Specific Process Knowledge/Thin film deposition/Gadolinium Cerium Oxide

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Deposition of Gadolinium Cerium Oxide

Thin films of Gadolinium Cerium Oxide (Gd0.2Ce0.8O2) can be deposited using RF sputtering. In this process, the main parameters are temperature and additional oxygen, which can be adjusted to tailor the properties of the deposited films. The target is a solid ceramic 75 mm (0.125" thickness) GCO target bonded to a Cu plate.


GCO sputtering in Sputter-System Metal-Oxide (PC1)

Sputter-System Metal-Oxide (PC1)/Sputter-System Metal-Nitride (PC3)
Generel description
  • RF sputtering
  • R-RF sputtering
Stoichiometry
  • Gd0.2Ce0.8O2 (can be tuned)
Film Thickness
  • few nm - ? (hundreds of nm)
Deposition rate
  • 0.015-0.025 nm/s
Step coverage
  • Not investigated
Process Temperature
  • Up to 600 °C (most likely in the range of 200°C)
Substrate size
  • Several small samples
  • 100 mm wafer
  • 150 mm wafer
Allowed materials
  • Silicon
  • Silicon oxide, silicon nitride
  • Quartz/fused silica
  • Metals
  • III-V materials (use dedicated carrier wafer)
  • Almost anything that is not toxic
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