Specific Process Knowledge/Lithography: Difference between revisions
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'''<big>[[Specific Process Knowledge/Lithography/Descum|Descum]]</big>''' | '''<big>[[Specific Process Knowledge/Lithography/Descum|Descum]]</big>''' | ||
*[[Specific Process Knowledge/Lithography/ | *[[Specific Process Knowledge/Lithography/Strip#Plasma Asher 1|Plasma Asher 1]] | ||
*[[Specific Process Knowledge/Lithography/Strip#Plasma Asher 2|Plasma Asher 2]] | |||
*[[Specific_Process_Knowledge/Etch/Wet_Silicon_Oxide_Etch_(BHF)|BHF]] | |||
'''<big>[[Specific Process Knowledge/Lithography/LiftOff|Lift-off]]</big>''' | '''<big>[[Specific Process Knowledge/Lithography/LiftOff|Lift-off]]</big>''' | ||
*[[Specific Process Knowledge/Lithography/LiftOff# | *[[Specific Process Knowledge/Lithography/LiftOff#Lift-off_wet_bench_07|Lift-off]] | ||
'''<big>[[Specific Process Knowledge/Lithography/Strip|Strip]]</big>''' | '''<big>[[Specific Process Knowledge/Lithography/Strip|Strip]]</big>''' | ||
*[[Specific Process Knowledge/Lithography/Strip#Plasma Asher 1|Plasma Asher 1]] | *[[Specific Process Knowledge/Lithography/Strip#Plasma Asher 1|Plasma Asher 1]] | ||
*[[Specific Process Knowledge/Lithography/Strip#Plasma Asher 2|Plasma Asher 2]] | *[[Specific Process Knowledge/Lithography/Strip#Plasma Asher 2|Plasma Asher 2]] | ||
*[[Specific Process Knowledge/Lithography/Strip#Rough Acetone Strip|Resist Strip]] | *[[Specific Process Knowledge/Lithography/Strip#Rough Acetone Strip|Resist Strip]] | ||
Revision as of 15:23, 26 August 2019
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Comparing lithography methods at DTU Danchip
UV Lithography | DUV Stepper Lithography | E-beam Lithography | Nano Imprint Lithography | |
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Generel description | Pattern transfer via UltraViolet (UV) light | Pattern transfer via DeepUltraViolet (DUV) light | Patterning by electron beam | Pattern transfer via hot embossing (HE) |
Pattern size range |
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Resist type |
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Resist thickness range |
~0.5µm to 20µm |
~50nm to 2µm |
~30nm to 0.5 µm |
~ 100nm to 2µm |
Typical exposure time |
2s-30s pr. wafer |
Process depended, depends on pattern, pattern area and dose |
Depends on dose, Q [µC/cm2], beam current, I [A], and pattern area, A [cm2]: t = Q*A/I |
Process depended, depends also on heating and cooling temperature rates |
Substrate size |
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We have cassettes that fit to
Only one cassette can be loaded at a time |
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Allowed materials |
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Equipment Pages
Lithography Tool Package Training
DTU Danchip offers a Tool Package Training in Lithography; the course includes theory on lithographic processes and equipment, as well as training in equipment operation and processing in the cleanroom.
The course is for all users that intend to perform any kind of lithographic processing in the cleanroom, and is a prerequisite for training in other lithography equipment.
For details, dates, and course material, please check the course description under Courses.
Lithography Tool Package Training | |
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Schedule |
Theoretical part
Practical part
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Location |
Theoretical part
Practical part
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Qualified Prerequisites |
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Preparations |
Before the "questions and exercises" session
Before training session
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Course Responsible |
The Lithography Group at DTU Nanolab lithography@danchip.dtu.dk. |
Learning Objectives |
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Knowledge and Information about Lithography