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Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide/Deposition of Silicon Oxide using PECVD: Difference between revisions

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=Recipes on PECVD3 for deposition of doped oxide=
===Recipes===
{| border="1" cellspacing="0" cellpadding="7"
|-
|Recipe name
|SiH<math>_4</math> flow [sccm]
|N<math>_2</math> flow [sccm]
|GeH<math>_4</math> flow [sccm] (scaled by 100)
|B<math>_2</math>H<math>_6</math> flow [sccm]
|PH<math>_3</math> flow [sccm]
|Pressure [mTorr]
|Power [W]
|Description
|-
|Core-Ge
|17
|300
|300
|0
|0
|400
|300 LF
|Process for germanium doped core layer developed by Haiyan Ou from DTU Photonics
|-
|Top-BPSG
|17
|0
|0
|40
|100
|500
|800 LF
|Process for PBSG top clading layer developed by Haiyan Ou from DTU Photonics
|}
===Expected results===
{| border="1" cellspacing="0" cellpadding="5"
|-
|Recipe name
|Deposition rate [nm/min]
|Refractive index
|-
|Core-Ge
|
|
|-
|Top-BPSG
|~248 nm/min
|~1.458
|}
|}

Revision as of 10:13, 18 June 2012

At the moment DANCHIP has 3 PECVDs that can deposite silicon oxide with or without dopants of Boron, Phosphorous or Germanium. PECVD1 and PECVD3 are for silicon based processing. PECVD2 is for III-V processing and is described under III-V processing. Look at the PECVD page to learn more about the PECVDs at DANCHIP. Allthough PECVD1 and PECVD3 are very much alike you cannot count on the a recipe on one system will give exactly the same results on the other system.


Recipes on PECVD1 for deposition of silicon oxides

Recipes

Recipe name SiH4 flow [sccm] N2O flow [sccm] N2 flow [sccm] B2H6 flow [sccm] PH3 flow [sccm] Pressure [mTorr] Power [W] Description
1oxide/1ox_std/standard 17 1600 0 0 0 400 380LF Process control recipe. Developed for waveguides
1PBSG 17 1600 0 135 40 500 800LF Developed for waveguide top cladding by Haiyan Ou @DTU Photonics
BGE_PBSG 17 1600 0 240 60 500 800LF Low stress PBSG

Expected results

Recipe name Deposition rate [µm/min] RI Uniformity [%] Comments
1oxide/1ox_std/standard ~0.193 1.46 2 The latest measured values can be seen in the process control sheet in LabManager
1PBSG ~0.3 1.458@633nm

Recipes on PECVD3 for deposition of silicon oxides

Recipes

Recipe name SiH4 flow [sccm] N2O flow [sccm] N2 flow [sccm] B2H6 flow [sccm] PH3 flow [sccm] Pressure [mTorr] Power [W] Description
LFSiO 12 1420 392 0 0 550 60 Uniform silicon oxide
1PBSG 17 1600 0 135 40 500 800LF BPSG glass for waveguide cladding layer

LF=Low Frequency

Expected results

Recipe name Deposition rate [nm/min] RI Uniformity [%]
LFSiO ~81 ~1.48 <1
1PBSG ~228 nm/min . ~17%

Recipes on PECVD3 for deposition of doped oxide

Recipes

Recipe name SiH4 flow [sccm] N2 flow [sccm] GeH4 flow [sccm] (scaled by 100) B2H6 flow [sccm] PH3 flow [sccm] Pressure [mTorr] Power [W] Description
Core-Ge 17 300 300 0 0 400 300 LF Process for germanium doped core layer developed by Haiyan Ou from DTU Photonics
Top-BPSG 17 0 0 40 100 500 800 LF Process for PBSG top clading layer developed by Haiyan Ou from DTU Photonics

Expected results

Recipe name Deposition rate [nm/min] Refractive index
Core-Ge
Top-BPSG ~248 nm/min ~1.458
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