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Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide/Deposition of Silicon Oxide using PECVD: Difference between revisions

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|Uniformity [%]
|Uniformity [%]
|Stress
|Stress
|Comment
|-
|-
|LFSiO2
|LFSiO2
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|~1.5%
|~1.5%
|'''400-402 MPa''' compressive stress '' by Anders Simonsen @nbi.ku.dk April 2016''
|'''400-402 MPa''' compressive stress '' by Anders Simonsen @nbi.ku.dk April 2016''
|We have seen that this recipe does not deposit the first minute
|-  
|-  
|LFSiO
|LFSiO
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|<1
|<1
|not measured
|not measured
|.
|-
|-
|1PBSG
|1PBSG
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|~17%
|~17%
|not measured
|not measured
|.
|}
|}
<br clear="all" />
<br clear="all" />
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|Description
|Description
|-  
|-  
|Core-Ge
|Core-Ge (not possible anymore as we have no Germanium)
|17
|17
|1600
|1600
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|~1.458  
|~1.458  
|}
|}


=Recipes on PECVD2 for deposition of silicon oxides <span style="color:Red">EXPIRED!!!</span>=
=Recipes on PECVD2 for deposition of silicon oxides <span style="color:Red">EXPIRED!!!</span>=