LabAdviser/Technology Research/Fabrication of Hyperbolic Metamaterials using Atomic Layer Deposition/AZO pillars: Difference between revisions
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'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Technology_Research/Fabrication_of_Hyperbolic_Metamaterials_using_Atomic_Layer_Deposition/AZO_pillars click here]''' | '''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/LabAdviser/Technology_Research/Fabrication_of_Hyperbolic_Metamaterials_using_Atomic_Layer_Deposition/AZO_pillars click here]''' | ||
<i>This page is written by <b>Evgeniy Shkondin @DTU Nanolab</b> if nothing else is stated. <br> | <i>This page is written by <b>Evgeniy Shkondin @DTU Nanolab</b> if nothing else is stated. <br> | ||
All images and photos on this page | All images and photos on this page belongs to <b>DTU Nanolab</b> and <b>DTU Electro</b> (previous DTU Fotonik).<br></i> | ||
= | =Fabrication of Hyperbolic Metamaterials by ALD: AZO Pillars= | ||
The fabrication and characterization described below were conducted in <b>2013-2016 by Evgeniy Shkondin, DTU Nanolab</b>.<br> | |||
== Procces flow description == | |||
Double side polished (DSP), 150 mm (100) Si wafers were selected for device fabrication. They were RCA cleaned and later oxidized in a conventional quartz tube (furnace from Tempress) using a dry oxidation process based on O<sub>2</sub> at 1100 °C, resulting in a 200 nm SiO<sub>2</sub> layer on Si. Next, a 2 μm amorphous Si layer was deposited on the SiO<sub>2</sub> surface using a conventional low-pressure chemical vapor deposition (LPCVD) process (furnace from | Double side polished (DSP), 150 mm (100) Si wafers were selected for device fabrication. They were RCA cleaned and later oxidized in a conventional quartz tube (furnace from Tempress) using a dry oxidation process based on O<sub>2</sub> at 1100 °C, resulting in a 200 nm SiO<sub>2</sub> layer on Si. Next, a 2 μm amorphous Si layer was deposited on the SiO<sub>2</sub> surface using a conventional low-pressure chemical vapor deposition (LPCVD) process (furnace from | ||
Tempress) based on SiH<sub>4</sub> at 560 °C. This procedure enables the preparation of home-made silicon-on-insulator (SOI) substrates. | Tempress) based on SiH<sub>4</sub> at 560 °C. This procedure enables the preparation of home-made silicon-on-insulator (SOI) substrates. | ||
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!1.3 | !1.3 | ||
|LPCVD deposition of Si. (Optional step. Needs only if SOI substrates requires) | |LPCVD deposition of Si. (Optional step. Needs only if SOI substrates requires) | ||
|LPCVD of amorphous silicon using [[ | |LPCVD of amorphous silicon using [[Specific Process Knowledge/Thin film deposition/Furnace LPCVD PolySilicon/Standard recipes, QC limits and results for the 6" polysilicon furnace|AMORPOLY]] recipe in 6" Furnace LPCVD PolySilicon. | ||
|[[ | |[[Specific Process Knowledge/Thin film deposition/Furnace LPCVD PolySilicon| 6" Furnace LPCVD PolySilicon]]. | ||
|[[image:3_1_SOI.jpg|250x350px|center|]] | |[[image:3_1_SOI.jpg|250x350px|center|]] | ||
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