LabAdviser/Technology Research/Fabrication of Hyperbolic Metamaterials using Atomic Layer Deposition/EMT Procces flow: Difference between revisions
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|To ensure clean surface, the 100 mm Si wafer is treated by O<sub>2</sub>/N<sub>2</sub> plasma. | |To ensure clean surface, the 100 mm Si wafer is treated by O<sub>2</sub>/N<sub>2</sub> plasma. | ||
|[[Specific_Process_Knowledge/Lithography/Strip#Plasma_Asher_2| Plasma Asher 2]] | |[[Specific_Process_Knowledge/Lithography/Strip#Plasma_Asher_2| Plasma Asher 2]] | ||
| | |[[image:1_Si.JPG|250x350px|center|]] | ||
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|Deposition carries 7 times in order to get 1 µm thick film | |Deposition carries 7 times in order to get 1 µm thick film | ||
|[[Specific_Process_Knowledge/Thin_film_deposition/Furnace_LPCVD_Nitride/Deposition_of_stoichiometric_nitride_using_the_6"_LPCVD_nitride_furnace|6" LPCVD nitride furnace]]. | |[[Specific_Process_Knowledge/Thin_film_deposition/Furnace_LPCVD_Nitride/Deposition_of_stoichiometric_nitride_using_the_6"_LPCVD_nitride_furnace|6" LPCVD nitride furnace]]. | ||
|[[image: | |[[image:2_SiN_LPCVD.JPG|250x350px|center|]] | ||
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|The best quility wafer selects and cleaves in four pieces. | |The best quility wafer selects and cleaves in four pieces. | ||
| [[Specific_Process_Knowledge/Characterization/Optical_microscope|Optical Microscopy]]. | | [[Specific_Process_Knowledge/Characterization/Optical_microscope|Optical Microscopy]]. | ||
|[[image: | |[[image:3_ALD.JPG|250x350px|center|]] | ||
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