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| =Recipes on PECVD2 for deposition of silicon oxides=
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| ===Recipes===
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| {| border="1" cellspacing="0" cellpadding="7"
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| |-
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| |Recipe name
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| |SiH4 flow [sccm]
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| |N<math>_2</math>O flow [sccm]
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| |N2 flow [sccm]
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| |Pressure [mTorr]
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| |Power [W]
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| |Description
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| |-
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| |1STOxide
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| |12
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| |1420 (setting in software is 710)
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| |392
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| |550
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| |100
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| |-
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| |}
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| LF=Low Frequency
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| ===Expected results===
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| {| border="1" cellspacing="0" cellpadding="5"
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| |-
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| |Recipe name
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| |Deposition rate [nm/min]
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| |RI
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| |Uniformity [%]
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| |-
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| |STOxide
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| |[[/deposition rate for STOxide|~100]]
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| |~1.47
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| |<1
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| |-
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| |}
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| =Recipes on PECVD3 for deposition of silicon oxides= | | =Recipes on PECVD3 for deposition of silicon oxides= |
