Specific Process Knowledge/Lithography: Difference between revisions

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'''<big>[[Specific_Process_Knowledge/Lithography/UVLithography#Resist_Overview|UV resists]]</big>'''
*[[Specific_Process_Knowledge/Lithography/5214E|AZ 5214E]]
*[[Specific_Process_Knowledge/Lithography/4562|AZ 4562]]
*[[Specific_Process_Knowledge/Lithography/MiR|AZ MiR 701 (29cps)]]
*[[Specific_Process_Knowledge/Lithography/nLOF|Az nLOF 2020]]
*[[Specific_Process_Knowledge/Lithography/SU-8|SU-8]]
'''<big>[[Specific Process Knowledge/Lithography/Pretreatment|Pretreatment]]</big>'''
'''<big>[[Specific Process Knowledge/Lithography/Pretreatment|Pretreatment]]</big>'''
*[[Specific Process Knowledge/Lithography/Pretreatment#HMDS|HMDS]]
*[[Specific Process Knowledge/Lithography/Pretreatment#HMDS|HMDS]]
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*[[Specific Process Knowledge/Lithography/DUVStepperLithography#SÜSS Spinner-Stepper|Spin coater: Süss Stepper]]
*[[Specific Process Knowledge/Lithography/DUVStepperLithography#SÜSS Spinner-Stepper|Spin coater: Süss Stepper]]


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'''<big>[[Specific Process Knowledge/Lithography/Baking|Baking]]</big>'''
'''<big>[[Specific Process Knowledge/Lithography/Baking|Baking]]</big>'''
*[[Specific Process Knowledge/Lithography/Baking#Hotplates|Hotplates]]
*[[Specific Process Knowledge/Lithography/Baking#Hotplates|Hotplates]]
*[[Specific Process Knowledge/Lithography/Baking#Ovens|Ovens]]
*[[Specific Process Knowledge/Lithography/Baking#Ovens|Ovens]]


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'''<big>[[Specific Process Knowledge/Lithography/UVExposure|UV Exposure]]</big>'''
'''<big>[[Specific Process Knowledge/Lithography/UVExposure|UV Exposure]]</big>'''
*[[Specific Process Knowledge/Lithography/UVExposure#KS Aligner|KS Aligner]]
*[[Specific Process Knowledge/Lithography/UVExposure#KS Aligner|KS Aligner]]
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*[[Specific_Process_Knowledge/Lithography/EBeamLithography/JEOL_JBX-9500FSZ|E-Beam Writer 9500 (JEOL JBX-9500FSZ)]]
*[[Specific_Process_Knowledge/Lithography/EBeamLithography/JEOL_JBX-9500FSZ|E-Beam Writer 9500 (JEOL JBX-9500FSZ)]]
*[[Specific_Process_Knowledge/Lithography/EBeamLithography/RaithElphy|Raith Elphy on SEM - LEO]]
*[[Specific_Process_Knowledge/Lithography/EBeamLithography/RaithElphy|Raith Elphy on SEM - LEO]]
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'''<big>[[Specific Process Knowledge/Lithography/Development|Development]]</big>'''
'''<big>[[Specific Process Knowledge/Lithography/Development|Development]]</big>'''
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*[[Specific_Process_Knowledge/Lithography/DUVStepperLithography#Developer_TMAH_Stepper|Developer: TMAH Stepper]]
*[[Specific_Process_Knowledge/Lithography/DUVStepperLithography#Developer_TMAH_Stepper|Developer: TMAH Stepper]]


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'''<big>[[Specific Process Knowledge/Lithography/Descum|Descum]]</big>'''
'''<big>[[Specific Process Knowledge/Lithography/Descum|Descum]]</big>'''
*[[Specific Process Knowledge/Lithography/Strip#Plasma_asher|Plasma Asher 1]]
*[[Specific Process Knowledge/Lithography/Strip#Plasma_asher|Plasma Asher 1]]

Revision as of 16:54, 19 December 2019


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Comparing lithography methods at DTU Nanolab

UV Lithography DUV Stepper Lithography E-beam Lithography Nano Imprint Lithography
Generel description Pattern transfer via UltraViolet (UV) light Pattern transfer via Deep UltraViolet (DUV) light Patterning by electron beam Pattern transfer via hot embossing (HE)
Pattern size range
  • Resist type, thickness, and pattern dependent
  • ~1.25 µm and up
  • pattern type, shape and pitch dependent
  • ~200 nm and up
  • ~12 nm - 1 µm
  • ~20 nm and up
Resist type
  • UV sensitive:
    • AZ 5214E, AZ 4562, AZ MiR 701 (positive)
    • AZ 5214E, AZ nLOF 2020, SU-8 (negative)
  • DUV sensitive
    • JSR KRF M230Y, JSR KRF M35G (positive)
    • UVN2300-0.8 (negative)
  • E-beam sensitive
    • AR-P6200 CSAR, ZEP502A , PMMA, HSQ, mr-EBL, AR-N 7520
  • Imprint polymers:
    • Topas
    • PMMA
Resist thickness range

~0.5µm to 20µm

~50nm to 2µm

~30nm to 0.5 µm

~ 100nm to 2µm

Typical exposure time

2s-30s pr. wafer

Process depended, depends on pattern, pattern area and dose

Depends on dose, Q [µC/cm2], beam current, I [A], and pattern area, A [cm2]: t = Q*A/I

Process depended, depends also on heating and cooling temperature rates

Substrate size
  • small samples
  • 50 mm wafers
  • 100 mm wafers
  • 150 mm wafers
  • 100 mm wafers
  • 150 mm wafers
  • 200 mm wafers

We have cassettes that fit to

  • 4 small samples (20mm, 12mm, 8mm, 4mm)
  • 6 wafers of 50 mm in size
  • 3 wafers of 100 mm in size
  • 1 wafer of 150 mm in size
  • 1 wafer of 200 mm in size

Only one cassette can be loaded at a time

  • small samples
  • 50 mm wafers
  • 100 mm wafers
  • 150 mm wafers
Allowed materials
  • Any standard cleanroom material
  • Any standard cleanroom material
  • Any standard cleanroom material, except materials that will degas and special treatment for graphene
  • Any standard cleanroom material


Equipment Pages

Pretreatment

Coating

Baking

UV Exposure

Deep-UV Exposure

Electron Beam Exposure

Development

Descum

Lift-off

Strip

NanoImprint Lithography


Lithography Tool Package Training

DTU Nanolab offers a Tool Package Training in Lithography; the course includes theory on lithographic processes and equipment, as well as training in equipment operation and processing in the cleanroom.

The course is for all users that intend to perform any kind of lithographic processing in the cleanroom, and is a prerequisite for training in other lithography equipment.


For details, dates, and course material, please check the course description under Courses.


Lithography Tool Package Training
Schedule

Theoretical part

  • Lecture videos that can be viewed at one's leisure.
  • A 1 hour "questions and exercises" session 2 times a month (typically Fridays 09:30-10:30).

Practical part

  • A 3-4 hour training session 2 times a month, max. 4 persons per session (typically Wednesdays 09:00 - 12:30 or 10:00 - 13:30).
Location

Theoretical part

  • The location of the "questions and exercises" session is room 121A in building 345C.

Practical part

  • The training session takes place inside the cleanroom. The meeting point will be in front of the first equipment.
Qualified Prerequisites
  • Cleanroom safety course at DTU Nanolab
  • Admission to the cleanroom must be obtained before the training session
  • Theoretical part must be completed before the training session
Preparations

Before the "questions and exercises" session

  • Read Sami Franssila "Introduction to Microfabrication" (2010), Chapter 9: Optical Lithography. (Available online from DTU campus)
  • Watch the lecture videos (7 videos, 2:41 hours in total). Write down any questions that may arise during the videos.

Before training session

  • Complete the theoretical part (Q&E)
  • Watch the training videos of spin coating (automatic), exposure (operation, and alignment), and development (automatic).
  • Study the equipment manuals. The manuals are available in LabManager.
  • Study the TPT process flows (first print, and alignment).
Course Responsible

The Lithography Group at DTU Nanolab lithography@nanolab.dtu.dk.

Learning Objectives
  • Describe fundamental parts of lithographic processing in a cleanroom, design of process flows
  • Authorization to use spin coater, mask aligner, and developer at DTU Nanolab
  • Calculate relevant process parameters
  • Analyze and apply your results of lithographic processing



Knowledge and Information about Lithography

Literature


Lecture videos

  • Lithography TPT lecture videos (7 videos, 2:41 hours in total) on DTU Podcasts or YouTube
  • A full lecture series from a UT Austin course on microfabrication by "litho guru" Chris Mack. Half of the lectures are on (projection) lithography :-)


Lithography TPT lecture slides

Training videos

Playlist on YouTube:


Manuals

Process Flows

Resists


UV Exposure


Electron Beam Exposure


Deep-UV Exposure