View source for Specific Process Knowledge/Lithography/UVExposure

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'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php?title=Specific_Process_Knowledge/Lithography/UVExposure click here]'''

[[Category: Equipment|Lithography exposure]]
[[Category: Lithography|Exposure]]

__TOC__

== UV Exposure Comparison Table ==


{|border="1" cellspacing="1" cellpadding="10" style="text-align:left;" 

!colspan="2" border="none" style="background:silver; color:black;" align="center"|Equipment 
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/UVExposure#Aligner: MA6-1|Aligner: MA6-1]]</b>
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/UVExposure#Aligner:_MA6-2|Aligner: MA6-2]]</b>
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/UVExposure#Aligner: Maskless 01|Aligner: Maskless 01]]</b>
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/UVExposure#Aligner: Maskless 02|Aligner: Maskless 02]]</b>
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/UVExposure#Aligner: Maskless 03|Aligner: Maskless 03]]</b>
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/UVExposure#Aligner: Maskless 04|Aligner: Maskless 04]]</b>
<!--|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/UVExposure#Inclined UV Lamp|Inclined UV Lamp]]</b>-->

|-
!style="background:silver; width:100px; color:black;" align="center"|Purpose 
|style="background:LightGrey; color:black"| 
|style="background:WhiteSmoke; color:black"|
*Top Side Alignment
*Back Side Alignment
*UV exposure
OBS: this tool is in PolyFabLab
|style="background:WhiteSmoke; color:black"|
*Top Side Alignment
*Back Side Alignment
*UV exposure
*(DUV exposure)
*Bond alignment
|style="background:WhiteSmoke; color:black"|
*Top Side Alignment
*Maskless UV exposure
|style="background:WhiteSmoke; color:black"|
*Top Side Alignment
*Back Side Alignment
*Maskless UV exposure
|style="background:WhiteSmoke; color:black"|
*Top Side Alignment
*Back Side Alignment
*Maskless UV exposure
|style="background:WhiteSmoke; color:black"|
*Top Side Alignment
*Maskless UV exposure
*Direct laser writing
OBS: this tool is in PolyFabLab
<!--|style="background:WhiteSmoke; color:black"|
*UV exposure
*DUV exposure-->

|-
!style="background:silver; color:black" align="center" valign="center" rowspan="4"|Performance
|style="background:LightGrey; color:black"|Minimum feature size
|style="background:WhiteSmoke; color:black"|
~1 µm
|style="background:WhiteSmoke; color:black"|
~1 µm
|style="background:WhiteSmoke; color:black"|
~1 µm
|style="background:WhiteSmoke; color:black"|
~1 µm
|style="background:WhiteSmoke; color:black"|
~1 µm
|style="background:WhiteSmoke; color:black"|
~1 µm
<!--|style="background:WhiteSmoke; color:black"|-->

|-
|style="background:LightGrey; color:black"|Alignment accuracy
|style="background:WhiteSmoke; color:black"|
*TSA: ±2 µm
*BSA: ±5 µm
|style="background:WhiteSmoke; color:black"|
*TSA: ±1 µm
*BSA: ±2 µm
|style="background:WhiteSmoke; color:black"|
±2 µm<br>(±1 µm possible)
|style="background:WhiteSmoke; color:black"|
*TSA: ± 0.5 µm
*BSA: ± 1 µm
|style="background:WhiteSmoke; color:black"|
*TSA: ± 0.5 µm
*BSA: ± 1 µm
|style="background:WhiteSmoke; color:black"|
±1 µm
<!--|style="background:WhiteSmoke; color:black"|-->

|-
|style="background:LightGrey; color:black"|Exposure light
|style="background:WhiteSmoke; color:black"|
*350W Hg lamp
*i-line filter (365nm bandpass filter)
|style="background:WhiteSmoke; color:black"|
*500W Hg-Xe lamp
*i-line filter (365nm bandpass filter)
|style="background:WhiteSmoke; color:black"|
365nm LED
|style="background:WhiteSmoke; color:black"|
375nm laser diode array
|style="background:WhiteSmoke; color:black"|
405nm laser diode array
|style="background:WhiteSmoke; color:black"|
*365nm LED
*405nm laser diode
<!--|style="background:WhiteSmoke; color:black"|
*1000 W Hg-Xe lamp
*Dichroic mirror:
**Near UV (350-450nm)
**Mid UV (260-320nm)
**Deep UV (220-260nm)-->

|-
|style="background:LightGrey; color:black"|Exposure mode
|style="background:WhiteSmoke; color:black"|
*Flood exposure
*Proximity
*Contact:
**Soft contact
**Hard contact
**Vacuum contact
|style="background:WhiteSmoke; color:black"|
*Flood exposure
*Proximity
*Contact:
**Soft contact
**Hard contact
**Vacuum contact
|style="background:WhiteSmoke; color:black"|
*Projection:
**Pneumatic auto-focus
|style="background:WhiteSmoke; color:black"|
*Projection:
**Optical auto-focus
**Pneumatic auto-focus
|style="background:WhiteSmoke; color:black"|
*Projection:
**Pneumatic auto-focus
|style="background:WhiteSmoke; color:black"|
*Projection:
**Optical auto-focus
**Pneumatic auto-focus
*Direct laser writing:
**Optical auto-focus
**Pneumatic auto-focus
<!--|style="background:WhiteSmoke; color:black"|
*Flood exposure
*Proximity exposure with home-made chuck and maskholder
*Inclined exposure
*Rotating exposure-->

|-
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Substrates
|style="background:LightGrey; color:black"|Batch size
|style="background:WhiteSmoke; color:black"|
*1 100 mm wafer
|style="background:WhiteSmoke; color:black"|
*1 small sample, down to 10x10 mm<sup>2</sup>
*1 50 mm wafer
*1 100 mm wafer
*1 150 mm wafer
|style="background:WhiteSmoke; color:black"|
*1 small sample, down to 5x5 mm<sup>2</sup>
*1 50 mm wafer
*1 100 mm wafer
*1 150 mm wafer
|style="background:WhiteSmoke; color:black"|
*1 small sample, down to 3x3 mm<sup>2</sup>
*1 50 mm wafer
*1 100 mm wafer
*1 150 mm wafer
*1 200 mm wafer
|style="background:WhiteSmoke; color:black"|
*1 small sample, down to 5x5 mm<sup>2</sup>
*1 50 mm wafer
*1 100 mm wafer
*1 150 mm wafer
|style="background:WhiteSmoke; color:black"|
*1 small sample, down to 3x3 mm<sup>2</sup>
*1 50 mm wafer
*1 100 mm wafer
*1 150 mm wafer
<!--|style="background:WhiteSmoke; color:black"|
*all sizes up to 8inch-->

|-
| style="background:LightGrey; color:black"|Allowed materials
|style="background:WhiteSmoke; color:black"|
*All PolyFabLab materials
|style="background:WhiteSmoke; color:black"|
*All cleanroom materials except copper and steel
*Dedicated chuck for III-V materials
|style="background:WhiteSmoke; color:black"|
*All cleanroom materials
|style="background:WhiteSmoke; color:black"|
*All cleanroom materials
|style="background:WhiteSmoke; color:black"|
*All cleanroom materials
|style="background:WhiteSmoke; color:black"|
*All PolyFabLab materials
<!--|style="background:WhiteSmoke; color:black"|
*All cleanroom materials-->
|- 
|}

==Aligner: MA6-1==
[[Image:KSAligner in E-4.jpg|400px|thumb|The Aligner: MA6-1 is located in PolyFabLab.]]

SUSS Mask Aligner MA6 is designed for high resolution photolithography. 
The 365nm exposure wavelength version is capable of 1.25 (1.0) um resolution in vacuum contact. All contact exposure programs (vacuum, hard, soft, proximity) are supplied. 
Two alignment options are available: top side alignment (TSA) with a split field or a video microscope and back side alignment (BSA) with BSA microscope. It is also possible to make IR- light alignment.


'''Training videos:''' 
<br/>The training videos were made for MA6-2, but operation of MA6-1 is very similar as they are exactly the same model. Due to a different power supply, however, procedures for ignition and intensity control of the lamp is different for MA6-1. Please refer to the manual for the correct procedures. 

[https://www.youtube.com/watch?v=o8IBtfQHNzU Operation]

[https://www.youtube.com/watch?v=rvUuXYgw-xU Alignment]

The user manual(s), quality control procedure(s) and results, and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=44 LabManager]  - '''requires login'''

===Exposure dose===
[[Specific Process Knowledge/Lithography/Resist#Aligner: MA6-1|Information on UV exposure dose]]

===Process information===
The Aligner: MA6-1 has an i-line notch filter installed. This results in an exposure light peak around 365nm with a FWHM of 7nm. 

Link to information about [[Specific_Process_Knowledge/Pattern_Design#Alignment_marks|alignment mark design and locations]].

<!--
===Quality Control (QC)===
{| border="1" cellspacing="2" cellpadding="2" colspan="3"
|bgcolor="#98FB98" |'''Quality Control (QC) for KS Aligner'''
|-
|
*[http://labmanager.dtu.dk/d4Show.php?id=5644&mach=44 The QC procedure for Aligner: MA6-1] - '''requires login'''<br>
*[https://labmanager.dtu.dk/view_binary.php?type=data&mach=44 The newest QC data for Aligner: MA6-1] - '''requires login'''
{| {{table}}
| align="center" | 
{| border="1" cellspacing="1" cellpadding="2"  align="center" style="width:300px"

! QC Recipe:
! Manual intensity measurement 
|- 
|Measurement area
|100 mm
|- 
|Number of measurements
|5
|-
|}
| align="center" valign="top"|
{| border="2" cellspacing="1" cellpadding="2" align="center" style="width:400px"
!QC limits
!Aligner: MA6-1
|-
|Nominal intensity
|8 mW/cm<sup>2</sup> @ 365 nm
|-
|Intensity deviation from nominal
|≤5%
|-
|Intensity non-uniformity
|≤2%
|-
|}
|-
|}
Power supply and/or lamp will be adjusted if intensity is outside the limit.
|}
-->

===Equipment performance and process related parameters===

{|border="1" cellspacing="1" cellpadding="10" style="text-align:left;" 


!style="background:silver; color:black;" align="center" width="60"|Purpose 
|style="background:LightGrey; color:black"|
|style="background:WhiteSmoke; color:black" colspan="2"|
Alignment and UV exposure
|-

!style="background:silver; color:black" align="left" valign="center" rowspan="5"|Performance

|style="background:LightGrey; color:black"|Exposure mode
|style="background:WhiteSmoke; color:black" colspan="2"|
vacuum contact, hard contact, soft contact, proximity, flood exposure
|-
| style="background:LightGrey; color:black"|Exposure light/filters
|style="background:WhiteSmoke; color:black" colspan="2"|
*365 nm (i-line)
*broadband (i-, g-, h-line), requires tool change
*(303 nm, requires tool change)
|-
|style="background:LightGrey; color:black"|Minimum structure size
|style="background:WhiteSmoke; color:black" colspan="2"|
down to 1.25µm
|-
|style="background:LightGrey; color:black"|Mask size
|style="background:WhiteSmoke; color:black" colspan="2"|
*5x5 inch
|-
|style="background:LightGrey; color:black"|Alignment modes
|style="background:WhiteSmoke; color:black" colspan="2"|
*Top side (TSA), ±2µm 
*Backside (BSA), ±5µm
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
|style="background:LightGrey; color:black"|Substrate size
|style="background:WhiteSmoke; color:black" colspan="2"|
Mask exposure and alignment:
* 100 mm wafers
Flood exposure:
* samples up to 150 mm wafers
|-
| style="background:LightGrey; color:black"|Allowed materials
|style="background:WhiteSmoke; color:black" colspan="2"|
All PolyFabLab materials
|-
|style="background:LightGrey; color:black"|Batch
|style="background:WhiteSmoke; color:black" colspan="2"|
1 
|- 
|}

<br clear="all" />

==Aligner: MA6-2==
[[Image:AlignerMA6-2 in E-4.jpg|400px|thumb|The Aligner: MA6-2 is located in E-4.]]

The Süss MicroTek Mask Aligner MA6 is designed for high resolution photolithography. 
The 365nm exposure wavelength version is capable of 1.25 (1.0) um resolution in vacuum contact. All contact exposure programs (vacuum, low vacuum, hard, soft, proximity) are supplied. 
Two alignment options are available: top side alignment (TSA) with a split field or a video microscope and back side alignment (BSA) with BSA (video) microscope.

The aligner can also be used for bond alignment (for Wafer Bonder 02). Special training is required.


'''Training videos:'''

[https://www.youtube.com/watch?v=o8IBtfQHNzU Operation]

[https://www.youtube.com/watch?v=rvUuXYgw-xU Alignment]


The user manual, quality control procedures and results, user APVs, and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=339 LabManager] - '''requires login'''

===Exposure dose===
[[Specific Process Knowledge/Lithography/Resist#Aligner:_MA6-2|Information on UV exposure dose]]

===Process information===
The Aligner: MA6-2 has an i-line notch filter installed. This results in an exposure light peak at 365nm. Compared to exposure on the KS Aligner, the optimal dose should be very similar. The 500W Hg-Xe lamp also enables exposure in the DUV range around 240nm. This functionality is not established yet, partly due to safety concerns. 

Link to information about [[Specific_Process_Knowledge/Pattern_Design#Alignment_marks|alignment mark design and locations]].

===Quality Control (QC)===
{| border="1" cellspacing="2" cellpadding="2" colspan="3"
|bgcolor="#98FB98" |'''Quality Control (QC) for Aligner: MA6-2'''
|-
|
*[http://labmanager.dtu.dk/d4Show.php?id=5644&mach=339 The QC procedure for Aligner: MA6-2] - '''requires login'''<br>
*[https://labmanager.dtu.dk/view_binary.php?type=data&mach=339 The newest QC data for Aligner: MA6-2] - '''requires login'''
{| {{table}}
| align="center" | 
{| border="1" cellspacing="1" cellpadding="2"  align="center" style="width:300px"

! QC Recipe:
! Manual intensity measurement 
|- 
|Measurement area
|100 mm
|- 
|Number of measurements
|5
|-
|}
| align="center" valign="top"|
{| border="2" cellspacing="1" cellpadding="2" align="center" style="width:400px"
!QC limits
!Aligner: MA6-2
|-
|Nominal intensity
|11 mW/cm<sup>2</sup> @ 365 nm
|-
|Intensity deviation from nominal
|≤5%
|-
|Intensity non-uniformity
|≤2%
|-
|}
|-
|}
Power supply and/or lamp will be adjusted if intensity is outside the limit.
|}

===Alignment===
'''Top Side Alignment:'''
*TSA microscope standard objectives: 5X, and 10X (20X available)
*TSA microscope special objectives: 11.25X offset (for smaller separation)

*Minimum distance between TSA microscope objectives: 33 mm (8 mm for special objectives)
**Alignment of smaller separations is possible using the "scan microscope" function
*Maximum distance between TSA microscope objectives: 160 mm
*TSA microscope travel range: X +/- 25mm; Y +20mm / -75mm (towards flat)

'''BackSide Alignment:'''
*Minimum distance between BSA microscope objectives: 15 mm
*Maximum distance between BSA microscope objectives: 100 mm
*BSA microscope travel range: X +50mm / -16mm; Y +50mm / -20mm (towards flat)
*BSA chuck view ranges:
**2": X +/-  8-22mm; Y +/- 0-6mm
**4": X +/- 14-46mm; Y +/- 0-10mm
**6": X +/- 14-69mm; Y +/- 0-10mm (OBS: Max. separation of BSA microscopes is 100mm)


'''Microscope field of view (W x H, splitfield):'''
*TSA 5X
**Oculars: 1.3mm x 2.6mm (Ø2.6mm full field)
**Camera: 350µm x 500µm (700µm x 500µm full field)
*TSA 10X
**Oculars: 0.6mm x 1.3mm (Ø1.3mm full field)
**Camera: 150µm x 250µm (350µm x 250µm full field) 
*TSA special
**Oculars: 0.55mm x 1.1mm (Ø1.1mm full field)
**Camera: 150µm x 200µm (300µm x 200µm full field)
*BSA camera
**Low: 1.5mm x 2mm (3mm x 2mm full field)
**High: 450µm x 650µm (950µm x 650µm full field)

=== Equipment performance and process related parameters ===

{|border="1" cellspacing="1" cellpadding="10" style="text-align:left;" 

!style="background:silver; color:black;" align="center" width="60"|Purpose 
|style="background:LightGrey; color:black"|
|style="background:WhiteSmoke; color:black" colspan="2"|
Mask alignment and UV exposure, potentially DUV exposure <sup>1)</sup>

Bond alignment
|-

!style="background:silver; color:black" align="left" valign="center" rowspan="5"|Performance

|style="background:LightGrey; color:black"|Exposure mode
|style="background:WhiteSmoke; color:black" colspan="2"|
vacuum contact, hard contact, soft contact, proximity, flood exposure
|-
| style="background:LightGrey; color:black"|Exposure light/filters
|style="background:WhiteSmoke; color:black" colspan="2"|
*broadband (i-, g-, h-line)
*365 nm (i-line)
*"UV300" (280-350 nm)
*DUV (240 nm) <sup>1)</sup>
|-
|style="background:LightGrey; color:black"|Minimum structure size
|style="background:WhiteSmoke; color:black" colspan="2"|
Typically 1.25 µm, possibly down to 0.8 µm <sup>1)</sup>
|-
|style="background:LightGrey; color:black"|Mask size
|style="background:WhiteSmoke; color:black" colspan="2"|
*5x5 inch
*7x7 inch
*special holder for 4 x 2" designs on 5x5 inch
|-
|style="background:LightGrey; color:black"|Alignment modes
|style="background:WhiteSmoke; color:black" colspan="2"|
*Top side (TSA), ±1µm (machine spec: ±2µm)
*Backside (BSA), ±2µm (machine spec: ±5µm)
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
|style="background:LightGrey; color:black"|Substrate size
|style="background:WhiteSmoke; color:black" colspan="2"|
* small pieces 1x1cm
* 50 mm wafers
* 100 mm wafers
* 150 mm wafers
|-
| style="background:LightGrey; color:black"|Allowed materials
|style="background:WhiteSmoke; color:black" colspan="2"|
All cleanroom materials except copper and steel

Dedicated chuck for III-V materials
|-
|style="background:LightGrey; color:black"|Batch
|style="background:WhiteSmoke; color:black" colspan="2"|
1 
|- 
|}

<sup>1)</sup> Not available yet. Requires tool change. Would require safety investigation (and a dedicated project) to become available.

===Light intensity and uniformity after lamp ignition===

[[image:MA6-2_light_intensity_and_uniformity_from_ignition.png|400px|right|thumb|Light intensity and uniformity after lamp ignition. CP is constant power mode, CI is constant intensity mode. The accept limits for the CI mode is ±5%, the accept limit for the non-uniformity is 2%. CP mode has no accept limit.]]

The lamp requires about 15 minutes of on-time after lamp ignition, before the light output has stabilized, and users using the constant power mode should always wait for 15 minutes after ignition, before starting processing. 

If users use the constant intensity mode, this waiting time is not necessary, since the internal light sensor automatically adjusts the output to match the setpoint value.

The non-uniformity of the light, in CI mode, is unaffected by the stabilization time.

<br clear="all" />

== Aligner: Maskless 01 ==

[[Image:Heidelberg_MLA100.jpg|400px|thumb|Aligner: Maskless 01 is located in E-4.]]

The logon password for the PC is "mla" (without quotation marks).

The MLA 100 Maskless Aligner located in the E-4 cleanroom is a direct exposure lithography tool installed in 2017. 
It is a UV LED exposure system, that exposes the patterns directly on photosensitive resists on chips, 2, 4, and 6 inch substrates, without prior fabrication of the mask. 
The system offers top side alignment with high accuracy.

Link to information about [[Specific_Process_Knowledge/Pattern_Design#Alignment_marks|alignment mark design]].

The user manual and contact information can be found in LabManager:

Equipment info in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=422 LabManager] - '''requires login'''

===Exposure dose and defocus===
[[Specific Process Knowledge/Lithography/Resist#Aligner:_Maskless_01|Information on UV exposure dose]]

===[[Specific Process Knowledge/Lithography/Aligners/Aligner: Maskless 01 processing|Process information]]===
*[[Specific_Process_Knowledge/Lithography/Aligners/Aligner:_Maskless_01_processing#Exposure_technology|Exposure technology]]
*[[Specific_Process_Knowledge/Lithography/Aligners/Aligner:_Maskless_01_processing#Process_Parameters|Process parameters]]
*[[Specific_Process_Knowledge/Lithography/Aligners/Aligner:_Maskless_01_processing#Substrate_positioning|Substrate positioning]]
*[[Specific_Process_Knowledge/Lithography/Aligners/Aligner:_Maskless_01_processing#Alignment|Alignment]]
*[[Specific_Process_Knowledge/Lithography/Aligners/Aligner:_Maskless_01_processing#Optimal_use_of_the_maskless_aligner|Optimal use of the maskless aligner]]

===Quality Control (QC)===
{| border="1" cellspacing="2" cellpadding="2" colspan="3"
|bgcolor="#98FB98" |'''Quality Control (QC) for Aligner: Maskless 01 (MLA1) - Dose and Defoc'''
|-
|
*[http://labmanager.dtu.dk/d4Show.php?id=5644&mach=422 The QC procedure for Aligner: Maskless 01 (MLA1)] - '''requires login'''<br>
*[https://labmanager.dtu.dk/view_binary.php?type=data&mach=422 The newest QC data for Aligner: Maskless 01 (MLA1)] - '''requires login'''
{| {{table}}
| align="center" | 
{| border="1" cellspacing="1" cellpadding="2"  align="center"

! QC:
! Dose and defocus test on 1.5µm AZ5214E
! QC limits
|- 
|Dose test
|
Step size is 5 mJ/cm<sup>2</sup><br>
Test range is last QC value ± 10 mJ/cm<sup>2</sup> (5 steps total)
|none
|-
|Defoc test
|
Step size is 1 defoc<br>
Test range is last QC value ± 4 (5 steps total)
|none
|-
|}

|}
|}
<br/>

{| border="1" cellspacing="2" cellpadding="2" colspan="3"
|bgcolor="#98FB98" |'''Quality Control (QC) for Aligner: Maskless 01 (MLA1) - Alignment'''
|-
|
*[http://labmanager.dtu.dk/d4Show.php?id=5644&mach=422 The QC procedure for Aligner: Maskless 01 (MLA1)] - '''requires login'''<br>
*[https://labmanager.dtu.dk/view_binary.php?type=data&mach=422 The newest QC data for Aligner: Maskless 01 (MLA1)] - '''requires login'''
{| {{table}}
| align="center" | 
{| border="1" cellspacing="1" cellpadding="2"  align="center"

! QC Recipe:
! Alignment accuracy test
! QC limits
|- 
|Topside alignment
|
Expose an overlay design after automatic alignment to 4 alignment marks using the High Res camera and applying scaling and shearing.<br>
Alignment accuracy in 9 points across a 100mm wafer is measured, the average alignment error is reported.
| Must be better than 1µm
|- 
|}
| align="center" valign="top"|
|-
|}
Camera offsets will be adjusted if alignment error is outside the limit.
|}
<br/>

=== Equipment performance and process related parameters ===

{|border="1" cellspacing="1" cellpadding="10" style="text-align:left;" 

!style="background:silver; color:black;" align="center" width="60"|Purpose 
|style="background:LightGrey; color:black"|
|style="background:WhiteSmoke; color:black" colspan="2"|
Alignment and UV exposure 
|-

!style="background:silver; color:black" align="left" valign="center" rowspan="6"|Performance

|style="background:LightGrey; color:black"|Exposure mode
|style="background:WhiteSmoke; color:black" colspan="2"|
Projection
|-
| style="background:LightGrey; color:black"|Exposure light
|style="background:WhiteSmoke; color:black" colspan="2"|
365nm (LED), FWHM=8nm
|-
|style="background:LightGrey; color:black"|Focusing method
|style="background:WhiteSmoke; color:black" colspan="2"|
Pneumatic
|-
|style="background:LightGrey; color:black"|Minimum structure size
|style="background:WhiteSmoke; color:black" colspan="2"|
down to 1µm
|-
|style="background:LightGrey; color:black"|Design formats
|style="background:WhiteSmoke; color:black" colspan="2"|
*'''GDS-II'''
*CIF
*DXF
*Gerber
*HIMT format
|-
|style="background:LightGrey; color:black"|Alignment modes
|style="background:WhiteSmoke; color:black" colspan="2"|
Top side only, ±2µm (±1µm can be achieved)

|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
|style="background:LightGrey; color:black"|Substrate size
|style="background:WhiteSmoke; color:black" colspan="2"|
* maximum writing area: 125x125 mm<sup>2</sup>
* 150 mm wafer
* 100 mm wafer
* 50 mm wafer
* pieces down to 5x5 mm<sup>2</sup>
|-
| style="background:LightGrey; color:black"|Allowed materials
|style="background:WhiteSmoke; color:black" colspan="2"|
All cleanroom materials
<br>Total height variation across the substrate must be less than ±40 µm - including wafer bow
|-
|style="background:LightGrey; color:black"|Batch
|style="background:WhiteSmoke; color:black" colspan="2"|
1 
|- 
|}

<br clear="all" />

==Aligner: Maskless 02==
[[File:Aligner MLA 2.jpg|400px|thumb|Aligner: Maskless 02 is located in E-5.]]
MLA150 WMII maskless aligner from Heidelberg Instruments GmbH (installed 2019 as WMI (0.6µm resolution), rebuilt to WMII 2023).


'''Special features'''
*Optical Autofocus
*Backside Alignment
*Basic Gray Scale Exposure
*Advanced Field Alignment Mode for alignment to individual chips/devices on the substrate
*High Aspect Ratio Mode for exposure of thick resists
*200 x 200 mm exposure field
*Separate conversion PC

Link to information about [[Specific_Process_Knowledge/Pattern_Design#Alignment_marks|alignment mark design]].

'''[https://www.youtube.com/playlist?list=PLjWVU97LayHAiCabstMfAUeeWyQoQI_cV Training videos]'''

Equipment info in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=440 LabManager] - '''requires login'''

===Exposure dose and defocus===
[[Specific Process Knowledge/Lithography/Resist#Aligner:_Maskless_02|Information on UV exposure dose]]

===[[Specific Process Knowledge/Lithography/Aligners/Aligner: Maskless 02 processing|Process information]]===
*[[Specific_Process_Knowledge/Lithography/Aligners/Aligner:_Maskless_02_processing#Exposure_technology|Exposure technology]]
*[[Specific_Process_Knowledge/Lithography/Aligners/Aligner:_Maskless_02_processing#Process_Parameters|Process Parameters]]
*[[Specific_Process_Knowledge/Lithography/Aligners/Aligner:_Maskless_02_processing#Features|Features]]
*[[Specific_Process_Knowledge/Lithography/Aligners/Aligner:_Maskless_02_processing#Alignment|Alignment]]

===Quality Control (QC)===
{| border="1" cellspacing="2" cellpadding="2" colspan="3"
|bgcolor="#98FB98" |'''Quality Control (QC) for Aligner: Maskless 02 (MLA2) - Dose and Defoc'''
|-
|
*[http://labmanager.dtu.dk/d4Show.php?id=5644&mach=440 The QC procedure for Aligner: Maskless 02 (MLA2)] - '''requires login'''<br>
*[https://labmanager.dtu.dk/view_binary.php?type=data&mach=440 The newest QC data for Aligner: Maskless 02 (MLA2)] - '''requires login'''
{| {{table}}
| align="center" | 
{| border="1" cellspacing="1" cellpadding="2"  align="center" style="width:300px"

! QC Recipe:
! Dose and defocus test on 1.5µm AZ5214E
|- 
|Dose test
|Last QC value ± 20 mJ/cm<sup>2</sup> (9 steps total)
|- 
|Defoc test
|Last QC value ± 8 (9 steps total)
|-
|}
| align="center" valign="top"|
{| border="2" cellspacing="1" cellpadding="2" align="center" style="width:400px"
!QC limits
!Aligner: Maskless 02 (MLA2)
|-
|Dose
|none
|-
|Defoc
|none
|-
|}
|-
|}
Dose and defoc values are reported in the QC data sheet.
|}
<br/>
{| border="1" cellspacing="2" cellpadding="2" colspan="3"
|bgcolor="#98FB98" |'''Quality Control (QC) for Aligner: Maskless 02 (MLA2) - Alignment'''
|-
|
*[http://labmanager.dtu.dk/d4Show.php?id=5644&mach=440 The QC procedure for Aligner: Maskless 02 (MLA2)] - '''requires login'''<br>
*[https://labmanager.dtu.dk/view_binary.php?type=data&mach=440 The newest QC data for Aligner: Maskless 02 (MLA2)] - '''requires login'''
{| {{table}}
| align="center" | 
{| border="1" cellspacing="1" cellpadding="2"  align="center" style="width:300px"

! QC Recipe:
! Alignment accuracy test
|- 
|Topside alignment
|Expose an overlay design after automatic alignment to 4 alignment marks using the High Res camera and applying scaling and shearing.

Alignment accuracy in 9 points across a 100mm wafer is measured, the average alignment error is reported.
|- 
|Backside alignment
|Expose an overlay design after automatic alignment to 4 backside alignment marks and applying scaling and shearing. Rotate the wafer 180° and repeat.

Alignment accuracy in 9 points across a 100mm wafer is measured, half the average alignment error is reported.
|-
|}
| align="center" valign="top"|
{| border="2" cellspacing="1" cellpadding="2" align="center" style="width:400px"
!QC limits
!Aligner: Maskless 02 (MLA2)
|-
|Topside alignment error
|>0.5µm
|-
|Backside alignment error
|>1µm
|-
|}
|-
|}
Camera offsets will be adjusted if alignment error is outside the limit.
|}
<br/>

=== Equipment performance and process related parameters ===

{|border="1" cellspacing="1" cellpadding="10" style="text-align:left;" 


!style="background:silver; color:black;" align="center" width="60"|Purpose 
|style="background:LightGrey; color:black"|
|style="background:WhiteSmoke; color:black" colspan="2"|
Alignment and UV exposure 
|-

!style="background:silver; color:black" align="left" valign="center" rowspan="6"|Performance

|style="background:LightGrey; color:black"|Exposure mode
|style="background:WhiteSmoke; color:black" colspan="2"|
Projection
|-
| style="background:LightGrey; color:black"|Exposure light
|style="background:WhiteSmoke; color:black" colspan="2"|
*375 nm<br>
(laser diode arrays)
|-
|style="background:LightGrey; color:black"|Focusing method
|style="background:WhiteSmoke; color:black" colspan="2"|
*Optical
*Pneumatic
|-
|style="background:LightGrey; color:black"|Minimum structure size
|style="background:WhiteSmoke; color:black" colspan="2"|
down to 1 µm
|-
|style="background:LightGrey; color:black"|Design formats
|style="background:WhiteSmoke; color:black" colspan="2"|
*'''GDS-II'''
*CIF
*DXF
*Gerber
*HIMT format
|-
|style="background:LightGrey; color:black"|Alignment modes
|style="background:WhiteSmoke; color:black" colspan="2"|
*Top side alignment, ±0.5µm
*Backside alignment, ±1.0µm
*Field alignment (chip-by-chip TSA), ±0.25µm (within 5x5mm<sup>2</sup> area)

|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
|style="background:LightGrey; color:black"|Substrate size
|style="background:WhiteSmoke; color:black" colspan="2"|
* maximum writing area: 200x200 mm<sup>2</sup>
* 200 mm wafer
* 150 mm wafer
* 100 mm wafer
* 50 mm wafer
* pieces down to 3x3 mm<sup>2</sup> <sup>1)</sup>
|-
| style="background:LightGrey; color:black"|Allowed materials
|style="background:WhiteSmoke; color:black" colspan="2"|
All cleanroom materials
<br>Total height variation across the substrate must be less than ±90 µm - including wafer bow
|-
|style="background:LightGrey; color:black"|Batch
|style="background:WhiteSmoke; color:black" colspan="2"|
1 
|- 
|}

<sup>1)</sup> with optical autofocus

<br clear="all" />

==Aligner: Maskless 03==
[[File:Aligner MLA 3.jpg|400px|thumb|Aligner: Maskless 03 is located in E-5.]]
MLA150 WMII maskless aligner from Heidelberg Instruments GmbH, installed 2020.


'''Special features:'''
*Backside Alignment
*Advanced Field Alignment Mode for alignment to individual chips/devices on the substrate
*Separate conversion PC (Power PC)

Link to information about [[Specific_Process_Knowledge/Pattern_Design#Alignment_marks|alignment mark design]].

'''[https://www.youtube.com/playlist?list=PLjWVU97LayHAiCabstMfAUeeWyQoQI_cV Training videos]'''

Equipment info in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=464 LabManager] - '''requires login'''

===Exposure dose and defocus===
[[Specific Process Knowledge/Lithography/Resist#Aligner:_Maskless_03|Information on UV exposure dose]]

===[[Specific Process Knowledge/Lithography/Aligners/Aligner: Maskless 03 processing|Process information]]===
*[[Specific_Process_Knowledge/Lithography/Aligners/Aligner:_Maskless_03_processing#Exposure_technology|Exposure technology]]
*[[Specific_Process_Knowledge/Lithography/Aligners/Aligner:_Maskless_03_processing#Process_Parameters|Process Parameters]]
*[[Specific_Process_Knowledge/Lithography/Aligners/Aligner:_Maskless_03_processing#Features|Features]]
*[[Specific_Process_Knowledge/Lithography/Aligners/Aligner:_Maskless_03_processing#Alignment|Alignment]]

===Quality Control (QC)===
{| border="1" cellspacing="2" cellpadding="2" colspan="3"
|bgcolor="#98FB98" |'''Quality Control (QC) for Aligner: Maskless 03 (MLA3) - Dose and Defoc'''
|-
|
*[http://labmanager.dtu.dk/d4Show.php?id=5644&mach=464 The QC procedure for Aligner: Maskless 03 (MLA3)] - '''requires login'''<br>
*[https://labmanager.dtu.dk/view_binary.php?type=data&mach=464 The newest QC data for Aligner: Maskless 03 (MLA3)] - '''requires login'''
{| {{table}}
| align="center" | 
{| border="1" cellspacing="1" cellpadding="2"  align="center" style="width:300px"

! QC Recipe:
! Dose and defocus test on 1.5µm AZ5214E
|- 
|Dose test
|Last QC value ± 20 mJ/cm<sup>2</sup> (9 steps total)
|- 
|Defoc test
|Last QC value ± 8 (9 steps total)
|-
|}
| align="center" valign="top"|
{| border="2" cellspacing="1" cellpadding="2" align="center" style="width:400px"
!QC limits
!Aligner: Maskless 03 (MLA3)
|-
|Dose
|none
|-
|Defoc
|none
|-
|}
|-
|}
Dose and defoc values are reported in the QC data sheet.
|}
<br/>
{| border="1" cellspacing="2" cellpadding="2" colspan="3"
|bgcolor="#98FB98" |'''Quality Control (QC) for Aligner: Maskless 03 (MLA3) - Alignment'''
|-
|
*[http://labmanager.dtu.dk/d4Show.php?id=5644&mach=464 The QC procedure for Aligner: Maskless 03 (MLA3)] - '''requires login'''<br>
*[https://labmanager.dtu.dk/view_binary.php?type=data&mach=464 The newest QC data for Aligner: Maskless 03 (MLA3)] - '''requires login'''
{| {{table}}
| align="center" | 
{| border="1" cellspacing="1" cellpadding="2"  align="center" style="width:300px"

! QC Recipe:
! Alignment accuracy test
|- 
|Topside alignment
|Expose an overlay design after automatic alignment to 4 alignment marks using the High Res camera and applying scaling and shearing.

Alignment accuracy in 9 points across a 100mm wafer is measured, the average alignment error is reported.
|- 
|Backside alignment
|Expose an overlay design after automatic alignment to 4 backside alignment marks and applying scaling and shearing. Rotate the wafer 180° and repeat.

Alignment accuracy in 9 points across a 100mm wafer is measured, half the average alignment error is reported.
|-
|}
| align="center" valign="top"|
{| border="2" cellspacing="1" cellpadding="2" align="center" style="width:400px"
!QC limits
!Aligner: Maskless 03 (MLA3)
|-
|Topside alignment error
|>0.5µm
|-
|Backside alignment error
|>1µm
|-
|}
|-
|}
Camera offsets will be adjusted if alignment error is outside the limit.
|}
<br/>

=== Equipment performance and process related parameters ===

{|border="1" cellspacing="1" cellpadding="10" style="text-align:left;" 


!style="background:silver; color:black;" align="center" width="60"|Purpose 
|style="background:LightGrey; color:black"|
|style="background:WhiteSmoke; color:black" colspan="2"|
Alignment and UV exposure 
|-

!style="background:silver; color:black" align="left" valign="center" rowspan="6"|Performance

|style="background:LightGrey; color:black"|Exposure mode
|style="background:WhiteSmoke; color:black" colspan="2"|
Projection
|-
| style="background:LightGrey; color:black"|Exposure light
|style="background:WhiteSmoke; color:black" colspan="2"|
405nm<br>(laser diode array)
|-
|style="background:LightGrey; color:black"|Focusing method
|style="background:WhiteSmoke; color:black" colspan="2"|
Pneumatic
|-
|style="background:LightGrey; color:black"|Minimum structure size
|style="background:WhiteSmoke; color:black" colspan="2"|
down to 1 µm
|-
|style="background:LightGrey; color:black"|Design formats
|style="background:WhiteSmoke; color:black" colspan="2"|
*'''GDS-II'''
*CIF
*DXF
*Gerber
*HIMT format
|-
|style="background:LightGrey; color:black"|Alignment modes
|style="background:WhiteSmoke; color:black" colspan="2"|
*Top side alignment, ±0.5µm
*Backside alignment, ±1.0µm
*Field alignment (chip-by-chip TSA), ±0.25µm (within 5x5mm<sup>2</sup> area)

|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
|style="background:LightGrey; color:black"|Substrate size
|style="background:WhiteSmoke; color:black" colspan="2"|
* maximum writing area: 150x150 mm<sup>2</sup>
* 150 mm wafer
* 100 mm wafer
* 50 mm wafer
* pieces down to 5x5 mm<sup>2</sup>
|-
| style="background:LightGrey; color:black"|Allowed materials
|style="background:WhiteSmoke; color:black" colspan="2"|
All cleanroom materials
<br>Total height variation across the substrate must be less than ±90 µm - including wafer bow
|-
|style="background:LightGrey; color:black"|Batch
|style="background:WhiteSmoke; color:black" colspan="2"|
1 
|- 
|}

<br clear="all" />

== Aligner: Maskless 04 ==
[[Image:Heidelberg_uMLA.JPG|400px|thumb|Aligner: Maskless 04 is located in PolyFabLab in building 347.]]

The logon password for the PC is "mla" (without quotation marks).

The µMLA Tabletop Maskless Aligner from Heidelberg, located in PolyFabLab in building 347, is a direct exposure lithography tool installed in 2024. 
It is a UV exposure system, that exposes the patterns directly on photosensitive resists on chips, 2, 4, and 6 inch substrates, without prior fabrication of a mask. 
The system offers top side alignment with good accuracy.

Link to information about [[Specific_Process_Knowledge/Pattern_Design#Alignment_marks|alignment mark design]].

The user manual and contact information can be found in LabManager:

Equipment info in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=544 LabManager] - '''requires login'''
<!--
===Exposure dose and defocus===
[[Specific Process Knowledge/Lithography/Resist#Aligner:_Maskless_04|Information on UV exposure dose]]
-->

===[[Specific Process Knowledge/Lithography/Aligners/Aligner: Maskless 04 processing|Process information]]===
*[[Specific_Process_Knowledge/Lithography/Aligners/Aligner:_Maskless_04_processing#Exposure_technology|Exposure technology]]
*[[Specific_Process_Knowledge/Lithography/Aligners/Aligner:_Maskless_04_processing#Process_Parameters|Process parameters]]
*[[Specific_Process_Knowledge/Lithography/Aligners/Aligner:_Maskless_04_processing#Substrate_positioning|Substrate positioning]]
*[[Specific_Process_Knowledge/Lithography/Aligners/Aligner:_Maskless_04_processing#Alignment|Alignment]]

=== Equipment performance and process related parameters ===

{|border="1" cellspacing="1" cellpadding="10" style="text-align:left;" 

!style="background:silver; color:black;" align="center" width="60"|Purpose 
|style="background:LightGrey; color:black"|
|style="background:WhiteSmoke; color:black" colspan="2"|
Alignment and UV exposure 
|-

!style="background:silver; color:black" align="left" valign="center" rowspan="6"|Performance

|style="background:LightGrey; color:black"|Exposure mode
|style="background:WhiteSmoke; color:black" colspan="2"|
*Projection (Raster mode)
*Direct laser writing (Vector mode)
|-
| style="background:LightGrey; color:black"|Exposure light
|style="background:WhiteSmoke; color:black" colspan="2"|
*365nm (LED) for projection
*405nm (diode laser) for direct laser writing
|-
|style="background:LightGrey; color:black"|Focusing method
|style="background:WhiteSmoke; color:black" colspan="2"|
Pneumatic or Optical
|-
|style="background:LightGrey; color:black"|Minimum structure size
|style="background:WhiteSmoke; color:black" colspan="2"|
Down to 1µm
|-
|style="background:LightGrey; color:black"|Design formats
|style="background:WhiteSmoke; color:black" colspan="2"|
*GDS-II
*CIF
*DXF
*Gerber
*HIMT format
|-
|style="background:LightGrey; color:black"|Alignment modes
|style="background:WhiteSmoke; color:black" colspan="2"|
Top side only, ±1µm

|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
|style="background:LightGrey; color:black"|Substrate size
|style="background:WhiteSmoke; color:black" colspan="2"|
* maximum writing area: 150x150 mm<sup>2</sup>
* 150 mm wafer
* 100 mm wafer
* 50 mm wafer
* pieces down to 3x3 mm<sup>2</sup> with optical autofocus
|-
| style="background:LightGrey; color:black"|Allowed materials
|style="background:WhiteSmoke; color:black" colspan="2"|
All PolyFabLab materials with sufficient stiffness and flatness.
<br>Total height variation across the substrate must be less than ±80 µm - including wafer bow
|-
|style="background:LightGrey; color:black"|Batch
|style="background:WhiteSmoke; color:black" colspan="2"|
1 
|- 
|}

<br clear="all" />

<!--
==Inclined UV Lamp==
[[Image:Inclined UV lamp_1.jpg|300x300px|right|thumb|Inclined UV lamp is placed in CX-1]]

The Inclined UV lamp is 1000 W Hg(Xe)lamp source designed for near UV, 350-450nm, mid UV, 260-320nm, and deep UV, 220-260nm exposures of resists and polymers. The exposure source can also be used to make an inclined exposure in air or in the media tank. The tool was purchased in February 2009 from Newport. The exposure lamp official name is Oriel Flood Exposure Source, unit 92540. All other parts of equipment: substrate and mask holder with media tank, exhaust box around the tool, timer controller, were designed and built at DTU Nanolab workshop.

The substrate and mask holder with a media tank was designed as part of Master Thesis of DTU Nanotech, Andres Kristensen group. The exhaust box was made for safety reasons and the timer/controller was built to control exposure time. 

The technical specification and the general outline of the equipment can be found in LabManager.   


The user manual(s), quality control procedure(s) and results and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=259 LabManager] - '''requires login'''
<br clear="all" />

=== Equipment performance and process related parameters ===

{|border="1" cellspacing="1" cellpadding="10" style="text-align:left;" 


!style="background:silver; color:black;" align="center" width="60"|Purpose 
|style="background:LightGrey; color:black"|
|style="background:WhiteSmoke; color:black" colspan="2"|
UV exposure 
|-

!style="background:silver; color:black" align="left" rowspan="5"|Performance

|style="background:LightGrey; color:black"|Exposure mode
|style="background:WhiteSmoke; color:black" colspan="2"|
*Flood exposure
*Proximity exposure with mask possible for 4inch substrate
*Inclined exposure
*Rotating exposure
|-
| style="background:LightGrey; color:black"|Exposure light/filters
|style="background:WhiteSmoke; color:black" colspan="2"|
* Near UV(350-450nm)
* Mid UV (260-320nm)
* Deep UV(220-260nm)

|-
|style="background:LightGrey; color:black"|Minimum structure size
|style="background:WhiteSmoke; color:black" colspan="2"|

|-
|style="background:LightGrey; color:black"|Mask size
|style="background:WhiteSmoke; color:black" colspan="2"|
5x5inch optinal
|-
|style="background:LightGrey; color:black"|Alignment modes
|style="background:WhiteSmoke; color:black" colspan="2"|
No alignment possible

|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
|style="background:LightGrey; color:black"|Substrate size
|style="background:WhiteSmoke; color:black" colspan="2"|
Up to 8inch substrates, different shapes 
|-
| style="background:LightGrey; color:black"|Allowed materials
|style="background:WhiteSmoke; color:black" colspan="2"|
All cleanroom materials
|-
|style="background:LightGrey; color:black"|Batch
|style="background:WhiteSmoke; color:black" colspan="2"|
1 
|- 
|}

<br clear="all" />
-->