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Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide/Deposition of Silicon Oxide using PECVD: Difference between revisions

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Bghe (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, Bureaucrats, Administrators
7,317 edits
Line 17: Line 17:
|B2H6 flow [sccm]
|B2H6 flow [sccm]
|PH3 flow [sccm]
|PH3 flow [sccm]
|GeH4*100 flow [sccm]
|Pressure [mTorr]
|Pressure [mTorr]
|Power [W]
|Power [W]
Line 24: Line 25:
|17
|17
|1600
|1600
|0
|0
|0
|0
|0
Line 37: Line 39:
|135
|135
|40
|40
|0
|500
|500
|800LF
|800LF
Line 47: Line 50:
|240
|240
|60
|60
|0
|500
|500
|800LF
|800LF
|Low stress PBSG
|Low stress PBSG
|-
|-
|HO_core
|17
|1600
|300
|0
|0
|400
|400
|600LF
|Developed by Haiyan Ou @fotonik@dtu
|-
|HO_top
|17
|1600
|0
|107
|40
|0
|500
|800LF
|Developed by Haiyan Ou @fotonik@dtu
|-
|}
|}


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