 min
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!Average Etch rate on wafer (5 points measured)
|22.6 nm/min
|31.8 nm/min
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!Non-uniformity over the wafer (5 points measured)
|&plusmn;10.8 %
|&plusmn;11.0 %
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!Non-uniformity plot
|[[image:Plasma_Asher_SiO2_etch_rate_contour_plot_test1.jpg|275x275px|right|thumb]] 
|[[image:Plasma_Asher_SiO2_etch_rate_contour_plot_test2.jpg|275x275px|right|thumb]] 
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