Specific Process Knowledge/Thin film deposition/Si sputter in Wordentec
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The Wordentec has been decomissioned in 2025. These results are kept for reference.
Silicon sputtering in the Wordentec
Silicon can be sputter deposited in the Wordentec as well as in the Sputter-System(Lesker) (details on sputtering Si in the Sputter-System Lesker here) and in the new Cluster Lesker (results here and here).
Parameters
Listed below are tried parameters, that can be used during Si deposition in the Wordentec. The process parameters in the table below can be used as started values, run a test process to be sure that you get the right thickness.
Do not use the power more than 180 W without consulting staff, since the Si target could break into a lot of small pieces.
| Settings 1 | Settings 2 | |
|---|---|---|
| Process type | Sputtering | Sputtering |
| Power | 130W | 170W |
| Sputter pressure | 5*10-3 mbar | 1*10-2 mbar |
| Rate | About 0.7 Å/s | About 0.6 Å/s |