Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide/Deposition of Silicon Oxide using PECVD: Difference between revisions
| (3 intermediate revisions by the same user not shown) | |||
| Line 1: | Line 1: | ||
'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Silicon_Oxide/Deposition_of_Silicon_Oxide_using_PECVD click here]''' | '''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Silicon_Oxide/Deposition_of_Silicon_Oxide_using_PECVD click here]'''<br> | ||
{{CC-bghe1}} | |||
At the moment DTU Nanolab has 2 PECVDs that can deposit silicon oxide with or without dopants of boron, phosphorus. PECVD1 and PECVD2 has been decommissioned and now we have PECVD3 and PECVD4. PECVD3 are for silicon based processing allowing wafers with small amount of metal (<5% wafer coverage). PECVD4 is for clean wafers both for silicon based materials and for III-V materials. Look at the [[Specific Process Knowledge/Thin film deposition/PECVD|PECVD]] page to learn more about the PECVDs at Nanolab. All though PECVD4 and PECVD3 are very much alike you cannot count on that a recipe on one system will give exactly the same results on the other system. | At the moment DTU Nanolab has 2 PECVDs that can deposit silicon oxide with or without dopants of boron, phosphorus. PECVD1 and PECVD2 has been decommissioned and now we have PECVD3 and PECVD4. PECVD3 are for silicon based processing allowing wafers with small amount of metal (<5% wafer coverage). PECVD4 is for clean wafers both for silicon based materials and for III-V materials. Look at the [[Specific Process Knowledge/Thin film deposition/PECVD|PECVD]] page to learn more about the PECVDs at Nanolab. All though PECVD4 and PECVD3 are very much alike you cannot count on that a recipe on one system will give exactly the same results on the other system. | ||
| Line 278: | Line 278: | ||
|Uniformity [%] | |Uniformity [%] | ||
|Stress | |Stress | ||
|Comment | |||
|- | |- | ||
|LFSiO2 | |LFSiO2 | ||
| Line 284: | Line 285: | ||
|~1.5% | |~1.5% | ||
|'''400-402 MPa''' compressive stress '' by Anders Simonsen @nbi.ku.dk April 2016'' | |'''400-402 MPa''' compressive stress '' by Anders Simonsen @nbi.ku.dk April 2016'' | ||
|We have seen that this recipe does not deposit the first minute | |||
|- | |- | ||
|LFSiO | |LFSiO | ||
| Line 290: | Line 292: | ||
|<1 | |<1 | ||
|not measured | |not measured | ||
|. | |||
|- | |- | ||
|1PBSG | |1PBSG | ||
| Line 296: | Line 299: | ||
|~17% | |~17% | ||
|not measured | |not measured | ||
|. | |||
|} | |} | ||
<br clear="all" /> | <br clear="all" /> | ||
| Line 314: | Line 318: | ||
|Description | |Description | ||
|- | |- | ||
|Core-Ge | |Core-Ge (not possible anymore as we have no Germanium) | ||
|17 | |17 | ||
|1600 | |1600 | ||
| Line 354: | Line 358: | ||
|~1.458 | |~1.458 | ||
|} | |} | ||
=Recipes on PECVD2 for deposition of silicon oxides <span style="color:Red">EXPIRED!!!</span>= | =Recipes on PECVD2 for deposition of silicon oxides <span style="color:Red">EXPIRED!!!</span>= | ||