Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide/Deposition of Silicon Oxide using PECVD: Difference between revisions
Appearance
No edit summary |
No edit summary |
||
| Line 34: | Line 34: | ||
|500 | |500 | ||
|800LF | |800LF | ||
|Developed for waveguide top cladding by ''Haiyan Ou @DTU Photonics' | |Developed for waveguide top cladding by ''Haiyan Ou @DTU Photonics'. | ||
|- | |- | ||
|BGE_PBSG | |BGE_PBSG | ||
| Line 149: | Line 149: | ||
|600 LF | |600 LF | ||
|Process for germanium doped core layer developed by Haiyan Ou from DTU Photonics | |Process for germanium doped core layer developed by Haiyan Ou from DTU Photonics | ||
Annnealing: Anneal bond furnace, recipe "core1100" | |||
|- | |- | ||
|Top-BPSG | |Top-BPSG | ||
| Line 159: | Line 160: | ||
|800 LF | |800 LF | ||
|Process for PBSG top clading layer developed by Haiyan Ou from DTU Photonics | |Process for PBSG top clading layer developed by Haiyan Ou from DTU Photonics | ||
Annnealing/oxidation: Anneal bond furnace, recipe "clad1000" | |||
|} | |} | ||