Jump to content

Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide/Deposition of Silicon Oxide using PECVD: Difference between revisions

Bghe (talk | contribs)
Bghe (talk | contribs)
Line 117: Line 117:
|
|
'''68-69 nm/min''' (2015-04-24 BGHE)<br>
'''68-69 nm/min''' (2015-04-24 BGHE)<br>
109 &plusmn; 2 nm/min [tested: 2014-03-18]
109 &plusmn; 2 nm/min [tested: 2014-03-18] ''Old shower head''
|-
|-
!index of refraction
!index of refraction
Line 123: Line 123:
|
|
'''1.463-1.464''' (2015-04-24 BGHE)<br>
'''1.463-1.464''' (2015-04-24 BGHE)<br>
1.465 [tested: 2014-03-18]
1.465 [tested: 2014-03-18] ''Old shower head''
|-
|-
!Uniformity
!Uniformity
Line 129: Line 129:
|
|
'''1%''' over the wafer (2015-04-24 BGHE)<br>
'''1%''' over the wafer (2015-04-24 BGHE)<br>
3.2% over the wafer [tested: 2014-03-18]
3.2% over the wafer [tested: 2014-03-18] ''Old shower head''
|}
|}