Specific Process Knowledge/Lithography/Development

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Development Comparison Table

Equipment		Developer: SU8 (Wet bench)	Developer: E-beam 02	Developer: TMAH Manual 02	Developer: TMAH UV-lithography	Developer: TMAH Stepper
Purpose		Development of: SU-8	Development of: ZEP 520A AR-P 6200.xx (CSAR)	Development of: AZ nLOF AZ MiR 701 AZ 5214E AZ 4562 DUV resists	Development of: AZ nLOF AZ MiR 701 AZ 5214E AZ 4562 DUV resists Post-exposure baking	Development of: DUV resists Post-exposure baking
Developer		mr-Dev 600 (PGMEA)	ZED N-50 AR-600-546	AZ 726 MIF (2.38% TMAH in water)	AZ 726 MIF (2.38% TMAH in water)	AZ 726 MIF (2.38% TMAH in water)
Method	Development	Submersion	Spray/Puddle	Puddle	Puddle	Puddle
Method	Handling	Single wafer carrier Chip bucket 100 mm carrier for up to 6 wafers	Vacuum chuck for 100 mm & 150 mm substrates Chip chuck for chips & 2" substrates	Vacuum chuck for 100 mm & 150 mm substrates Chip chuck for chips & 2" substrates	Vacuum chuck	Vacuum chuck
Process parameters	Temperature	Room temperature	Room temperature	Room temperature	Room temperature	Room temperature
	Agitation	Magnetic stirrer	Rotation	Rotation	Rotation	Rotation
	Rinse	IPA	IPA	DI water	DI water	DI water
Substrates	Substrate size	Chips 50 mm wafers 100 mm wafers 150 mm wafers 200 mm wafers	Chips (5mm to 2") 50 mm wafers 100 mm wafers 150 mm wafers	Chips (5mm to 2") 100 mm wafers 150 mm wafers	100 mm wafers 150 mm wafers 200 mm wafers (may require tool change)	100 mm wafers 150 mm wafers 200 mm wafers (may require tool change)
	Allowed materials	Silicon and glass substrates Film or pattern of all but Type IV	All cleanroom approved materials	All cleanroom approved materials Film or pattern of all types	Silicon and glass substrates Film or pattern of all but Type IV	Silicon, III-V, and glass substrates Film or pattern of all but Type IV
	Batch	1 - 6	1	1	1 - 25	1 - 25

Developer: SU8 (Wet Bench)

The SU8-Developer bench is a manually operated wet bench for submersion development of SU-8 photoresist in PGMEA (supplied in the cleanroom as mr-Dev 600). The development process is in two stages; one bath (FIRST) to dissolve the bulk of the resist, and a second, cleaner bath (FINAL) to finish the development. The development time is controlled manually by the user. After development, the substrates are rinsed with IPA in dedicated IPA bath and put for drying in the empty bath.

The user manual, user APV, and contact information can be found in LabManager: Developer: SU8(Wet Bench) - requires login

Process information

Several aspects of the outcome of SU-8 processing are affected by the development process. The lithographic resolution is affected by the time between PEB (post-exposure bake) and development, as the cross-linking process continues in the interface between exposed and unexposed regions even at room temperature. Cracks in the structures is affected by two things; the development time, and how much has previously been developed in the developer bath. Cracking is worse with longer development time, and worst in a new developer bath. The effect of the developer use quickly saturates (5-10 wafers). Finally, the stability of fine structures (high aspect ratio) is affected by the rinse after development, as the lower surface tension of IPA compared to PGMEA reduces pattern collapse during drying.

Development time is strongly dependent on the SU-8 thickness.

Minimum development time: 1 min per 20 µm in FIRST

Suggestions:

2-5µm: 2 min. in FIRST; 2 min. in FINAL
40µm: 5 min. in FIRST; 5 min. in FINAL (however, 3 min. in FIRST and 2 min. in FINAL is sufficient)
180-250µm: 15 min. in FIRST; 15 min. in FINAL

Equipment performance and process related parameters

Purpose		Development of: SU-8
Developer		mr-Dev 600 (PGMEA)
Method	Development	Submersion
Method	Handling	Single wafer holder
Process parameters	Temperature	Room temperature
	Agitation	Magnetic stirrer
	Rinse	IPA
Substrates	Substrate size	100 mm wafers 150 mm wafers, check the liquid level in the baths 200 mm wafer, check the liquid level in the baths
	Allowed materials	Silicon and glass substrates Film, or pattern, of all materials except Type IV
	Batch	1-6

Developer: E-beam 02

Developer: E-beam 02 is a manually operated, single substrate puddle developer. It uses the ZED-N50 or AR 600-50 developers and IPA for rinsing. The substrates are loaded manually one by one into the developer. Developer dispense, puddle time, IPA rinse, and drying is then performed automatically by the equipment.

Training video (for Developer: TMAH Manual, but it is the same model)

The user manual, user APV, and contact information can be found in LabManager - requires login

Process information

All recipes use the following structure:

Pressurize the developer canister
Dispense puddle while rotating substrate slowly
Puddle development while not rotating
Agitate substrate once per 15 seconds by rotating slowly for 1 second
Spin off developer
Clean substrate with IPA
Dry substrate and chamber with nitrogen

Multi-puddle recipes repeat steps 2-5 for the given number of puddles.

Process recipes
N50 recipes have the letter "N" in them. AR-600-50 recipes have the letter "A" in them. The number is the development time in seconds:

01 Rinse
02 N 15
03 N 30
04 N 60
05 N 90
06 N 120
07 N 180
08 N 300
09 N 600
10 N 2x60
11 N 5x60
12 A 15
13 A 30
14 A 60
15 A 90
16 A 120
17 A 180
18 A 300
19 A 600
20 A 2x60
21 A 5x60

Equipment performance and process related parameters

Purpose		Development of: CSAR ZEP520A
Developer		AR 600-50 ZED N-50
Method	Development	Puddle
Method	Handling	Chip chuck for chips Non-vacuum chuck for 2" wafers Non-vacuum chuck for 100 mm and 150 mm wafers Non-vacuum chuck for 200 mm wafers
Process parameters	Temperature	Room temperature
	Agitation	1 second rotational agitation at 30 rpm every 15 seconds
	Rinse	IPA
Substrates	Substrate size	Chips 2" wafers 100 mm wafers 150 mm wafers 200 mm wafers
	Allowed materials	All cleanroom approved materials Film, or pattern, of all materials except Type IV
	Batch size	1

Developer: TMAH Manual 02

Developer: TMAH Manual 02 is a manually operated, single substrate or chip puddle developer. It uses the TMAH based AZ 726 MIF developer (2.38 % TMAH in water with a small amount of wetting agent). The substrates or chips are loaded manually one by one into the developer. Developer dispense, puddle time, water rinse, and drying is performed automatically by the equipment.

Training video

The user manual, user APV, and contact information can be found in LabManager - requires login

Process information

All recipes use the following structure:

Pressurize the TMAH canister
Dispense puddle while rotating substrate slowly
Puddle development while not rotating
Agitate substrate once per 15 seconds by rotating slowly for 1 second
Spin off developer
Clean substrate and chamber with DI water
Dry substrate and chamber with nitrogen

Multi-puddle recipes repeat steps 2-5 for the given number of puddles.

Process recipes
SP: Single-puddle
MP: Multi-puddle

01 Rinse
02 SP 15
03 SP 30
04 SP 60
05 SP 90
06 SP 120
07 SP 300
08 MP 2x60
09 MP 5x60
91 SP test
92 MP test

Equipment performance and process related parameters

Purpose		Development of UV resists: AZ nLOF AZ MiR 701 AZ 5214E AZ 4562 Development of DUV resists: KRF M230Y KRF M35G
Developer		AZ 726 MIF (2.38% TMAH in water)
Method	Development	Puddle
Method	Handling	Chip chuck for chips and 2" wafers Non-vacuum chuck for 100 mm and 150 mm wafers
Process parameters	Temperature	Room temperature
	Agitation	1 second rotational agitation at 30 rpm every 15 seconds
	Rinse	DI water
Substrates	Substrate size	Chips (6-60 mm) 100 mm wafers 150 mm wafers
	Allowed materials	All cleanroom approved materials Film, or pattern, of all materials except Type IV
	Batch size	1

Developer TMAH UV-lithography

Developer TMAH UV-lithography was released Q4 2014.

Training video

The user manual, user APV, and contact information can be found in LabManager - requires login

Process Information

Equipment performance and process related parameters

Purpose		Development of AZ nLOF AZ MiR 701 AZ 5214E AZ 4562 DUV resists
Developer		AZ 726 MIF (2.38% TMAH in water)
Method	Development	Puddle
Method	Handling	Vacuum chuck
Process parameters	Temperature	Room temperature
	Agitation	Rotation
	Rinse	DI water
Substrates	Substrate size	100 mm wafers 150 mm wafers
	Allowed materials	Silicon and glass substrates Film or pattern of all except Type IV
	Batch	1-25

Developer: TMAH Stepper

This developer is dedicated for development of DUV resists. The developer is fully automatic and can run up to 25 substrates in a batch 4", 6", and 8" size (8" requires tool change). The machine is equipped with 1 developer line, in our case 2,38% TMAH in water (AZ 726 MIF), 1 topside rinse line with water, 1 backside rinse line with water and 1 N2 line for drying.

The user manual and contact information can be found in LabManager - requires login

Process information

The development process will be performed by the customer together with the Photolith group of DTU Nanolab. In case you would like to do DUV lithography please contact Lithography team, who will consult you and run your wafers together with you.

Here you can find a chart‎ demonstrating a dependence between 250 nm line width/pillars diameter and exposure dose.

Standard processes

Post-exposure bake sequences:

(1000) DCH PEB 130C 60s 60s baking at 130°C; 20s cooling
(1001) DCH PEB 130C 90s 90s baking at 130°C; 20s cooling

Development sequences:

(1004) DCH DEV 60s 60s single puddle development

Combined PEB and development sequences:

(1002) DCH PEB_60s and DEV_60s 60s baking at 130°C followed by 60s single puddle development
(1003) DCH PEB_90s and DEV_60s 90s baking at 130°C followed by 60s single puddle development

The standard developer process consists of:

pre-wetting with water (2.5s @ 1000rpm)
developer dispense (2.5s @ 40rpm, corresponding to ~9ml)
development (60s @ 0rpm)
water rinse with BSR (5s @ 3000rpm)
nitrogen drying (7s @ 4000rpm)

and has a cycle time of ~2 minutes

Equipment performance and process related parameters

Purpose		Development of DUV resist: KRF M230Y and KRF M35G
Developer		2,38% water based TMAH
Process parameters	Spin speed	10 - 5000 rpm
	Spin acceleration	100 - 10000 rpm/s
	Hotplate temperature	130°C for post exposure baking
Substrates	Substrate size	100 mm wafers 150 mm wafers 200 mm wafers (requires tool change)
	Allowed materials	Any standard cleanroom material
	Batch	1 - 25