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Specific Process Knowledge/Thin film deposition/Deposition of Tungsten/Evaporation of W in Temescal

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This page is written by Evgeniy Shkondin @DTU Nanolab with a small addition in the beginning by Rebecca Ettlinger.
All images and photos on this page belongs to DTU Nanolab.
The fabrication and characterization described below were conducted in 2022 by Evgeniy Shkondin, DTU Nanolab.

Deposition of W in Temescal

This page describes deposition of W in Temescal.

During the e-beam deposition of Tungsten, extremely bright light and heat are generated! Lower density film than expected due to porosity. Consider using sputtering instead.

Because of heating during e-beam evaporation the chamber "bakes out" and the pressure rises. For this reason, at least during some processes in the Temescal we stopped the deposition every 20 nm to let the pressure drop. Also, the rate needs to be low, to avoid overheating. Talk to staff when you want to deposit W (write to thinfilm@nanolab.dtu.dk).

Power 33W, stable rate, tooling 86%. Measured thickness 20 nm (XRR).

Wait for base pressure 3 10-7Torr before start.


Deposition of Tungsten. Dep. rate: 0.5Å/s, Thickness sp.: 20nm
Tooling factor 86% 2022-02-25
Layer name Thickness (nm) Density (g/cm3) Rougness (nm) Delta Beta
Moisture 0.80 0.52 0.52 1.7906e-6 4.1579e-8
WOx

1.01

5.00 0.72 1.6991e-5 3.9456e-7
W

19.12

15.66 0.81 3.7045e-5 2.9324e-6
SiO2 (native oxide) 2.09 2.15 0.32 7.0136e-6 1.6287e-7
Si (wafer) 2.33 0.00 7.5860e-6 1.7616e-7