Revision as of 09:41, 30 September 2010

At the moment DANCHIP has 3 PECVDs that can deposite silicon oxide with or without dopants of Boron, Phosphorous or Germanium. PECVD1 and PECVD3 are for silicon based processing. PECVD2 is for III-V processing and will be describes under III-V processing. Look at the PECVD page to learn more about the PECVDs at DANCHIP. All though PECVD1 and PECVD3 are very much alike you cannot count on the a recipe on one system will give exactly the same results on the other system.

Recipes on PECVD1 for deposition of silicon oxides

Recipes

Recipe name	SiH4 flow [sccm]	N $_{2}$ O flow [sccm]	N2 flow [sccm]	B2H6 flow [sccm]	PH3 flow [sccm]	Pressure [mTorr]	Power [W]	Description
1oxide/standard	17	1600	0	0	0	400	380LF	Developed for waveguides
1PBSG								Developed for waveguide top cladding by Haiyan Ou @DTU Photonics

Expected results

Recipe name	Deposition rate [µm/min]	RI	Uniformity [%]
1oxide/standard	~0.193	1.46	2
1PBSG	~0.3

Recipes on PECVD2 for deposition of silicon oxides

Recipes

Recipe name	SiH4 flow [sccm]	N $_{2}$ O flow [sccm]	N2 flow [sccm]	Pressure [mTorr]	Power [W]	Description
LFSiO	12	1420 (setting in software is 710)	392	550	100

LF=Low Frequency

Expected results

Recipe name	Deposition rate [nm/min]	RI	Uniformity [%]
LFSiO	~100	~1.48	<1

Recipes on PECVD3 for deposition of silicon oxides

Recipes

Recipe name	SiH4 flow [sccm]	N $_{2}$ O flow [sccm]	N2 flow [sccm]	Pressure [mTorr]	Power [W]	Description
LFSiO	12	1420	392	550	60

LF=Low Frequency

Expected results

Recipe name	Deposition rate [nm/min]	RI	Uniformity [%]
LFSiO	~81	~1.48	<1

@@ Line 73: / Line 73: @@
 |LFSiO
 |12
-|1420 (setting i software is 710)
+|1420 (setting in software is 710)
 |392
 |550
@@ Line 80: / Line 80: @@
 |-
 |}
 LF=Low Frequency
 ===Expected results===