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LabAdviser/Technology Research/Fabrication of Hyperbolic Metamaterials using Atomic Layer Deposition/EMT Procces flow: Difference between revisions

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'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/LabAdviser/Technology_Research/Fabrication_of_Hyperbolic_Metamaterials_using_Atomic_Layer_Deposition/EMT_Procces_flow click here]'''
<i>This page is written by <b>Evgeniy Shkondin @DTU Nanolab</b> if nothing else is stated. <br>
All images and photos on this page belongs to <b>DTU Nanolab</b> and <b>DTU Electro</b> (previous DTU Fotonik).<br></i>
=Fabrication of Hyperbolic Metamaterials by ALD: Aluminum Oxide/Titanium Oxide Multilayers for EMT Application=
The fabrication and characterization described below were conducted in <b>2013-2016 by Evgeniy Shkondin, DTU Nanolab</b>.<br>
====Procces flow description====
====Procces flow description====


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== Process flow ==
== Process flow ==
Hej Evgeniy <br>
Jeg har lagt dette eksemple på et process flow ind. Alt tekst og billeder skal selvfølgelig erstattes af relevante process steps for denne artikel.


Mvh. Berit
Description of process flow.


{| border="1" cellspacing="1" cellpadding="3" style="text-align: left; width: 925px; height: 220px;"
{| border="1" cellspacing="1" cellpadding="3" style="text-align: left; width: 925px; height: 220px;"
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|-
|-
!2.1
!1.1
|Plasma surface treatment
|Plasma surface treatment
|To ensure clean surface, the 100 mm Si wafer is treated by O<sub>2</sub>/N<sub>2</sub> plasma.
|To ensure clean surface, the 100 mm Si wafer is treated by O<sub>2</sub>/N<sub>2</sub> plasma.
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|-
|-
|- style="background:#BCD4E6; color:black"
|- style="background:#BCD4E6; color:black"
!2.2
!1.2
|Deposition of 1 µm Si<sub>3</sub>N<sub>4</sub> layer
|Deposition of 1 µm Si<sub>3</sub>N<sub>4</sub> layer
|Deposition carries 7 times in order to get 1 µm thick film
|Deposition carries 7 times in order to get 1 µm thick film
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|-
|-
!2.3
!1.3
|Surface investigation using optical microscopy in dark field mode
|Surface investigation using optical microscopy in dark field mode
|The best quility wafer selects and cleaves in four pieces.  
|The best quility wafer selects and cleaves in four pieces.  
| [[Specific_Process_Knowledge/Characterization/Optical_microscope|Optical Microscopy]].
| [[Specific_Process_Knowledge/Characterization/Optical_microscope|Optical Microscopy]].
|[[image:3_Captured_10x19_defects_in_SiN.jpg|250x350px|center|]]
|[[image:Captured_10x19_defects_in_SiN.jpg|250x350px|center|]]
|-
|-


|-
|-
|- style="background:#BCD4E6; color:black"
|- style="background:#BCD4E6; color:black"
!2.4
!1.4
|TiO<sub>2</sub>/Al<sub>3</sub>O<sub>3</sub> multilayers deposition using Atomic Layer Deposition
|TiO<sub>2</sub>/Al<sub>3</sub>O<sub>3</sub> multilayers deposition using Atomic Layer Deposition
|Deposition using recipies <b>EMA01</b>, <b>EMA02</b>, <b>EMA03</b> and <b>EMA04</b>.
|Deposition using recipies <b>EMA01</b>, <b>EMA02</b>, <b>EMA03</b> and <b>EMA04</b>.
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|-
|-
!2.5
!1.5
|Scanning Electron Microscopy inspection  
|Scanning Electron Microscopy inspection  
|By cleaving the sample it is possible to inspect depositet ALD layers uniformity in cross-sectional mode
|By cleaving the sample it is possible to inspect depositet ALD layers uniformity in cross-sectional mode
|[[Specific_Process_Knowledge/Characterization/SEM_Supra_2|SEM Supra 2]]  
|
[[Specific_Process_Knowledge/Characterization/SEM_Supra_1|SEM Supra 1]]
<br clear="all" />
[[Specific_Process_Knowledge/Characterization/SEM_Supra_2|SEM Supra 2]]
<br clear="all" />
[[Specific_Process_Knowledge/Characterization/SEM_Supra_3|SEM Supra 3]]
|[[image:multilayers222.jpg|250x350px|center]]
|[[image:multilayers222.jpg|250x350px|center]]
|-
|-
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|-
|-
|- style="background:#BCD4E6; color:black"
|- style="background:#BCD4E6; color:black"
!2.6
!1.6
|XPS inspection for elemental trace analysis
|XPS inspection for elemental trace analysis
|XPS can be used in depth profile mode. Ar<sup>+</sup> ions erodes the surface of multilayers, allowing the inspection of each layer.
|XPS can be used in depth profile mode. Ar<sup>+</sup> ions erodes the surface of multilayers, allowing the inspection of each layer.
||Equipment used: [[Specific_Process_Knowledge/Characterization/XPS#XPS-ThermoScientific|XPS-ThermoScientific]]. Results of depth profiling presented: [[Specific_Process_Knowledge/Thin_film_deposition/ALD_Picosun_R200/ALD_multilayers#Investigation_of_chemical_composition_in_multilayers_system| XPS results]] .
||Equipment used: [[Specific_Process_Knowledge/Characterization/XPS/K-Alpha|XPS K-Alpha]]. Results of depth profiling presented: [[Specific_Process_Knowledge/Thin_film_deposition/ALD_Picosun_R200/ALD_multilayers#Investigation_of_chemical_composition_in_multilayers_system| XPS results]] .
  |[[image:XPS_depth_Al_10_AL.jpg|250x350px|center]]
  |[[image:XPS_depth_Al_10_AL.jpg|250x350px|center]]
|-
|-
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