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Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide/Deposition of Silicon Oxide using PECVD: Difference between revisions

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At the moment DANCHIP has 3 PECVDs that can deposite silicon oxide with or without dopants of Boron, Phosphorous or Germanium. PECVD1 and PECVD3 are for silicon based processing. PECVD2 is for III-V processing and will be describes under III-V processing. Look at the [[Specific Process Knowledge/Thin film deposition/PECVD|PECVD]] page to learn more about the PECVDs at DANCHIP. All though PECVD1 and PECVD3 are very much alike you cannot count on the a recipe on one system will give exactly the same results on the other system.
At the moment DANCHIP has 3 PECVDs that can deposite silicon oxide with or without dopants of Boron, Phosphorous or Germanium. PECVD1 and PECVD3 are for silicon based processing. PECVD2 is for III-V processing and is described under III-V processing. Look at the [[Specific Process Knowledge/Thin film deposition/PECVD|PECVD]] page to learn more about the PECVDs at DANCHIP. All though PECVD1 and PECVD3 are very much alike you cannot count on the a recipe on one system will give exactly the same results on the other system.





Revision as of 16:44, 8 November 2010

At the moment DANCHIP has 3 PECVDs that can deposite silicon oxide with or without dopants of Boron, Phosphorous or Germanium. PECVD1 and PECVD3 are for silicon based processing. PECVD2 is for III-V processing and is described under III-V processing. Look at the PECVD page to learn more about the PECVDs at DANCHIP. All though PECVD1 and PECVD3 are very much alike you cannot count on the a recipe on one system will give exactly the same results on the other system.


Recipes on PECVD1 for deposition of silicon oxides

Recipes

Recipe name SiH4 flow [sccm] N2O flow [sccm] N2 flow [sccm] B2H6 flow [sccm] PH3 flow [sccm] Pressure [mTorr] Power [W] Description
1oxide/standard 17 1600 0 0 0 400 380LF Developed for waveguides
1PBSG Developed for waveguide top cladding by Haiyan Ou @DTU Photonics

Expected results

Recipe name Deposition rate [µm/min] RI Uniformity [%]
1oxide/standard ~0.193 1.46 2
1PBSG ~0.3


Recipes on PECVD3 for deposition of silicon oxides

Recipes

Recipe name SiH4 flow [sccm] N2O flow [sccm] N2 flow [sccm] Pressure [mTorr] Power [W] Description
LFSiO 12 1420 392 550 60

LF=Low Frequency

Expected results

Recipe name Deposition rate [nm/min] RI Uniformity [%]
LFSiO ~81 ~1.48 <1