LabAdviser/Technology Research/Fabrication of Hyperbolic Metamaterials using Atomic Layer Deposition/AZO pillars: Difference between revisions
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The fabrication and characterization described below were conducted in <b>2013-2016 by Evgeniy Shkondin, DTU Nanolab</b>.<br> | The fabrication and characterization described below were conducted in <b>2013-2016 by Evgeniy Shkondin, DTU Nanolab</b>.<br> | ||
== Procces flow description == | |||
Double side polished (DSP), 150 mm (100) Si wafers were selected for device fabrication. They were RCA cleaned and later oxidized in a conventional quartz tube (furnace from Tempress) using a dry oxidation process based on O<sub>2</sub> at 1100 °C, resulting in a 200 nm SiO<sub>2</sub> layer on Si. Next, a 2 μm amorphous Si layer was deposited on the SiO<sub>2</sub> surface using a conventional low-pressure chemical vapor deposition (LPCVD) process (furnace from | Double side polished (DSP), 150 mm (100) Si wafers were selected for device fabrication. They were RCA cleaned and later oxidized in a conventional quartz tube (furnace from Tempress) using a dry oxidation process based on O<sub>2</sub> at 1100 °C, resulting in a 200 nm SiO<sub>2</sub> layer on Si. Next, a 2 μm amorphous Si layer was deposited on the SiO<sub>2</sub> surface using a conventional low-pressure chemical vapor deposition (LPCVD) process (furnace from | ||
Tempress) based on SiH<sub>4</sub> at 560 °C. This procedure enables the preparation of home-made silicon-on-insulator (SOI) substrates. | Tempress) based on SiH<sub>4</sub> at 560 °C. This procedure enables the preparation of home-made silicon-on-insulator (SOI) substrates. | ||