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Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide/Deposition of Silicon Oxide using PECVD: Difference between revisions

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'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Silicon_Oxide/Deposition_of_Silicon_Oxide_using_PECVD  click here]'''  
'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Silicon_Oxide/Deposition_of_Silicon_Oxide_using_PECVD  click here]'''<br>
{{CC-bghe1}}




At the moment DANCHIP has 2 PECVDs that can deposite silicon oxide with or without dopants of Boron, Phosphorous. PECVD1 and PECVD2 has been decommissioned and now we have PECVD3 and PECVD4. PECVD3 are for silicon based processing allowing wafers with small abount of metal (<5% wafer coverage). PECVD4 is for clean wafers both for silicon based materials and for III-V materials. Look at the [[Specific Process Knowledge/Thin film deposition/PECVD|PECVD]] page to learn more about the PECVDs at DANCHIP. All though PECVD4 and PECVD3 are very much alike you cannot count on that a recipe on one system will give exactly the same results on the other system.
At the moment DTU Nanolab has 2 PECVDs that can deposit silicon oxide with or without dopants of boron, phosphorus. PECVD1 and PECVD2 has been decommissioned and now we have PECVD3 and PECVD4. PECVD3 are for silicon based processing allowing wafers with small amount of metal (<5% wafer coverage). PECVD4 is for clean wafers both for silicon based materials and for III-V materials. Look at the [[Specific Process Knowledge/Thin film deposition/PECVD|PECVD]] page to learn more about the PECVDs at Nanolab. All though PECVD4 and PECVD3 are very much alike you cannot count on that a recipe on one system will give exactly the same results on the other system.


== Deposition of SiO2 with PECVD4 ==
== Deposition of SiO2 with PECVD4 ==
{| border="1" cellspacing="2" cellpadding="2" colspan="3"
{| border="1" cellspacing="2" cellpadding="2" colspan="3"
|bgcolor="#98FB98" |'''Quality Controle (QC) for PECVD4 - oxide [[Image:section under construction.jpg|70px]] '''
|bgcolor="#98FB98" |'''Quality Control (QC) for PECVD4 - oxide '''
|-
|-
|
|
*[http://labmanager.danchip.dtu.dk/d4Show.php?id=1402&mach=395 The QC procedure for PECVD4]<br>
*[http://labmanager.dtu.dk/d4Show.php?id=5093&mach=395 The QC procedure for PECVD4 - requires login]<br>
*[http://www.labmanager.danchip.dtu.dk/view_binary.php?type=data&mach=106 The newest QC data for PECVD3]
*[https://labmanager.dtu.dk/view_binary.php?type=data&mach=395 The newest QC data for PECVD4 - requires login]
{| {{table}}
{| {{table}}
| align="center" |  
| align="center" |  
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{| border="2" cellspacing="1" cellpadding="2" align="center" style="width:500px"
{| border="2" cellspacing="1" cellpadding="2" align="center" style="width:500px"
!QC limits
!QC limits
!PECVD3 - OXIDE
!PECVD4 - OXIDE
|-
|-
|Deposition rate
|Deposition rate
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|&plusmn; 2.1-2.7%<!-- Unif. [%] -->
|&plusmn; 2.1-2.7%<!-- Unif. [%] -->
|compressive 309 MPa <!-- Stress [MPa] -->
|compressive 309 MPa <!-- Stress [MPa] -->
|[[/LF_SiO2 results|more results]]<!-- Comments -->
|[[/LF_SiO2 results|Click for more results]]<!-- Comments -->
|12<!-- SiH4 [sccm] -->
|12<!-- SiH4 [sccm] -->
|1420<!-- N2O [sccm] -->
|1420<!-- N2O [sccm] -->
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|&plusmn; 0.3-0.5%<!-- Unif. [%] -->
|&plusmn; 0.3-0.5%<!-- Unif. [%] -->
|Compressive: 250.5 MPa<!-- Stress [MPa] -->
|Compressive: 250.5 MPa<!-- Stress [MPa] -->
|<!-- Comments -->
|[[/HF_SiO2 results|Click for more results]]<!-- Comments -->
|10<!-- SiH4 [sccm] -->
|10<!-- SiH4 [sccm] -->
|1420<!-- N2O [sccm] -->
|1420<!-- N2O [sccm] -->
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|<!-- PH3 -->
|<!-- PH3 -->
|300 mTorr<!-- Pressure [mTorr] -->
|300 mTorr<!-- Pressure [mTorr] -->
|700LF<!-- Power [W] -->
|700 LF<!-- Power [W] -->
|<!-- Load -->
|<!-- Load -->
|<!-- Tune -->
|<!-- Tune -->
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|40<!-- PH3 -->
|40<!-- PH3 -->
|900 mTorr<!-- Pressure [mTorr] -->
|900 mTorr<!-- Pressure [mTorr] -->
|800LF <!-- Power [W] -->
|800 LF <!-- Power [W] -->
|<!-- Load -->
|<!-- Load -->
|<!-- Tune -->
|<!-- Tune -->
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=Recipes on PECVD3 for deposition of silicon oxides=
=Recipes on PECVD3 for deposition of silicon oxides=
{| border="1" cellspacing="2" cellpadding="2" colspan="3"
{| border="1" cellspacing="2" cellpadding="2" colspan="3"
|bgcolor="#98FB98" |'''Quality Controle (QC) for PECVD3 - oxide'''
|bgcolor="#98FB98" |'''Quality Control (QC) for PECVD3 - oxide'''
|-
|-
|
|
*[http://labmanager.danchip.dtu.dk/d4Show.php?id=1402&mach=106 The QC procedure for PECVD3]<br>
*[http://labmanager.dtu.dk/d4Show.php?id=1402&mach=106 The QC procedure for PECVD3 - requires login]<br>
*[http://www.labmanager.danchip.dtu.dk/view_binary.php?type=data&mach=106 The newest QC data for PECVD3]
*[https://labmanager.dtu.dk/view_binary.php?type=data&mach=106 The newest QC data for PECVD3 - requires login]
{| {{table}}
{| {{table}}
| align="center" |  
| align="center" |  
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|40
|40
|500
|500
|800LF
|800 LF
|BPSG glass for waveguide cladding layer  
|BPSG glass for waveguide cladding layer  
|}
|}
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|Uniformity [%]
|Uniformity [%]
|Stress
|Stress
|Comment
|-
|-
|LFSiO2
|LFSiO2
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|~1.5%
|~1.5%
|'''400-402 MPa''' compressive stress '' by Anders Simonsen @nbi.ku.dk April 2016''
|'''400-402 MPa''' compressive stress '' by Anders Simonsen @nbi.ku.dk April 2016''
|We have seen that this recipe does not deposit the first minute
|-  
|-  
|LFSiO
|LFSiO
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|<1
|<1
|not measured
|not measured
|.
|-
|-
|1PBSG
|1PBSG
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|~17%
|~17%
|not measured
|not measured
|.
|}
|}
<br clear="all" />
<br clear="all" />
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|Description
|Description
|-  
|-  
|Core-Ge
|Core-Ge (not possible anymore as we have no Germanium)
|17
|17
|1600
|1600
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|~1.458  
|~1.458  
|}
|}


=Recipes on PECVD2 for deposition of silicon oxides <span style="color:Red">EXPIRED!!!</span>=
=Recipes on PECVD2 for deposition of silicon oxides <span style="color:Red">EXPIRED!!!</span>=
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|-
|-
|
|
*[http://labmanager.danchip.dtu.dk/d4Show.php?id=1988&mach=17 The QC procedure for PECVD2]<br>
 
*[http://labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=17 The newest QC data for PECVD2]
{| {{table}}
{| {{table}}
| align="center" |  
| align="center" |  
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!PECVD2
!PECVD2
|-
|-
|Depostion rate of Silicon Oxide
|Deposition rate of Silicon Oxide
|58nm/min - 78nm/min
|58 nm/min - 78nm/min
|-
|-
|Non-uniformity of the deposition rate: ''(max-min)/2*AVG''
|Non-uniformity of the deposition rate: ''(max-min)/2*AVG''
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|1.45 - 1.48
|1.45 - 1.48
|-
|-
|Non-uniformity of the refrative index: ''(max-min)/2*AVG''
|Non-uniformity of the refractive index: ''(max-min)/2*AVG''
|<0.2%
|<0.2%
|-
|-
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==BPSG: RI vs. B/P <span style="color:Red">EXPIRED!!!</span> ==
==BPSG: RI vs. B/P <span style="color:Red">EXPIRED!!!</span> ==
B2H6 flow and PH3 flow was varied to map the RI of different B2H6/PH3 ratios. <br>
B2H6 flow and PH3 flow was varied to map the RI of different B2H6/PH3 ratios. <br>
''Work done by BGHE@danchip in fall 2013'' <br>
''Work done by BGHE@dtu in fall 2013'' <br>
{| border="1" cellspacing="0" cellpadding="7"
{| border="1" cellspacing="0" cellpadding="7"
|-
|-
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