View source for Specific Process Knowledge/Lithography/Coaters/GammaEbeam

==Spin Coater: Gamma E-beam and UV==

[[image:Gamma_4M_-_E-beam_&_UV_full.JPG|400px|right|thumb|Spin Coater: Gamma E-beam & UV in E-5]]

Spin Coater: Gamma E-beam and UV was installed at DTU Nanolab in June 2017. It is a Gamma 4M cluster from Süss MicroTec with spin coating, HMDS vapour priming, and baking modules. The system handles 2", 4", and 6" wafers without size conversion, using two separate coater stations.

The 2" coater station is equipped with 1 resist line, as well as 1 syringe line:
*AR-P 6200.09 (CSAR)
*Syringe, which can be used for various resists (anisole-based or PGMEA-based).

The 4"/6" coater station is equipped with 4 different resists lines: 
*AZ 5214E
*AZ MiR 701
*AR-P 6200.09 (CSAR)
*AZ 4562  

The processes that are available on the system are developed by Nanolab. Upon request, it is possible to establish new processes. Use of the syringe requires special training, and would as a starting point require batches in excess of 20 wafers.

'''[https://www.youtube.com/watch?v=3JhM3rmLVpA Training video]'''

The user manual, quality control procedures and results, user APVs, and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=417 LabManager] - '''requires login'''

===[[Specific Process Knowledge/Lithography/Coaters/Spin Coater: Gamma E-beam and UV processing|Process information]]===
*[[Specific Process Knowledge/Lithography/Coaters/Spin Coater: Gamma E-beam and UV processing#General_Process_Information|General Process information]]
*[[Specific_Process_Knowledge/Lithography/Coaters/Spin_Coater:_Gamma_E-beam_and_UV_processing#Quality_Control_(QC)|Quality Control (QC)]]
*[[Specific_Process_Knowledge/Lithography/Coaters/Spin_Coater:_Gamma_E-beam_and_UV_processing#Standard_Processes|Standard Processes:]]
*[[Specific_Process_Knowledge/Lithography/Coaters/Spin_Coater:_Gamma_E-beam_and_UV_processing#Syringe_Processes|Syringe Processes]]

=== Equipment performance and process related parameters ===

{| border="2" cellspacing="0" cellpadding="2" 

!style="background:silver; color:black;" align="center" width="60"|Purpose 
|style="background:LightGrey; color:black"|
|style="background:WhiteSmoke; color:black"|
*HMDS priming
*Spin coating of anisole based E-beam resists
*Spin coating of PGMEA based UV resists
*Soft baking
*Edge bead removal (CSAR and novolac-based UV resists) 
|-
!style="background:silver; color:black;" align="center" width="60"|Resist 
|style="background:LightGrey; color:black"|
|style="background:WhiteSmoke; color:black"|
* AR-P 6200.09 (CSAR)
* AZ 5214E
* AZ MiR 701 (29cps)
* AZ 4562
* 30cc syringe dispense
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Performance
|style="background:LightGrey; color:black"|HMDS contact angle
|style="background:WhiteSmoke; color:black"|
&nbsp; 60 - 80° (on Silicon)
|-
|style="background:LightGrey; color:black"|Coating thickness
|style="background:WhiteSmoke; color:black"|
* AR-P 6200.09 (CSAR): 170-500 nm
* AZ 5214E: 1.5-5 µm
* AZ MiR 701: 1.5-4 µm
* AZ 4562: 5-25 µm
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="5"|Process parameters
|style="background:LightGrey; color:black"|Priming temperature
|style="background:WhiteSmoke; color:black"|
&nbsp; 120 °C
|-
|style="background:LightGrey; color:black"|Spin speed
|style="background:WhiteSmoke; color:black"|
&nbsp; 10 - 6000 rpm
|-
|style="background:LightGrey; color:black"|Spin acceleration
|style="background:WhiteSmoke; color:black"|
&nbsp; 10 - 10000 rpm/s
|-
|style="background:LightGrey; color:black"|Hotplate temperature
|style="background:WhiteSmoke; color:black"|
&nbsp; 25 - 200 °C
|-
|style="background:LightGrey; color:black"|Cool plate temperature
|style="background:WhiteSmoke; color:black"|
&nbsp; 21 °C
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
|style="background:LightGrey; color:black"|Substrate size
|style="background:WhiteSmoke; color:black"|
* 50 mm wafers
* 100 mm wafers
* 150 mm wafers
|-
| style="background:LightGrey; color:black"|Allowed materials
|style="background:WhiteSmoke; color:black"|
&nbsp; Silicon, III-V, and glass

&nbsp; Resists and crystalbond are not allowed in the HMDS module
|-
|style="background:LightGrey; color:black"|Batch
|style="background:WhiteSmoke; color:black"|
&nbsp; 1 - 25 
|- 
|}

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