Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide/Deposition of Silicon Oxide using PECVD
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At the moment DANCHIP has 3 PECVDs that can deposite silicon oxide with or without dopants of Boron, Phosphorous or Germanium. PECVD1 and PECVD3 are for silicon based processing. PECVD2 is for III-V processing and is described under III-V processing. Look at the PECVD page to learn more about the PECVDs at DANCHIP. Allthough PECVD1 and PECVD3 are very much alike you cannot count on the a recipe on one system will give exactly the same results on the other system.
Recipes on PECVD1 for deposition of silicon oxides
Recipes
| Recipe name | SiH4 flow [sccm] | N2O flow [sccm] | N2 flow [sccm] | B2H6 flow [sccm] | PH3 flow [sccm] | Pressure [mTorr] | Power [W] | Description |
| 1oxide/1ox_std/standard | 17 | 1600 | 0 | 0 | 0 | 400 | 380LF | Process control recipe. Developed for waveguides |
| 1PBSG | 17 | 1600 | 0 | 135 | 40 | 500 | 800LF | Developed for waveguide top cladding by Haiyan Ou @DTU Photonics'. |
| BGE_PBSG | 17 | 1600 | 0 | 240 | 60 | 500 | 800LF | Low stress PBSG |
Expected results
| Recipe name | Deposition rate [µm/min] | RI | Uniformity [%] | Comments |
| 1oxide/1ox_std/standard | ~0.193 | 1.46 | 2 | The latest measured values can be seen in the process control sheet in LabManager |
| 1PBSG | ~0.3 | 1.458@633nm |
Recipes on PECVD3 for deposition of silicon oxides
Recipes
| Recipe name | SiH4 flow [sccm] | N2O flow [sccm] | N2 flow [sccm] | B2H6 flow [sccm] | PH3 flow [sccm] | Pressure [mTorr] | Power [W] | Description |
| LFSiO | 12 | 1420 | 392 | 0 | 0 | 550 | 60 | Uniform silicon oxide |
| 1PBSG | 17 | 1600 | 0 | 135 | 40 | 500 | 800LF | BPSG glass for waveguide cladding layer |
LF=Low Frequency
Expected results
| Recipe name | Deposition rate [nm/min] | RI | Uniformity [%] |
| LFSiO | ~75 | ~1.48 | <1 |
| 1PBSG | ~228 nm/min | . | ~17% |
Recipes on PECVD3 for deposition of doped oxide
Recipes
| Recipe name | SiH4 flow [sccm] | N2 flow [sccm] | GeH4 flow [sccm] (scaled by 100) | B2H6 flow [sccm] | PH3 flow [sccm] | Pressure [mTorr] | Power [W] | Description |
| Core-Ge | 17 | 300 | 300 | 0 | 0 | 400 | 600 LF | Process for germanium doped core layer developed by Haiyan Ou from DTU Photonics
Annnealing: Anneal bond furnace, recipe "core1100" |
| Top-BPSG | 17 | 0 | 0 | 100 | 40 | 500 | 800 LF | Process for PBSG top clading layer developed by Haiyan Ou from DTU Photonics
Annnealing/oxidation: Anneal bond furnace, recipe "clad1000" |
Expected results
| Recipe name | Deposition rate [nm/min] | Refractive index |
| Core-Ge | ~188 nm/min | ~1.46969 |
| Top-BPSG | ~248 nm/min | ~1.458 |