Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide/Deposition of Silicon Oxide using PECVD: Difference between revisions

@@ Line 104: / Line 104: @@
 =Recipes on PECVD3 for deposition of silicon oxides=
+{| border="1" cellspacing="2" cellpadding="2" colspan="3"
+|bgcolor="#98FB98" |'''Quality Controle (QC) for PECVD3 - oxide'''
+|-
+|
+*[http://labmanager.danchip.dtu.dk/d4Show.php?id=1389&mach=18 The QC procedure for RIE1 and RIE2]<br>
+*[http://www.labmanager.danchip.dtu.dk/view_binary.php?type=data&mach=18 The newest QC data for RIE1]<br>
+*[http://www.labmanager.danchip.dtu.dk/view_binary.php?type=data&mach=19 The newest QC data for RIE2]
+{| {{table}}
+| align="center" |
+{| border="1" cellspacing="1" cellpadding="2"  align="center" style="width:200px"
+! QC Recipe:
+! QCOXIDE
+|-
+| SF<sub>6</sub> flow
+|32 sccm
+|-
+|O<sub>2</sub> flow
+|8 sccm
+|-
+|Pressure
+|80 mTorr
+|-
+|RF-power
+|30 W
+|-
+|Etch Load
+|50%
+|-
+|}
+| align="center" valign="top"|
+{| border="2" cellspacing="1" cellpadding="2" align="center" style="width:500px"
+!QC limits
+!RIE1
+!RIE2
+|-
+|Etch rate in Si
+|0.2 - 0.6 µm/min
+|0.2 - 0.6 µm/min
+|-
+|Non-uniformity
+|2 - 5 %
+|2 - 5 %
+|-
+|}
+|-
+|}
+|}
 ===Recipes===
 {| border="1" cellspacing="0" cellpadding="7"