Specific Process Knowledge/Lithography/Descum

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Plasma Asher 1

Plasma asher 1 was decommissioned 2024-12-02.

Plasma Asher 2

Plasma asher 2 was decommissioned 2024-12-02.

Plasma Asher 3: Descum

The user manual(s), quality control procedure(s) and results and contact information can be found in LabManager - requires login

Plasma Asher 3 is specifically used for controlled descum process after lithography. Please note that you only can process a single 100 mm wafer, or one small sample, at a time. The plasma asher is equipped with 2 gaslines: oxygen and nitrogen, but all standard processes use only oxygen (as recommended by Diener).

Ashing of AZ MiR701 resist:
You can use two different descum process developments: you can either change power settings or processing chamber pressure.

Testing different power settings:

Descum results for different power settings

Recipe settings:

• O2 flow: 5 sccm
• N2 flow: 0
• Pressure: 0.2 mbar
• Power: Varied

Experiment parameters:

FW/REV C2/C1 Power recipe 1 50/0 52/31 50% recipe 2 100/0 53/31 100% recipe 3 20/0 51/34 20%

Testing different pressure settings:

Descum results for different pressure settings

Recipe settings:

• O2 flow: varied
• N2 flow: 0
• Pressure: varied
• Power: V100% (100 W)

Experiment parameters:

FW/REV C2/C1 Oxygen Pressure recipe 1 100/0 53/31 5 0,2 recipe 2 100/0 37/38 45 0,8

Ashing of AZ5214E resist:

Descum results for different pressure settings

Recipe settings:

• O2 flow: varied
• N2 flow: 0
• Pressure: varied
• Power: V100% (100 W)

Experiment parameters:

FW/REV C2/C1 Oxygen Pressure recipe 1 100/0 53/31 17 0,4 recipe 2 100/0 37/39 45 0,8

Plasma Asher 4

Coming soon

Plasma Asher 5

Coming soon