Aligner: Maskless 03
Aligner: Maskless 03 is located in E-5.
MLA150 WMII maskless aligner from Heidelberg Instruments GmbH, installed 2020.
Special features:
- Backside Alignment
- Advanced Field Alignment Mode for alignment to individual chips/devices on the substrate
- Separate conversion PC (Power PC)
Link to information about alignment mark design.
Training videos
Equipment info in LabManager - requires login
Exposure dose and defocus
Information on UV exposure dose
Quality Control (QC)
| Quality Control (QC) for Aligner: Maskless 03 (MLA3) - Dose and Defoc
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| QC Recipe:
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Dose and defocus test on 1.5µm AZ5214E
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| Dose test
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Last QC value ± 20 mJ/cm2 (9 steps total)
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| Defoc test
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Last QC value ± 8 (9 steps total)
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| QC limits
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Aligner: Maskless 03 (MLA3)
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| Dose
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none
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| Defoc
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none
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Dose and defoc values are reported in the QC data sheet.
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| Quality Control (QC) for Aligner: Maskless 03 (MLA3) - Alignment
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| QC Recipe:
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Alignment accuracy test
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| Topside alignment
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Expose an overlay design after automatic alignment to 4 alignment marks using the High Res camera and applying scaling and shearing.
Alignment accuracy in 9 points across a 100mm wafer is measured, the average alignment error is reported.
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| Backside alignment
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Expose an overlay design after automatic alignment to 4 backside alignment marks and applying scaling and shearing. Rotate the wafer 180° and repeat.
Alignment accuracy in 9 points across a 100mm wafer is measured, half the average alignment error is reported.
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| QC limits
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Aligner: Maskless 03 (MLA3)
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| Topside alignment error
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>0.5µm
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| Backside alignment error
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>1µm
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Camera offsets will be adjusted if alignment error is outside the limit.
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Equipment performance and process related parameters
| Purpose
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Alignment and UV exposure
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| Performance
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Exposure mode
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Projection
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| Exposure light
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405nm
(laser diode array)
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| Focusing method
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Pneumatic
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| Minimum structure size
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down to 1 µm
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| Design formats
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- GDS-II
- CIF
- DXF
- Gerber
- HIMT format
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| Alignment modes
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- Top side alignment, ±0.5µm
- Backside alignment, ±1.0µm
- Field alignment (chip-by-chip TSA), ±0.25µm (within 5x5mm2 area)
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| Substrates
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Substrate size
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- maximum writing area: 150x150 mm2
- 150 mm wafer
- 100 mm wafer
- 50 mm wafer
- pieces down to 5x5 mm2
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| Allowed materials
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All cleanroom materials
Total height variation across the substrate must be less than ±90 µm - including wafer bow
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| Batch
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1
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