Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide/Deposition of Silicon Oxide using LPCVD TEOS: Difference between revisions
New page: TEOS oxide, has a dielectric constant of 3.56 (For thermal oxide it is 3.46). Furthermore TEOS has a breakdown voltage in the order of 10^6 |
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TEOS oxide, has a dielectric | TEOS oxide, has a dielectric | ||
constant of 3.56 (For thermal oxide it is 3.46). Furthermore TEOS has a breakdown | constant of 3.56 (For thermal oxide it is 3.46). Furthermore TEOS has a breakdown | ||
voltage in the order of 10^6 | voltage in the order of <math> 10^6 </math> | ||
for sjov | |||
<math> | |||
\mathcal{V}^\prime=-\sqrt{rcs}A\cosh(\sqrt{rcs}(L-x))-\sqrt{rcs}B\sinh(\sqrt{rcs}(L-x)) | |||
</math> | |||
<math> Z=\frac{\mathcal{V}(0)}{\mathcal{I}(0)}=rL\frac{B\cosh(\sqrt{rcs}L)}{\sqrt{rcs}LB\sinh(\sqrt{rcs}L)} </math> | |||
[[image:RIE1_Si_Angle_O2_CHF3.jpg|300x300px|thumb|right|Angle of sidewall on 1.5 µm trenches - independent on pressure within the given pressure range]] | |||
<math> | |||
\includegraphics[width=0.5\textwidth]{RIE1_Si_Angle_O2_CHF3.jpg} | |||
\caption{The simplified model, which can be used in stead of the | |||
one in figure. In this representation is | |||
the total resistance in the entire transmission lines, not just | |||
between the capacitors.} | |||
</math> | |||
Revision as of 14:14, 23 November 2007
TEOS oxide, has a dielectric constant of 3.56 (For thermal oxide it is 3.46). Furthermore TEOS has a breakdown voltage in the order of
for sjov
Failed to parse (unknown function "\includegraphics"): {\displaystyle \includegraphics[width=0.5\textwidth]{RIE1_Si_Angle_O2_CHF3.jpg} \caption{The simplified model, which can be used in stead of the one in figure. In this representation is the total resistance in the entire transmission lines, not just between the capacitors.} }