View source for Specific Process Knowledge/Etch/Etching of Silicon Oxide/SiO2 etch using ASE/tests C4F8/H2

===Recipes and results - <span style="background:#FFD850">C<sub>4</sub>F<sub>8</sub> / H<sub>2</sub> tests</span> ===

{| border="1" cellspacing="1" cellpadding="1"  align="left"
! '''Recipe'''
! '''Recipe parameters'''
! '''Process time'''
! '''Date'''
! '''SEM picture'''
! '''Etch rate in SiO2'''
! '''Etch rate in resist <br> (AZ5214E inverse)'''
! '''Selectivity <br> (SiO2:resist)'''
|-
|-
|-style="background:white; color:black"
|<!-- '''recipe name''' --> SiO2_ICP
|<!-- '''SiO2 before etch''' --> C<sub>4</sub>F<sub>8</sub>= '''10''' sccm <br> H<sub>2</sub>= '''28''' sccm <br> Coil= 1000W <br> Platen= 100W <br> Press= 2.5mTorr <br> Temp= 20°C <br>
|<!--'''Process time'''--> 04:00 min
|<!--'''Date'''--> 04/09/2023
|<!--'''SEM picture'''-->  [[File:SiO2 ICP 4m pat C 07.png|200px]] [[File:SiO2_ICP 4min af PA 02.png|200px]] [[File:SiO2 ICP 4m pat C 04.png|200px]]
|<!--'''Etch rate in SiO2'''--> 211,9 nm/min <br> +/- 14.6%
|<!--'''Etch rate in resist'''--> 153,4 nm/min <br> +/- 16.7%
|<!--'''Selectivity (SiO2:resist)'''--> 1.4
|-
|-
|-style="background:white; color:black"
|<!-- '''recipe name''' --> SiO2_ICP
|<!-- '''SiO2 before etch''' --> C<sub>4</sub>F<sub>8</sub>= 10 sccm <br> H<sub>2</sub>= 28 sccm <br> Coil= '''800W''' <br> Platen= '''15W''' <br> Press= 2.5mTorr <br> Temp= 20°C <br>
|<!--'''Process time'''--> 04:00 min
|<!--'''Date'''--> 22/09/2023
|<!--'''SEM picture'''--> [[File:SiO2_ICP 800W-15W 4min C 04.png|200px]] [[File:SiO2_ICP 800.15W 4min af PA 02.png|200px]] [[File:SiO2_ICP 800W-15W 4min E 04.png|200px]]
|<!--'''Etch rate in SiO2'''--> 134,7 nm/min <br> +/- 20.8%
|<!--'''Etch rate in resist'''--> 145,7 nm/min <br> +/- 25.1%
|<!--'''Selectivity (SiO2:resist)'''--> 0.92
|-
|-

|}