Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide/Deposition of SiO2 in E-Beam Evaporator Temescal-2: Difference between revisions

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+'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Silicon_Oxide/Deposition_of_SiO2_in_E-Beam_Evaporator_Temescal-2 click here]'''
 <i>This page is written by <b>Evgeniy Shkondin @DTU Nanolab</b> if nothing else is stated. <br>
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 ==Uniformity across 150 mm wafer==
-Results have been obtained for <100> 150 mm Si wafers with native oxide, based on ellipsometry study.
+Results have been obtained for <100> 150 mm Si wafers with native oxide, based on [[Specific_Process_Knowledge/Characterization/Optical_characterization#Ellipsometer|ellipsometry study]].
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 =Optical functions=
-Results have been obtained for <100> 150 mm Si wafers with native oxide, based on ellipsometry study. Sellmeier model has been implemented for refractive index fitting.
+Results have been obtained for <100> 150 mm Si wafers with native oxide, based on [[Specific_Process_Knowledge/Characterization/Optical_characterization#Ellipsometer|ellipsometry study]]. Sellmeier model has been implemented for refractive index fitting.
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