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'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Silicon_Oxide/Deposition_of_Silicon_Oxide_using_PECVD  click here]'''  
'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Silicon_Oxide/Deposition_of_Silicon_Oxide_using_PECVD  click here]'''<br>
{{CC-bghe1}}




At the moment DANCHIP has 2 PECVDs that can deposite silicon oxide with or without dopants of Boron, Phosphorous. PECVD1 and PECVD2 has been decommissioned and now we have PECVD3 and PECVD4. PECVD3 are for silicon based processing allowing wafers with small abount of metal (<5% wafer coverage). PECVD4 is for clean wafers both for silicon based materials and for III-V materials. Look at the [[Specific Process Knowledge/Thin film deposition/PECVD|PECVD]] page to learn more about the PECVDs at DANCHIP. All though PECVD4 and PECVD3 are very much alike you cannot count on that a recipe on one system will give exactly the same results on the other system.
At the moment DTU Nanolab has 2 PECVDs that can deposit silicon oxide with or without dopants of boron, phosphorus. PECVD1 and PECVD2 has been decommissioned and now we have PECVD3 and PECVD4. PECVD3 are for silicon based processing allowing wafers with small amount of metal (<5% wafer coverage). PECVD4 is for clean wafers both for silicon based materials and for III-V materials. Look at the [[Specific Process Knowledge/Thin film deposition/PECVD|PECVD]] page to learn more about the PECVDs at Nanolab. All though PECVD4 and PECVD3 are very much alike you cannot count on that a recipe on one system will give exactly the same results on the other system.


== Deposition of SiO2 with PECVD4 ==
== Deposition of SiO2 with PECVD4 ==
{| border="1" cellspacing="2" cellpadding="2" colspan="3"
|bgcolor="#98FB98" |'''Quality Control (QC) for PECVD4 - oxide '''
|-
|
*[http://labmanager.dtu.dk/d4Show.php?id=5093&mach=395 The QC procedure for PECVD4 - requires login]<br>
*[https://labmanager.dtu.dk/view_binary.php?type=data&mach=395 The newest QC data for PECVD4 - requires login]
{| {{table}}
| align="center" |
{| border="1" cellspacing="1" cellpadding="2"  align="center" style="width:200px"
! QC Recipe:
! QCOXYD2
|-
| SiH<sub>4</sub> flow
|12 sccm
|-
|N<sub>2</sub>O flow
|1420 sccm
|-
|N<sub>2</sub> flow
|392 sccm
|-
|Pressure
|550 mTorr
|-
|RF-power
|60 W
|-
|}
| align="center" valign="top"|
{| border="2" cellspacing="1" cellpadding="2" align="center" style="width:500px"
!QC limits
!PECVD4 - OXIDE
|-
|Deposition rate
|70 - 85 nm/min
|-
|Non-uniformity
|<3.0
|-
|Refractive index
|1.474 - 1.486
|-
|}
|-
|}
|}


{| border="1" cellspacing="2" cellpadding="2"  
{| border="1" cellspacing="2" cellpadding="2"  
Line 33: Line 82:
|&plusmn; 2.1-2.7%<!-- Unif. [%] -->
|&plusmn; 2.1-2.7%<!-- Unif. [%] -->
|compressive 309 MPa <!-- Stress [MPa] -->
|compressive 309 MPa <!-- Stress [MPa] -->
|<!-- Comments -->
|[[/LF_SiO2 results|Click for more results]]<!-- Comments -->
|12<!-- SiH4 [sccm] -->
|12<!-- SiH4 [sccm] -->
|1420<!-- N2O [sccm] -->
|1420<!-- N2O [sccm] -->
Line 51: Line 100:
|&plusmn; 0.3-0.5%<!-- Unif. [%] -->
|&plusmn; 0.3-0.5%<!-- Unif. [%] -->
|Compressive: 250.5 MPa<!-- Stress [MPa] -->
|Compressive: 250.5 MPa<!-- Stress [MPa] -->
|<!-- Comments -->
|[[/HF_SiO2 results|Click for more results]]<!-- Comments -->
|10<!-- SiH4 [sccm] -->
|10<!-- SiH4 [sccm] -->
|1420<!-- N2O [sccm] -->
|1420<!-- N2O [sccm] -->
|<!-- N2 [sccm] -->
|392<!-- N2 [sccm] -->
|<!-- B2H6 -->
|<!-- B2H6 -->
|<!-- PH3 -->
|<!-- PH3 -->
Line 72: Line 121:
|17<!-- SiH4 [sccm] -->
|17<!-- SiH4 [sccm] -->
|2000<!-- N2O [sccm] -->
|2000<!-- N2O [sccm] -->
|1960<!-- N2 [sccm] -->
|<!-- N2 [sccm] -->
|<!-- B2H6 -->
|<!-- B2H6 -->
|<!-- PH3 -->
|<!-- PH3 -->
|300 mTorr<!-- Pressure [mTorr] -->
|300 mTorr<!-- Pressure [mTorr] -->
|700LF<!-- Power [W] -->
|700 LF<!-- Power [W] -->
|<!-- Load -->
|<!-- Load -->
|<!-- Tune -->
|<!-- Tune -->
Line 94: Line 143:
|40<!-- PH3 -->
|40<!-- PH3 -->
|900 mTorr<!-- Pressure [mTorr] -->
|900 mTorr<!-- Pressure [mTorr] -->
|800LF <!-- Power [W] -->
|800 LF <!-- Power [W] -->
|<!-- Load -->
|<!-- Load -->
|<!-- Tune -->
|<!-- Tune -->
Line 122: Line 171:
|}
|}


*[[/conformity|SEM images of the conformity of the layer on a structured surface]]


<br clear="all" />
<br clear="all" />


=Recipes on PECVD2 for deposition of silicon oxides=
=Recipes on PECVD3 for deposition of silicon oxides=
{| border="1" cellspacing="2" cellpadding="2" colspan="3"
|bgcolor="#98FB98" |'''Quality Control (QC) for PECVD3 - oxide'''
|-
|
*[http://labmanager.dtu.dk/d4Show.php?id=1402&mach=106 The QC procedure for PECVD3 - requires login]<br>
*[https://labmanager.dtu.dk/view_binary.php?type=data&mach=106 The newest QC data for PECVD3 - requires login]
{| {{table}}
| align="center" |
{| border="1" cellspacing="1" cellpadding="2"  align="center" style="width:200px"
 
! QC Recipe:
! QCOXYD2
|-
| SiH<sub>4</sub> flow
|12 sccm
|-
|N<sub>2</sub>O flow
|1420 sccm
|-
|N<sub>2</sub> flow
|392 sccm
 
|-
|Pressure
|700 mTorr
|-
|RF-power
|150 W
|-
|}
| align="center" valign="top"|
{| border="2" cellspacing="1" cellpadding="2" align="center" style="width:500px"
!QC limits
!PECVD3 - OXIDE
|-
|Deposition rate
|97 - 112 nm/min
|-
|Non-uniformity
|<2.0
|-
|Refractive index
|1.467 - 1.474
|-
|}
|-
|}
|}
 
===Recipes===
{| border="1" cellspacing="0" cellpadding="7"
|-
|Recipe name
|SiH4 flow [sccm]
|N<sub>2</sub>O flow [sccm]
|N2 flow [sccm]
|B2H6 flow [sccm]
|PH3 flow [sccm]
|Pressure [mTorr]
|Power [W]
|Description
|-
|LFSiO2
|12
|1420
|392
|0
|0
|700
|150
|New QC implemented in April 2016
|-
|LFSiO
|12
|1420
|392
|0
|0
|550
|60
|Uniform silicon oxide
|-
|1PBSG
|17
|1600
|0
|135
|40
|500
|800 LF
|BPSG glass for waveguide cladding layer
|}
LF=Low Frequency
 
===Expected results===
{| border="1" cellspacing="0" cellpadding="5"
|-
|Recipe name
|Deposition rate [nm/min]
|RI
|Uniformity [%]
|Stress
|Comment
|-
|LFSiO2
|105nm/min
|1.47
|~1.5%
|'''400-402 MPa''' compressive stress '' by Anders Simonsen @nbi.ku.dk April 2016''
|We have seen that this recipe does not deposit the first minute
|-
|LFSiO
|~75
|~1.48
|<1
|not measured
|.
|-
|1PBSG
|~228 nm/min
|.
|~17%
|not measured
|.
|}
<br clear="all" />
 
=Recipes on PECVD3 for deposition of doped oxide=
===Recipes===
{| border="1" cellspacing="0" cellpadding="7"
|-
|Recipe name
|SiH<sub>4</sub> flow [sccm]
|N<sub>2</sub>O flow [sccm]
|N<sub>2</sub> flow [sccm]
|GeH<sub>4</sub> flow [sccm] (scaled by 100)
|B<sub>2</sub>H<sub>6</sub> flow [sccm]
|PH<sub>3</sub> flow [sccm]
|Pressure [mTorr]
|Power [W]
|Description
|-
|Core-Ge (not possible anymore as we have no Germanium)
|17
|1600
|300
|300
|0
|0
|400
|600 LF
|Process for germanium doped core layer developed by Haiyan Ou from DTU Photonics
Annnealing: Anneal bond furnace, recipe "core1100"
|-
|Top-BPSG
|17
|1600
|0
|0
|100
|40
|500
|800 LF
|Process for PBSG top clading layer developed by Haiyan Ou from DTU Photonics
Annnealing/oxidation: Anneal bond furnace, recipe "clad1000"
|}
 
===Expected results===
{| border="1" cellspacing="0" cellpadding="5"
|-
|Recipe name
|Deposition rate [nm/min]
|Refractive index
|-
|Core-Ge
|~188 nm/min
|~1.46969
|-
|Top-BPSG
|~248 nm/min
|~1.458
|}
 
=Recipes on PECVD2 for deposition of silicon oxides <span style="color:Red">EXPIRED!!!</span>=
   
   
==Quality control recipe (recipe changed in June 2015)==
==Quality control recipe (recipe changed in June 2015)==
Line 132: Line 366:
|-
|-
|
|
*[http://labmanager.danchip.dtu.dk/d4Show.php?id=1988&mach=17 The QC procedure for PECVD2]<br>
 
*[http://labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=17 The newest QC data for PECVD2]
{| {{table}}
{| {{table}}
| align="center" |  
| align="center" |  
Line 164: Line 397:
!PECVD2
!PECVD2
|-
|-
|Depostion rate of Silicon Oxide
|Deposition rate of Silicon Oxide
|58nm/min - 78nm/min
|58 nm/min - 78nm/min
|-
|-
|Non-uniformity of the deposition rate: ''(max-min)/2*AVG''
|Non-uniformity of the deposition rate: ''(max-min)/2*AVG''
Line 173: Line 406:
|1.45 - 1.48
|1.45 - 1.48
|-
|-
|Non-uniformity of the refrative index: ''(max-min)/2*AVG''
|Non-uniformity of the refractive index: ''(max-min)/2*AVG''
|<0.2%
|<0.2%
|-
|-
Line 181: Line 414:
|}
|}


==SiO2, High Rate==
==SiO2, High Rate <span style="color:Red">EXPIRED!!!</span>==




Line 207: Line 440:
|}
|}


==SiO2 Low Rate==
==SiO2 Low Rate <span style="color:Red">EXPIRED!!!</span>==




Line 299: Line 532:
<br clear="all" />
<br clear="all" />


==BPSG: RI vs. B/P ==
==BPSG: RI vs. B/P <span style="color:Red">EXPIRED!!!</span> ==
B2H6 flow and PH3 flow was varied to map the RI of different B2H6/PH3 ratios. <br>
B2H6 flow and PH3 flow was varied to map the RI of different B2H6/PH3 ratios. <br>
''Work done by BGHE@danchip in fall 2013'' <br>
''Work done by BGHE@dtu in fall 2013'' <br>
{| border="1" cellspacing="0" cellpadding="7"
{| border="1" cellspacing="0" cellpadding="7"
|-
|-
Line 375: Line 608:
<br clear="all" />
<br clear="all" />


=Recipes on PECVD3 for deposition of silicon oxides=
=Recipes on PECVD1 for deposition of silicon oxides <span style="color:Red">EXPIRED!!!</span>=
{| border="1" cellspacing="2" cellpadding="2" colspan="3"
|bgcolor="#98FB98" |'''Quality Controle (QC) for PECVD3 - oxide'''
|-
|
*[http://labmanager.danchip.dtu.dk/d4Show.php?id=1402&mach=106 The QC procedure for PECVD3]<br>
*[http://www.labmanager.danchip.dtu.dk/view_binary.php?type=data&mach=106 The newest QC data for PECVD3]
{| {{table}}
| align="center" |
{| border="1" cellspacing="1" cellpadding="2"  align="center" style="width:200px"
 
! QC Recipe:
! QCOXYD2
|-
| SiH<sub>4</sub> flow
|12 sccm
|-
|N<sub>2</sub>O flow
|1420 sccm
|-
|N<sub>2</sub> flow
|392 sccm
 
|-
|Pressure
|700 mTorr
|-
|RF-power
|150 W
|-
|}
| align="center" valign="top"|
{| border="2" cellspacing="1" cellpadding="2" align="center" style="width:500px"
!QC limits
!PECVD3 - OXIDE
|-
|Deposition rate
|97 - 112 nm/min
|-
|Non-uniformity
|<2.0
|-
|Refractive index
|1.467 - 1.474
|-
|}
|-
|}
|}
 
===Recipes===
{| border="1" cellspacing="0" cellpadding="7"
|-
|Recipe name
|SiH4 flow [sccm]
|N<sub>2</sub>O flow [sccm]
|N2 flow [sccm]
|B2H6 flow [sccm]
|PH3 flow [sccm]
|Pressure [mTorr]
|Power [W]
|Description
|-
|LFSiO2
|12
|1420
|392
|0
|0
|700
|150
|New QC implemented in April 2016
|-
|LFSiO
|12
|1420
|392
|0
|0
|550
|60
|Uniform silicon oxide
|-
|1PBSG
|17
|1600
|0
|135
|40
|500
|800LF
|BPSG glass for waveguide cladding layer
|}
LF=Low Frequency
 
===Expected results===
{| border="1" cellspacing="0" cellpadding="5"
|-
|Recipe name
|Deposition rate [nm/min]
|RI
|Uniformity [%]
|Stress
|-
|LFSiO2
|105nm/min
|1.47
|~1.5%
|'''400-402 MPa''' compressive stress '' by Anders Simonsen @nbi.ku.dk April 2016''
|-
|LFSiO
|~75
|~1.48
|<1
|not measured
|-
|1PBSG
|~228 nm/min
|.
|~17%
|not measured
|}
<br clear="all" />
 
=Recipes on PECVD3 for deposition of doped oxide=
===Recipes===
{| border="1" cellspacing="0" cellpadding="7"
|-
|Recipe name
|SiH<sub>4</sub> flow [sccm]
|N<sub>2</sub>O flow [sccm]
|N<sub>2</sub> flow [sccm]
|GeH<sub>4</sub> flow [sccm] (scaled by 100)
|B<sub>2</sub>H<sub>6</sub> flow [sccm]
|PH<sub>3</sub> flow [sccm]
|Pressure [mTorr]
|Power [W]
|Description
|-
|Core-Ge
|17
|1600
|300
|300
|0
|0
|400
|600 LF
|Process for germanium doped core layer developed by Haiyan Ou from DTU Photonics
Annnealing: Anneal bond furnace, recipe "core1100"
|-
|Top-BPSG
|17
|1600
|0
|0
|100
|40
|500
|800 LF
|Process for PBSG top clading layer developed by Haiyan Ou from DTU Photonics
Annnealing/oxidation: Anneal bond furnace, recipe "clad1000"
|}
 
===Expected results===
{| border="1" cellspacing="0" cellpadding="5"
|-
|Recipe name
|Deposition rate [nm/min]
|Refractive index
|-
|Core-Ge
|~188 nm/min
|~1.46969
|-
|Top-BPSG
|~248 nm/min
|~1.458
|}
 
 
=Recipes on PECVD1 for deposition of silicon oxides <span style="color:Red">Expired!</span>=
===Recipes===
===Recipes===
{| border="1" cellspacing="0" cellpadding="7"
{| border="1" cellspacing="0" cellpadding="7"
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