View source for Specific Process Knowledge/Lithography/Development

'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/Development click here]'''

==Development Comparison Table==

{| border="2" cellspacing="0" cellpadding="2" 

!colspan="2" border="none" style="background:silver; color:black;" align="center"|Equipment 
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/Development#SU8-Developer|SU8-Developer]]</b>
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/Development#Developer: E-beam|Developer: E-beam]]</b>
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/Development#Developer:_TMAH_Manual|Developer: TMAH Manual]]</b>
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/Development#Developer_TMAH_UV-lithography|Developer: TMAH UV-lithography]]</b>
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/DUVStepperLithography#Developer_TMAH_Stepper|Developer: TMAH Stepper]]</b>

|-
!style="background:silver; color:black" align="center" width="60"|Purpose 
|style="background:LightGrey; color:black"|


|style="background:WhiteSmoke; color:black" align="center"|
Development of
*SU-8
|style="background:WhiteSmoke; color:black" align="center" width="180"|
Development of
*CSAR
*Zep520A
|style="background:WhiteSmoke; color:black" align="center"|
Development of
*AZ nLOF
*AZ MiR 701
*AZ 5214E
*AZ 4562
*DUV resists
|style="background:WhiteSmoke; color:black" align="center"|
Development of
*AZ nLOF
*AZ MiR 701
*AZ 5214E
*AZ 4562
*DUV resists
Post-exposure baking
|style="background:WhiteSmoke; color:black" align="center"|
Development of
*DUV resists
Post-exposure baking

|-
!style="background:silver; color:black" align="center" width="60"|Developer 
|style="background:LightGrey; color:black"|

|style="background:WhiteSmoke; color:black" align="center"|
mr-Dev 600

(PGMEA)
|style="background:WhiteSmoke; color:black" align="center"|
N-50

AR600-546
|style="background:WhiteSmoke; color:black" align="center"|
AZ 726 MIF

(2.38% TMAH in water)
|style="background:WhiteSmoke; color:black" align="center"|
AZ 726 MIF

(2.38% TMAH in water)
|style="background:WhiteSmoke; color:black" align="center"|
AZ 726 MIF

(2.38% TMAH in water)

|-
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Method
|style="background:LightGrey; color:black"|Development

|style="background:WhiteSmoke; color:black" align="center"|
Submersion
|style="background:WhiteSmoke; color:black" align="center"|
Spray/Puddle
|style="background:WhiteSmoke; color:black" align="center"|
Spray/Puddle
|style="background:WhiteSmoke; color:black" align="center"|
Puddle
|style="background:WhiteSmoke; color:black" align="center"|
Puddle
|-
|style="background:LightGrey; color:black"|Handling

|style="background:WhiteSmoke; color:black" align="center"|
Single wafer holder
|style="background:WhiteSmoke; color:black" align="center"|
Vacuum chuck for 2",4" and 6" (the same) or chip "basket"
|style="background:WhiteSmoke; color:black" align="center"|
Edge handling chuck or chip "basket"
|style="background:WhiteSmoke; color:black" align="center"|
Vacuum chuck
|style="background:WhiteSmoke; color:black" align="center"|
Vacuum chuck
|-

!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameters
|style="background:LightGrey; color:black"|Temperature

|style="background:WhiteSmoke; color:black" align="center"|
Room temperature
|style="background:WhiteSmoke; color:black" align="center"|
Room temperature
|style="background:WhiteSmoke; color:black" align="center"|
Room temperature
|style="background:WhiteSmoke; color:black" align="center"|
Room temperature
|style="background:WhiteSmoke; color:black" align="center"|
Room temperature
|-
|style="background:LightGrey; color:black"|Agitation

|style="background:WhiteSmoke; color:black" align="center"|
Magnetic stirrer
|style="background:WhiteSmoke; color:black" align="center"|
Rotation
|style="background:WhiteSmoke; color:black" align="center"|
Rotation
|style="background:WhiteSmoke; color:black" align="center"|
Rotation
|style="background:WhiteSmoke; color:black" align="center"|
Rotation
|-
|style="background:LightGrey; color:black"|Rinse

|style="background:WhiteSmoke; color:black" align="center"|
IPA
|style="background:WhiteSmoke; color:black" align="center"|
IPA
|style="background:WhiteSmoke; color:black" align="center"|
DI water
|style="background:WhiteSmoke; color:black" align="center"|
DI water
|style="background:WhiteSmoke; color:black" align="center"|
DI water

|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
|style="background:LightGrey; color:black"|Substrate size

|style="background:WhiteSmoke; color:black" align="center"|
* 100 mm wafers
|style="background:WhiteSmoke; color:black" align="center"|
* Chips (5mm to 2")
* 50 mm wafers
* 100 mm wafers
* 150 mm wafers
|style="background:WhiteSmoke; color:black" align="center"|
* Chips (5mm to 2")
* 100 mm wafers
* 150 mm wafers
|style="background:WhiteSmoke; color:black" align="center"|
* 100 mm wafers
* 150 mm wafers
|style="background:WhiteSmoke; color:black" align="center"|
* 100 mm wafers
* 150 mm wafers
* 200 mm wafers (may require tool change)
|-
|style="background:LightGrey; color:black"|Allowed materials

|style="background:WhiteSmoke; color:black" align="center"|
Silicon and glass substrates

Film or pattern of all but Type IV

|style="background:WhiteSmoke; color:black" align="center"|
All cleanroom approved materials

|style="background:WhiteSmoke; color:black" align="center"|
All cleanroom approved materials 

Film or pattern of all types
|style="background:WhiteSmoke; color:black" align="center"|
Silicon and glass substrates

Film or pattern of all but Type IV
|style="background:WhiteSmoke; color:black" align="center"|
Silicon, III-V, and glass substrates

Film or pattern of all but Type IV
|-
|style="background:LightGrey; color:black"|Batch

|style="background:WhiteSmoke; color:black" align="center"|
1-6
|style="background:WhiteSmoke; color:black" align="center"|
1
|style="background:WhiteSmoke; color:black" align="center"|
1
|style="background:WhiteSmoke; color:black" align="center"|
1-25 
|style="background:WhiteSmoke; color:black" align="center"|
1-25
|- 
|}
<br clear="all" />

<!-- TARAN 2020-03-05
==Developer-1 and Developer-2==
[[Image:Developer1&2.jpg|300x300px|thumb|right|Developer-1 (right) and Developer-2 (left) are located in C-1]]

'''Feedback to this section''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/Development#Developer-1_and_Developer-2 click here]'''

===<span style="color:red">This equipment was decommissioned January 2017!</span>===

Developer-1 and Developer-2 are manual developer baths for submersion development of AZ 5214E and AZ 4562 resists in AZ 351B developer. The developer is mixed 1:5 in water by the user prior to development start, and the wafer cassette is agitated manually by the user during development. The development time is controlled manually by the user. After development, the substrates are rinsed with water in the bench.

'''The user APV, and contact information can be found in LabManager: [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=62 Developer-1] [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=63 Developer-2]'''

===Process information===

'''Standard development time using vigorous agitation:'''

'''AZ 5214E:'''
*1.5µm resist: 60 sec
*2.2µm resist: 70 sec
*4.2µm resist: 3 min
'''AZ 4562:'''
*10µm resist: 5 min

'''Standard development procedure:'''

*Before using one of developer baths, please check the "Litho4_Dev-7up-KOH" logbook to find out when they were last used. A fresh bath can be reused without problems. 
*The main rule is a developer made yesterday must be changed.
*During development, agitate the substrates by moving the carrier up and down.
*Rinse substrates with water for 4-5 min. after development.
*Spin-dry substrates or dry with nitrogen gun after rinsing.

====Procedure for making a new developer==== 

1. Switch off the heater, and dump the old developer.

2. 800ml "Developer AZ 351B" is mixed with 4000ml water in a special container in the fume hood. 

3. Fill the bath with the developer mixture, and heat it to 22°C before use.

=== Equipment performance and process related parameters ===

{| border="2" cellspacing="0" cellpadding="2" 

!style="background:silver; color:black;" align="center" width="60"|Purpose 
|style="background:LightGrey; color:black"|
|style="background:WhiteSmoke; color:black" align="center"|
Development of
*AZ 5214E
*AZ 4562
|-
!style="background:silver; color:black;" align="center" width="60"|Developer 
|style="background:LightGrey; color:black"|
|style="background:WhiteSmoke; color:black" align="center"|
AZ 351B diluted 1:5 in water

(NaOH and sodium borate salt)
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Method
|style="background:LightGrey; color:black"|Development
|style="background:WhiteSmoke; color:black" align="center"|
Submersion
|-
|style="background:LightGrey; color:black"|Handling
|style="background:WhiteSmoke; color:black" align="center"|
Cassette
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameters
|style="background:LightGrey; color:black"|Temperature
|style="background:WhiteSmoke; color:black" align="center"|
22°C
|-
|style="background:LightGrey; color:black"|Agitation
|style="background:WhiteSmoke; color:black" align="center"|
Manual
|-
|style="background:LightGrey; color:black"|Rinse
|style="background:WhiteSmoke; color:black" align="center"|
DI water
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
|style="background:LightGrey; color:black"|Substrate size
|style="background:WhiteSmoke; color:black" align="center"|
* 100 mm wafers
|-
| style="background:LightGrey; color:black"|Allowed materials
|style="background:WhiteSmoke; color:black" align="center"|
Silicon, glass, and polymer substrates

Film or pattern of all types
|-
|style="background:LightGrey; color:black"|Batch
|style="background:WhiteSmoke; color:black" align="center"|
1-8 
|- 
|}

<br clear="all" />
-->

<!-- TARAN 2020-03-05
==Developer-6inch==

[[image:6inchDeveloper.jpg|300x300px|right|thumb|The Developer: 6inch bench is located in E-4]]

'''Feedback to this section''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/Developers#Developer-6inch click here]'''

===<span style="color:red">This equipment will be decommissioned December 2019!</span>===

The Developer: 6inch bench is an automated developer bath for submersion development of AZ 5214E and AZ 4562 resists in AZ 351B developer. The developer is mixed 1:5 in water by the equipment prior to development start. The developer is circulated during development, and the wafer cassette may be agitated by a mechanical elevator. The development time is controlled manually by the user. After development, the substrates are rinsed with water in the bench.

'''The user manual, user APV, and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=189 LabManager]'''

===Process information===

'''Standard development time:'''

'''AZ 5214E:'''
*1.5µm resist: 60 sec
*2.2µm resist: 70 sec
*4.2µm resist: 3 min
'''AZ 4562:'''
*10µm resist: 5 min

=== Equipment performance and process related parameters ===

{| border="2" cellspacing="0" cellpadding="2" 

!style="background:silver; color:black;" align="center" width="60"|Purpose 
|style="background:LightGrey; color:black"|
|style="background:WhiteSmoke; color:black" align="center"|
Development of
*AZ 5214E
*AZ 4562
|-
!style="background:silver; color:black;" align="center" width="60"|Developer 
|style="background:LightGrey; color:black"|
|style="background:WhiteSmoke; color:black" align="center"|
AZ 351B diluted 1:5 in water

(NaOH and sodium borate salt)
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Method
|style="background:LightGrey; color:black"|Development
|style="background:WhiteSmoke; color:black" align="center"|
Submersion
|-
|style="background:LightGrey; color:black"|Handling
|style="background:WhiteSmoke; color:black" align="center"|
Cassette
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameters
|style="background:LightGrey; color:black"|Temperature
|style="background:WhiteSmoke; color:black" align="center"|
22°C
|-
|style="background:LightGrey; color:black"|Agitation
|style="background:WhiteSmoke; color:black" align="center"|
Circulation and mechanical
|-
|style="background:LightGrey; color:black"|Rinse
|style="background:WhiteSmoke; color:black" align="center"|
DI water
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
|style="background:LightGrey; color:black"|Substrate size
|style="background:WhiteSmoke; color:black" align="center"|
* 100 mm wafers
* 150 mm wafers
|-
| style="background:LightGrey; color:black"|Allowed materials
|style="background:WhiteSmoke; color:black" align="center"|
Silicon, glass, and polymer substrates

Film or pattern of all types
|-
|style="background:LightGrey; color:black"|Batch
|style="background:WhiteSmoke; color:black" align="center"|
1-25 
|- 
|}

<br clear="all" />
-->

==SU8-Developer==
[[Image:SU-8developer.jpg|300x300px|right|thumb|The SU8-Developer bench is located in C-1]]

'''Feedback to this section''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/Development#SU8-Developer click here]'''

The SU8-Developer bench is a manually operated chemical bench for submersion development of SU-8 photoresist in PGMEA (supplied in the cleanroom as mr-Dev 600). The development process is in two stages; one bath (FIRST) to dissolve the bulk of the resist, and a second, cleaner bath (FINAL) to finish the development. The development time is controlled manually by the user. After development, the substrates are rinsed with IPA and dried in the bench.

'''The user manual, user APV, and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=154 LabManager]'''

===Process information===
Several aspects of the outcome of SU-8 processing are affected by the development process. The lithographic resolution is affected by the time between PEB (post-exposure bake) and development, as the cross-linking process continues in the interface between exposed and unexposed regions even at room temperature. Cracks in the structures is affected by two things; the development time, and how much has previously been developed in the developer bath. Cracking is worse with longer development time, and worst in a new developer bath. The effect of the developer use quickly saturates (5-10 wafers). Finally, the stability of fine structures (high aspect ratio) is affected by the rinse after development, as the lower surface tension of IPA compared to PGMEA reduces pattern collapse during drying.

Development time is strongly dependent on the SU-8 thickness. 
*Minimum development time: 1 min per 20µm in FIRST
Suggestions:
*2-5µm: 2 min. in FIRST; 2 min. in FINAL
*40µm: 5 min. in FIRST; 5 min. in FINAL (however, 3 min. in FIRST and 2 min. in FINAL is sufficient)
*180-250µm: 15 min. in FIRST; 15 min. in FINAL

=== Equipment performance and process related parameters ===

{| border="2" cellspacing="0" cellpadding="2" 


!style="background:silver; color:black;" align="center" width="60"|Purpose 
|style="background:LightGrey; color:black"|
|style="background:WhiteSmoke; color:black" align="center"|
Development of
*SU-8
|-
!style="background:silver; color:black;" align="center" width="60"|Developer 
|style="background:LightGrey; color:black"|
|style="background:WhiteSmoke; color:black" align="center"|
mr-Dev 600

(PGMEA)
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Method
|style="background:LightGrey; color:black"|Development
|style="background:WhiteSmoke; color:black" align="center"|
Submersion
|-
|style="background:LightGrey; color:black"|Handling
|style="background:WhiteSmoke; color:black" align="center"|
Single wafer holder
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameters
|style="background:LightGrey; color:black"|Temperature
|style="background:WhiteSmoke; color:black" align="center"|
Room temperature
|-
|style="background:LightGrey; color:black"|Agitation
|style="background:WhiteSmoke; color:black" align="center"|
Magnetic stirrer
|-
|style="background:LightGrey; color:black"|Rinse
|style="background:WhiteSmoke; color:black" align="center"|
IPA
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
|style="background:LightGrey; color:black"|Substrate size
|style="background:WhiteSmoke; color:black" align="center"|
* 100 mm wafers
150 mm wafer is possible if the level is high enough
|-
| style="background:LightGrey; color:black"|Allowed materials
|style="background:WhiteSmoke; color:black" align="center"|
Silicon and glass substrates

Film or pattern of all but Type IV
|-
|style="background:LightGrey; color:black"|Batch
|style="background:WhiteSmoke; color:black" align="center"|
1-6 
|- 
|}

<br clear="all" />

==Developer: E-beam==
[[Image:IMG 2464.JPG|300×300px|right|thumb|Developer: E-beam is located in E-4]]

'''Feedback to this section''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/Development#Developer:_E-beam click here]'''

Developer: E-beam is a manually operated, single substrate or chip spray-puddle developer. It uses the N50 or AR 600-546 developers and IPA for rinsing. The substrates or chips are loaded manually one by one into the developer. Developer dispense, puddle time, IPA rinse, and drying is performed automatically by the equipment.

The machine is setup to agitate and be stationary to enhance the development uniformity - this is a ongoing process.

'''[https://www.youtube.com/watch?v=btinNzYnLnY Training video]''' (for Developer: TMAH Manual, but it is the same model)

'''The user manual, user APV, and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=324 LabManager]'''

===Process information===

All recipes are single puddle.
N50 and 546 denotes the developer used (546 is short for AR 600- 546).
The first step is pressurizing the canister so nothing will happen visually.
Please watch if the developer and rinsing starts. If not try to restart the machine by pressing the EMO and turning it on again. 
The spray is 8-10 s and will start the development process hence the short recipes (10s and 30s.) have been adjusted according to this.

'''Process recipes'''
*546 10s: 10s. Development Rinse and dry.
*546 30s: 60s. Development Rinse and dry.
*546 60s: 60s. Development Rinse and dry.
*546 180s: 180s. Development Rinse and dry.
*N50 10s: 10s. Development Rinse and dry.
*N50 30s: 30s. Development Rinse and dry.
*N50 60s: 60s. Development Rinse and dry.
*N50 90s: 90s. Development Rinse and dry.
*N50 120s: 120s. Development Rinse and dry.
*N50 180s: 180s. Development Rinse and dry.
*N50 300s: 300s. Development Rinse and dry.
*N50 180s6": Test for changing the agitation for 6" uniformity 180s. Development Rinse and dry.
*Testdev: The time can be modified 60s. Development Rinse and dry on AR 600-546.
*Rinse: Rinse and dry.

'''Utility recipes'''
*UTIL-DR: Dome rinse.
*UTIL-BE: Bottle empty. Nanolab use only.

=== Equipment performance and process related parameters ===

{| border="2" cellspacing="0" cellpadding="2" 

|-
!style="background:silver; color:black;" align="center" width="60"|Purpose 
|style="background:LightGrey; color:black"|
|style="background:WhiteSmoke; color:black" align="center"|
Development of
*CSAR
*ZEP520A


|-
!style="background:silver; color:black;" align="center" width="60"|Developer 
|style="background:LightGrey; color:black"|
|style="background:WhiteSmoke; color:black" align="center"|
*AR 600 - 546 (developer X AR 600-54/6) used for CSAR 6200 series
*ZED N-50 used for Zep520A resists

|-
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Method
|style="background:LightGrey; color:black"|Development
|style="background:WhiteSmoke; color:black" align="center"|
Spray/Puddle
|-
|style="background:LightGrey; color:black"|Handling
|style="background:WhiteSmoke; color:black" align="center"|
Vacuum chuck for 2",4" or 6" wafers and chip "basket"
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameters
|style="background:LightGrey; color:black"|Temperature
|style="background:WhiteSmoke; color:black" align="center"|
Room temperature
|-
|style="background:LightGrey; color:black"|Agitation
|style="background:WhiteSmoke; color:black" align="center"|
Yes 15rpm back and forth
|-
|style="background:LightGrey; color:black"|Rinse
|style="background:WhiteSmoke; color:black" align="center"|
IPA - Isopropanol
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
|style="background:LightGrey; color:black"|Substrate size
|style="background:WhiteSmoke; color:black" align="center"|
* Chips (6-60 mm)
* 50 mm wafers
* 100 mm wafers
* 150 mm wafers
|-
| style="background:LightGrey; color:black"|Allowed materials
|style="background:WhiteSmoke; color:black" align="center"|
All cleanroom approved materials 

Film or pattern of all types
|-
|style="background:LightGrey; color:black"|Batch
|style="background:WhiteSmoke; color:black" align="center"|
1 
|- 
|}

<br clear="all" />

==Developer: TMAH Manual==
[[Image:IMG 2464.JPG|300×300px|right|thumb|Developer: TMAH Manual is located in E-4]]

'''Feedback to this section''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/Development#Developer:_TMAH_Manual click here]'''

Developer: TMAH Manual is a manually operated, single substrate or chip spray-puddle developer. It uses the TMAH based AZ 726 MIF developer (2.38 % TMAH in  water with a small amount of wetting agent). The substrates or chips are loaded manually one by one into the developer. Developer dispense, puddle time, water rinse, and drying is performed automatically by the equipment.

The spray nozzle makes it difficult to build up a perfect puddle on 4" or 6" substrates which affects the effectiveness and uniformity of the development. Pre-wetting during dispense or agitation during development may give better results.

'''[https://www.youtube.com/watch?v=btinNzYnLnY Training video]'''

'''The user manual, user APV, and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=324 LabManager]'''

===Process information===

'''Process recipes'''
*DP 2x60s: Double puddle, 2 times 60s. Rinse and dry.
*MP 4x60s: Multiple puddle, 4 times 60s. Rinse and dry.
*SP 120s: Single puddle, 120s. Rinse and dry.
*SP 15s: Single puddle, 15s. Rinse and dry.
*SP 30s: Single puddle, 30s. Rinse and dry.
*SP 60s: Single puddle, 60s. Rinse and dry.

'''Utility recipes'''
*UTIL-DR: Dome rinse.
*UTIL-BE: Bottle empty. Nanolab use only.

=== Equipment performance and process related parameters ===

{| border="2" cellspacing="0" cellpadding="2" 


!style="background:silver; color:black;" align="center" width="60"|Purpose 
|style="background:LightGrey; color:black"|
|style="background:WhiteSmoke; color:black" align="center"|
Development of
*AZ nLOF
*AZ MiR 701
*AZ 5214E
*AZ 4562
*DUV resists
|-
!style="background:silver; color:black;" align="center" width="60"|Developer 
|style="background:LightGrey; color:black"|
|style="background:WhiteSmoke; color:black" align="center"|
AZ 726 MIF

(2.38% TMAH in water)
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Method
|style="background:LightGrey; color:black"|Development
|style="background:WhiteSmoke; color:black" align="center"|
Spray/Puddle
|-
|style="background:LightGrey; color:black"|Handling
|style="background:WhiteSmoke; color:black" align="center"|
Edge handling chuck or chip "basket"
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameters
|style="background:LightGrey; color:black"|Temperature
|style="background:WhiteSmoke; color:black" align="center"|
Room temperature
|-
|style="background:LightGrey; color:black"|Agitation
|style="background:WhiteSmoke; color:black" align="center"|
none
|-
|style="background:LightGrey; color:black"|Rinse
|style="background:WhiteSmoke; color:black" align="center"|
DI water
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
|style="background:LightGrey; color:black"|Substrate size
|style="background:WhiteSmoke; color:black" align="center"|
* Chips (6-60 mm)
* 100 mm wafers
* 150 mm wafers
|-
| style="background:LightGrey; color:black"|Allowed materials
|style="background:WhiteSmoke; color:black" align="center"|
All cleanroom approved materials 

Film or pattern of all types
|-
|style="background:LightGrey; color:black"|Batch
|style="background:WhiteSmoke; color:black" align="center"|
1 
|- 
|}

<br clear="all" />

==Developer TMAH UV-lithography==

[[Image:SUSS DEV.JPG|300x300px|right|thumb|Developer: TMAH UV-lithography is located in E-4]]

'''Feedback to this section''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/Development#Developer_TMAH_UV-lithography click here]'''

Developer TMAH UV-lithography was released Q4 2014.

'''[https://www.youtube.com/watch?v=fs9DRH0Eo3k Training video]'''

'''The user manual, user APV, and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=329 LabManager]'''

===Process information===

[[Specific Process Knowledge/Lithography/Development/Developer TMAH UV-lithography processing|General process information]]

[[Specific Process Knowledge/Lithography/Development/Developer TMAH UV-lithography_processing#Process recommendations|Process recommendations]]

[[Specific Process Knowledge/Lithography/Development/Developer TMAH UV-lithography processing#Standard Processes|Standard processes]]

=== Equipment performance and process related parameters ===

{| border="2" cellspacing="0" cellpadding="2" 

!style="background:silver; color:black;" align="center" width="60"|Purpose 
|style="background:LightGrey; color:black"|
|style="background:WhiteSmoke; color:black" align="center"|
Development of
*AZ nLOF
*AZ MiR 701
*AZ 5214E
*AZ 4562
*DUV resists
|-
!style="background:silver; color:black;" align="center" width="60"|Developer 
|style="background:LightGrey; color:black"|
|style="background:WhiteSmoke; color:black" align="center"|
AZ 726 MIF

(2.38% TMAH in water)
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Method
|style="background:LightGrey; color:black"|Development
|style="background:WhiteSmoke; color:black" align="center"|
Puddle
|-
|style="background:LightGrey; color:black"|Handling
|style="background:WhiteSmoke; color:black" align="center"|
Vacuum chuck
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameters
|style="background:LightGrey; color:black"|Temperature
|style="background:WhiteSmoke; color:black" align="center"|
Room temperature
|-
|style="background:LightGrey; color:black"|Agitation
|style="background:WhiteSmoke; color:black" align="center"|
Rotation
|-
|style="background:LightGrey; color:black"|Rinse
|style="background:WhiteSmoke; color:black" align="center"|
DI water
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
|style="background:LightGrey; color:black"|Substrate size
|style="background:WhiteSmoke; color:black" align="center"|
* 100 mm wafers
* 150 mm wafers
|-
| style="background:LightGrey; color:black"|Allowed materials
|style="background:WhiteSmoke; color:black" align="center"|
Silicon and glass substrates

Film or pattern of all except Type IV
|-
|style="background:LightGrey; color:black"|Batch
|style="background:WhiteSmoke; color:black" align="center"|
1-25 
|- 
|}

<br clear="all" />