Specific Process Knowledge/Etch/Etching of Silicon Oxide/SiO2 etch using ASE/tests C4F8/H2
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Recipes and results - C4F8 / H2 tests
| Recipe | Recipe parameters | Process time | Date | SEM picture | Etch rate in SiO2 | Etch rate in resist (AZ5214E inverse) |
Selectivity (SiO2:resist) |
|---|---|---|---|---|---|---|---|
| SiO2_ICP | C4F8= 10 sccm H2= 28 sccm Coil= 1000W Platen= 100W Press= 2.5mTorr Temp= 20°C |
04:00 min | 04/09/2023 |   
|
211,9 nm/min +/- 14.6% |
153,4 nm/min +/- 16.7% |
1.4 |
| SiO2_ICP | C4F8= 10 sccm H2= 28 sccm Coil= 800W Platen= 15W Press= 2.5mTorr Temp= 20°C |
04:00 min | 22/09/2023 |   
|
134,7 nm/min +/- 20.8% |
145,7 nm/min +/- 25.1% |
0.92 |