Specific Process Knowledge/Thermal Process/C2 Furnace General Purpose Annealing

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General Purpose Annealing furnace (C2)

The General Purpose Annealing furnace (C2) is a Tempress horizontal furnace located in the furnace C stack.

The furnace has from September 2024 become a general purpose annealing furnace. It means that it can be used for annealing of different samples and different materials, such as silicon substrates with metal layers.

Annealings can be performed in a nitrogen atmosphere, with an nitrogen flow up to 10 SLM.

An annealing temperature of maximum 600 C is allowed in the furnace, with a ramp rate of up to 10°C/min. The standby temperature is set to 250°C.

Samples must be able to tolerate the annealing temperature. A permission from the Thin Film group is also required, before samples are annealed in the furnace.

Please also check the cross contamination information in LabManager, before you use the furnace. And note that samples that have been annealed in the furnace are considered "dirty" or "contaminated with metal traces" and are therefore not allowed in any other furnaces afterwards.

4" wafers can be placed horizontally in a quartz boat in the furnace, and up to two 6" wafer can be placed horizontally on two boats. Small sample are placed on a 6" carrier wafer (with or without a recess) on a quartz boat.

The motor for automatic opening and closing of furnace door is broken, and the door therefore has to be opened and closed manually.

The user manual and contact information can be found in LabManager:

General Purpose Annealing furnace (C2)

Overview of the performance of the General Purpose Annealing furnace and some process related parameters

Purpose		Annealing of different samples and sample materials
Process parameter range	Annnealing temperature	Up to 600 oC, temperature ramp rate up to 10 oC/s
	Standby temperature	250 oC/s (minimum sample loading temperature)
	Process pressure	1 atm
	Gases on the system	N2, max flow 10 SLM
Substrates	Batch size	Up to 30 4" wafers 1-2 6" wafers (placed horizontally on the boats) Several smaller samples (placed horizontally on a 6" carrier wafer placed on the boat)
	Substrate materials allowed	Most materials, but samples must be able to tolerate the annealing temperature, and a permission from the Thin Film group is required