Plasma Asher 3: Descum

Product name: Diener Pico Plasma Asher
Year of purchase: 2014

The user manual(s), quality control procedure(s) and results and contact information can be found in LabManager - requires login

Plasma Asher 3 is specifically used for controlled descum process after lithography. Please note that you only can process a single 100 mm wafer, or one small sample, at a time. The plasma asher is equipped with 2 gaslines: oxygen and nitrogen, but all standard processes use only oxygen (as recommended by Diener).

Process parameters
You can manipulate two different descum process development parameters: you can either change power or chamber pressure.

Power testing - AZ MiR 701

Descum results for different power settings

Recipe settings:

Resist: AZ MiR 701
O2 flow: 5 sccm
N2 flow: 0
Pressure: 0.2 mbar
Power: Varied

Experiment parameters
	Forward/reverse	C2/C1	Power
recipe 1	50/0	52/31	50%
recipe 2	100/0	53/31	100%
recipe 3	20/0	51/34	20%

Pressure testing - AZ MiR 701

Descum results for different pressure settings

Recipe settings:

Resist: AZ MiR 701
O2 flow: varied
N2 flow: 0
Pressure: varied
Power: V100% (100 W)

Experiment parameters
	Forward/reverse	C2/C1	Oxygen	Pressure
recipe 1	100/0	52/31	5	0.2
recipe 2	100/0	37/38	45	0.8

Pressure testing - AZ 5214E

Descum results for different pressure settings

Recipe settings:

Resist: AZ 5214E
O2 flow: varied
N2 flow: 0
Pressure: varied
Power: V100% (100 W)

Experiment parameters
	Forward/reverse	C2/C1	Oxygen	Pressure
recipe 1	100/0	52/31	17	0.4
recipe 2	100/0	37/39	45	0.8